MM3Z27VST3 [ONSEMI]
26.86V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, CASE 477-02, 2 PIN;
| 型号： | MM3Z27VST3 |
| 厂家： | 
ONSEMI |
| 描述： | 26.86V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, CASE 477-02, 2 PIN |
| 文件： | 总4页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MM3Z3V3ST1 SERIES
Zener Voltage Regulators
200 mW SOD−323 Surface Mount
Tight Tolerance Portfolio
This series of Zener diodes is packaged in a SOD−323 surface
mount package that has a power dissipation of 200 mW. They are
designed to provide voltage regulation protection and are especially
attractive in situations where space is at a premium. They are well
suited for applications such as cellular phones, hand−held portables,
and high density PC boards.
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1
2
Cathode
Anode
MARKING
DIAGRAM
Specification Features:
• Standard Zener Breakdown Voltage Range −
3.3 V to 36 V
• Steady State Power Rating of 200 mW
2
XXMG
1
G
• Small Body Outline Dimensions:
0.067″ x 0.049″ (1.7 mm x 1.25 mm)
• Low Body Height: 0.035″ (0.9 mm)
SOD−323
CASE 477
STYLE 1
XX= Specific Device Code
M = Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary
depending upon manufacturing location.
• Package Weight: 4.507 mg/unit
• ESD Rating of Class 3 (>16 kV) per Human Body Model
G
• Tight Tolerance V
Z
• Pb−Free Packages are Available
Mechanical Characteristics:
ORDERING INFORMATION
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Plated with Pb−Sn or Sn only (Pb−Free)
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MOUNTING POSITION: Any
†
Device
Package
Shipping
MM3ZxxxST1
MM3ZxxxST1G
SOD−323
3000/Tape & Reel
3000/Tape & Reel
SOD−323
(Pb−Free)
MM3ZxxxST3
SOD−323 10,000/Tape & Reel
MM3ZxxxST3G
SOD−323 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P
D
(Note 1) @ T = 25°C
200
1.5
mW
mW/°C
A
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Derate above 25°C
Thermal Resistance from
R
635
°C/W
q
JA
Junction−to−Ambient
Junction and Storage
Temperature Range
T , T
−65 to +150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 Minimum Pad.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
October, 2009 − Rev. 16
MM3Z2V4ST1/D
MM3Z3V3ST1 SERIES
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted,
A
V = 0.9 V Max. @ I = 10 mA for all types)
F
F
Symbol
Parameter
I
V
Z
Reverse Zener Voltage @ I
ZT
I
F
I
ZT
Reverse Current
Z
Maximum Zener Impedance @ I
Reverse Current
ZT
ZK
ZT
I
V
Z
V
R
Z
Maximum Zener Impedance @ I
ZK
ZK
V
I
V
F
R
ZT
I
Reverse Leakage Current @ V
I
R
R
V
Reverse Voltage
Forward Current
R
I
F
V
F
Forward Voltage @ I
F
QV
Maximum Temperature Coefficient of V
Z
Z
Zener Voltage Regulator
C
Max. Capacitance @V = 0 and f = 1 MHz
R
ELECTRICAL CHARACTERISTICS (V = 0.9 Max @ I = 10 mA for all types)
F
F
Z
ZT
Max
IR @ VR
d
@ I
/dt (mV/k)
VZ
I = IZT
Z
I
Z
Z
ZK
= 5 mA
Zener Voltage VZ
ZT1
@ 10%
Mod W
Max
Test
Current
Izt mA
C pF Max @
= 0.5
mA W
Max
Device
V = 0
R
Min
2.90
Max
3.11
mA
V
Min
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
Max
0
Marking
f = 1 MHz
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
105
100
85
Device*
MM3Z3V0ST1, G
MM3Z3V3ST1, G
MM3Z3V9ST1, G
MM3Z4V3ST1, G
MM3Z4V7ST1, G
MM3Z5V1ST1, G
MM3Z5V6ST1, G
MM3Z6V2ST1, G
MM3Z6V8ST1, G
MM3Z7V5ST1, G
MM3Z8V2ST1, G
MM3Z9V1ST1, G
MM3Z10VST1, G
MM3Z12VST1, G
MM3Z15VST1, G
MM3Z16VST1, G
MM3Z18VST1, G
MM3Z22VST1G
MM3Z24VST1G
MM3Z27VST1G
MM3Z33VST1G
MM3Z36VST1G
T4
T5
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
1000
1000
1000
1000
800
500
200
100
160
160
160
160
160
80
100
95
90
90
80
60
40
10
15
15
15
15
15
25
40
40
45
55
70
80
80
90
10
5.0
1.0
3.32
3.53
1.0
0
T7
3.89
4.16
3.0
1.0
−2.5
0
T8
4.17
4.43
3.0
1.0
T9
4.55
4.75
3.0
2.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
10
TA
4.98
5.2
2.0
2.0
TC
TE
TF
5.49
5.73
1.0
2.0
6.06
6.33
3.0
4.0
6.65
6.93
2.0
4.0
1.2
TG
TH
TK
WB
TN
TP
TU
TW
WP
WT
WQ
WR
WU
7.28
7.6
1.0
5.0
2.5
8.02
8.36
0.7
5.0
3.2
8.85
9.23
0.5
6.0
3.8
9.80
10.20
12.24
14.98
16.51
18.35
22.47
24.78
27.53
33.79
36.87
0.5
6.0
4.5
11.74
14.34
15.85
17.56
21.54
23.72
26.19
32.15
35.07
0.1
8.0
6.0
80
0.1
11
8.8
12.7
14
80
0.05
0.05
0.05
0.05
0.05
0.05
0.05
11.2
12.6
15.4
16.8
18.9
23.2
25.2
10.4
12.4
16.4
18.4
21.4
27.4
30.4
80
16
100
120
300
300
500
20
22
80
25.3
33.4
37.4
70
70
70
*The “G’’ suffix indicates Pb−Free package available.
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2
MM3Z3V3ST1 SERIES
TYPICAL CHARACTERISTICS
1000
100
1000
T = 25°C
J
I
= 0.1 I
Z(AC)
Z(DC)
f = 1 kHz
100
I = 1 mA
Z
150°C
10
10
5 mA
75°C 25°C
0.5 0.6
0°C
0.8
1.0
1.0
3.0
10
0.4
0.7
0.9
1.0
1.1
1.2
V , NOMINAL ZENER VOLTAGE
Z
V , FORWARD VOLTAGE (V)
F
Figure 1. Effect of Zener Voltage on
Zener Impedance
Figure 2. Typical Forward Voltage
1000
100
1000
100
10
T = 25°C
A
1 V BIAS
0 V BIAS
BIAS AT
1.0
+150°C
50% OF V NOM
Z
0.1
0.01
10
+25°C
−55°C
0.001
0.0001
1.0
0.00001
4.0
10
0
5.0
V , NOMINAL ZENER VOLTAGE (V)
10
V , NOMINAL ZENER VOLTAGE (V)
Z
Z
Figure 3. Typical Capacitance
Figure 4. Typical Leakage Current
100
10
100
80
T = 25°C
A
60
1.0
40
0.1
20
0
0.01
0
2.0
4.0
6.0
8.0
10
0
25
50
75
100
125
150
V , ZENER VOLTAGE (V)
Z
TEMPERATURE (°C)
Figure 6. Steady State Power Derating
Figure 5. Zener Voltage versus Zener Current
(VZ Up to 9 V)
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3
MM3Z3V3ST1 SERIES
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
H
D
E
1
E
b
2
MILLIMETERS
DIM MIN NOM MAX
0.80
INCHES
NOM MAX
1.00 0.031 0.035 0.040
0.10 0.000 0.002 0.004
0.006 REF
MIN
A
0.90
0.05
A1 0.00
A3
0.15 REF
0.32
0.12 0.177 0.003 0.005 0.007
1.70
1.25
A3
A
b
C
D
E
L
0.25
0.089
1.60
1.15
0.08
2.30
0.4 0.010 0.012 0.016
1.80 0.062 0.066 0.070
1.35 0.045 0.049 0.053
0.003
H
2.50
2.70 0.090 0.098 0.105
E
L
A1
C
STYLE 1:
PIN 1. CATHODE
2. ANODE
NOTE 5
NOTE 3
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MM3Z2V4ST1/D
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