MM74HC14MTCX [ONSEMI]

六路转换施密特触发器;
MM74HC14MTCX
型号: MM74HC14MTCX
厂家: ONSEMI    ONSEMI
描述:

六路转换施密特触发器

PC 栅 光电二极管 逻辑集成电路 触发器
文件: 总10页 (文件大小:341K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
Hex Inverting Schmitt  
Trigger  
14  
1
SOIC−14 NB  
CASE 751A−03  
MM74HC14  
General Description  
14  
The MM74HC14 utilizes advanced silicon−gate CMOS technology  
to achieve the low power dissipation and high noise immunity of  
standard CMOS, as well as the capability to drive 10 LS−TTL loads.  
The 74HC logic family is functionally and pinout compatible with  
the standard 74LS logic family. All inputs are protected from damage  
1
SOIC−14  
CASE 751EF  
14  
due to static discharge by internal diode clamps to V and ground.  
CC  
1
Features  
TSSOP−14 WB  
CASE 948G  
Typical Propagation Delay: 13 ns  
Wide Power Supply Range: 2 V – 6 V  
Low Quiescent Current: 20 mA Maximum (74HC Series)  
Low Input Current: 1 mA Maximum  
Fanout of 10 LS−TTL Loads  
Typical Hysteresis Voltage: 0.9 V at V = 4.5 V  
These Devices are Pb−Free, Halide Free and are RoHS Compliant  
MARKING DIAGRAM  
14  
CC  
HC14A  
AWLYWW  
1
Connection Diagram  
SOIC−14  
14  
HC  
14A  
ALYW  
1
TSSOP−14 WB  
HC14A = Specific Device Code  
A
= Assembly Location  
WL, L = Wafer Lot  
= Year  
Y
WW, W = Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 5 of  
this data sheet.  
Top View  
Figure 1. Pin Assignments for SOIC and TSSOP  
© Semiconductor Components Industries, LLC, 1983  
1
Publication Order Number:  
November, 2022 − Rev. 3  
MM74HC14/D  
MM74HC14  
Logic Diagram  
Figure 2. Logic Diagram  
ABSOLUTE MAXIMUM RATINGS (Note 1)  
Symbol  
Parameter  
Rating  
V
CC  
Supply Voltage  
–0.5 to +7.0 V  
V
IN  
DC Input Voltage  
–0.5 to V + 0.5 V  
CC  
V
DC Output Voltage  
Clamp Diode Current  
DC Output Current, per Pin  
–0.5 to V + 0.5 V  
OUT  
CC  
I , I  
IK OK  
20 mA  
25 mA  
I
OUT  
I
DC V or GND Current, per Pin  
50 mA  
CC  
CC  
T
Storage Temperature Range  
Power Dissipation  
–65°C to +150°C  
600 mW  
STG  
P
Note 2  
S.O. Package Only  
Lead Temperature (Soldering 10 Seconds)  
D
500 mW  
T
260°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Unless otherwise specified all voltages are referenced to ground.  
2. Power Dissipation temperature derating − plastic “N” package: –12 mW/°C from 65°C to 85°C.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
2
Max  
Unit  
V
V
CC  
Supply Voltage  
6
V
, V  
DC Input or Output Voltage  
Operating Temperature Range  
0
V
V
IN OUT  
CC  
T
A
–55  
+125  
°C  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
www.onsemi.com  
2
 
MM74HC14  
DC CHARACTERISTICS (Note 3)  
T
= −40°C  
T = −55°C  
A
to 125°C  
A
to 85°C  
T
A
= 25°C  
V
CC  
(V)  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
4.5  
Typ  
1.2  
2.7  
3.2  
1.2  
2.7  
3.2  
0.7  
1.8  
2.2  
0.7  
1.8  
2.2  
0.5  
0.9  
1.0  
0.5  
0.9  
1.0  
2.0  
4.5  
6.0  
4.2  
Guaranteed Limits  
Symbol  
V
Parameter  
Conditions  
Minimum  
Unit  
Positive Going Threshold Voltage  
1.0  
1.0  
2.0  
3.0  
1.5  
1.0  
2.0  
3.0  
1.5  
V
T+  
2.0  
3.0  
1.5  
3.15  
4.2  
0.3  
0.9  
1.2  
1.0  
2.2  
3.0  
0.2  
0.4  
0.5  
1.0  
1.4  
1.5  
1.9  
4.4  
5.9  
3.98  
Maximum  
Minimum  
Maximum  
Minimum  
Maximum  
3.15  
4.2  
0.3  
0.9  
1.2  
1.0  
2.2  
3.0  
0.2  
0.4  
0.5  
1.0  
1.4  
1.5  
1.9  
4.4  
5.9  
3.84  
3.15  
4.2  
0.3  
0.9  
1.2  
1.0  
2.2  
3.0  
0.2  
0.4  
0.5  
1.0  
1.4  
1.5  
1.9  
4.4  
5.9  
3.7  
V
T–  
Negative Going Threshold Voltage  
V
V
V
V
H
Hysteresis Voltage  
V
OH  
Minimum HIGH Level Output Voltage  
V
IN  
= V or V ,  
IH  
IL  
|I | = 20 mA  
OUT  
V
= V or V ,  
IH IL  
| = 4.0 mA  
IN  
|I  
OUT  
6.0  
V
= V or V ,  
| = 5.2 mA  
5.7  
5.48  
5.34  
5.2  
IN  
IH  
IL  
|I  
OUT  
V
OL  
Maximum LOW Level Output Voltage  
2.0  
4.5  
6.0  
4.5  
V
= V or V ,  
| = 20 mA  
0
0
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.4  
V
IN  
IH  
IL  
|I  
OUT  
0
0.1  
0.1  
V
IN  
= V or V ,  
0.2  
0.26  
0.33  
IH  
IL  
|I | = 4.0 mA  
OUT  
6.0  
V
= V or V ,  
| = 5.2 mA  
0.2  
0.26  
0.33  
0.4  
IN  
IH  
IL  
|I  
OUT  
I
Maximum Input Current  
6.0  
6.0  
V
V
= V or GND  
0.1  
2.0  
1.0  
20  
1.0  
40  
mA  
mA  
IN  
IN  
CC  
I
Maximum Quiescent Supply Current  
= V or  
CC  
CC  
IN  
GND, I  
= 0 mA  
OUT  
3. For a power supply of 5 V 10% the worst case output voltages (V , and V ) occur for HC at 4.5 V. Thus the 4.5 V values should be used  
OH  
OL  
when designing with this supply. Worst case V and V occur at V = 5.5 V and 4.5 V respectively. (The V value at 5.5 V is 3.85 V.) The  
IH  
IL  
CC  
IH  
worst case leakage current (I , I , and I ) occur for CMOS at the higher voltage and so the 6.0 V values should be used.  
IN CC  
OZ  
www.onsemi.com  
3
 
MM74HC14  
AC CHARACTERISTICS (V = 5 V, T = 25°C, C = 15 pF, t = t = 6 ns)  
CC  
A
L
r
f
Symbol  
, t  
Parameter  
Conditions  
Typ  
Guaranteed Limit  
Unit  
t
Maximum Propagation Delay  
12  
22  
ns  
PHL PLH  
AC CHARACTERISTICS (V = 2.0 V to 6.0 V, C = 50 pF, t = t = 6 ns (unless otherwise specified))  
CC  
L
r
f
T
= −40°C  
T = −55°C  
A
to 125°C  
A
to 85°C  
T
A
= 25°C  
V
CC  
(V)  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
Typ  
60  
13  
11  
30  
8
Guaranteed Limits  
Symbol  
, t  
Parameter  
Conditions  
Unit  
t
Maximum Propagation Delay  
125  
156  
31  
26  
95  
19  
16  
188  
ns  
PHL PLH  
25  
21  
75  
15  
13  
38  
32  
110  
22  
19  
t
, t  
Maximum Output Rise and Fall Time  
ns  
TLH THL  
7
C
PD  
Power Dissipation Capacitance (Note 4)  
Maximum Input Capacitance  
(per gate)  
27  
5
pF  
pF  
C
IN  
10  
10  
10  
2
4. C determines the no load dynamic power consumption, P = C  
V
f + I  
V
, and the no load dynamic current consumption,  
PD  
D
PD CC  
CC CC  
I
S
= C  
V
f + I  
.
PD CC  
CC  
TYPICAL PERFORMANCE CHARACTERISTICS  
Figure 3. Input Threshold, VT+, VT–, vs.  
Power Supply Voltage  
Figure 4. Propagation Delay vs. Power Supply  
www.onsemi.com  
4
 
MM74HC14  
TYPICAL APPLICATIONS  
t1 [ RC In  
VT)  
VT*  
(eq. 1)  
VCC * VT*  
VCC * VT)  
t2 [ RC In  
f [  
(eq. 2)  
(eq. 3)  
1
ǒ
T) VCC*VT*  
Ǔ
Ǔ
V
RC In  
ǒ
T* VCC*VT)  
V
NOTE: The equations assume t + t >> t  
+ t  
pd1  
1
2
pd0  
Figure 5. Low Power Oscillator  
ORDERING INFORMATION  
Part Number  
Package  
Shipping  
MM74HC14M  
SOIC−14, Case 751A−03  
(Pb−Free, Halide−Free)  
55 Units / Tube  
96 Units / Tube  
MM74HC14MTC  
MM74HC14MX  
MM74HC14MTCX  
TSSOP−14, Case 948G−01  
(Pb−Free, Halide Free)  
SOIC−14, Case 751EF  
(Pb−Free, Halide−Free)  
2500 Units / Tape & Reel  
2500 Units / Tape & Reel  
TSSOP−14, Case 948G−01  
(Pb−Free, Halide Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
5
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOIC14 NB  
CASE 751A03  
ISSUE L  
14  
1
DATE 03 FEB 2016  
SCALE 1:1  
NOTES:  
D
A
B
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION  
SHALL BE 0.13 TOTAL IN EXCESS OF AT  
MAXIMUM MATERIAL CONDITION.  
4. DIMENSIONS D AND E DO NOT INCLUDE  
MOLD PROTRUSIONS.  
14  
8
7
A3  
E
H
5. MAXIMUM MOLD PROTRUSION 0.15 PER  
SIDE.  
L
DETAIL A  
1
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
13X b  
M
M
B
0.25  
A
A1  
A3  
b
D
E
1.35  
0.10  
0.19  
0.35  
8.55  
3.80  
1.75 0.054 0.068  
0.25 0.004 0.010  
0.25 0.008 0.010  
0.49 0.014 0.019  
8.75 0.337 0.344  
4.00 0.150 0.157  
M
S
S
B
0.25  
C A  
DETAIL A  
h
A
X 45  
_
e
H
h
L
1.27 BSC  
0.050 BSC  
6.20 0.228 0.244  
0.50 0.010 0.019  
1.25 0.016 0.049  
5.80  
0.25  
0.40  
0
0.10  
M
A1  
e
M
7
0
7
_
_
_
_
SEATING  
PLANE  
C
GENERIC  
MARKING DIAGRAM*  
SOLDERING FOOTPRINT*  
6.50  
14  
14X  
1.18  
XXXXXXXXXG  
AWLYWW  
1
1
XXXXX = Specific Device Code  
A
WL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
1.27  
PITCH  
WW  
G
= Work Week  
= PbFree Package  
14X  
0.58  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
STYLES ON PAGE 2  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42565B  
SOIC14 NB  
PAGE 1 OF 2  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
SOIC14  
CASE 751A03  
ISSUE L  
DATE 03 FEB 2016  
STYLE 1:  
STYLE 2:  
CANCELLED  
STYLE 3:  
STYLE 4:  
PIN 1. NO CONNECTION  
2. CATHODE  
PIN 1. COMMON CATHODE  
2. ANODE/CATHODE  
3. ANODE/CATHODE  
4. NO CONNECTION  
5. ANODE/CATHODE  
6. NO CONNECTION  
7. ANODE/CATHODE  
8. ANODE/CATHODE  
9. ANODE/CATHODE  
10. NO CONNECTION  
11. ANODE/CATHODE  
12. ANODE/CATHODE  
13. NO CONNECTION  
14. COMMON ANODE  
PIN 1. NO CONNECTION  
2. ANODE  
3. ANODE  
4. NO CONNECTION  
5. ANODE  
6. NO CONNECTION  
7. ANODE  
8. ANODE  
9. ANODE  
10. NO CONNECTION  
11. ANODE  
12. ANODE  
13. NO CONNECTION  
14. COMMON CATHODE  
3. CATHODE  
4. NO CONNECTION  
5. CATHODE  
6. NO CONNECTION  
7. CATHODE  
8. CATHODE  
9. CATHODE  
10. NO CONNECTION  
11. CATHODE  
12. CATHODE  
13. NO CONNECTION  
14. COMMON ANODE  
STYLE 5:  
STYLE 6:  
STYLE 7:  
STYLE 8:  
PIN 1. COMMON CATHODE  
2. ANODE/CATHODE  
3. ANODE/CATHODE  
4. ANODE/CATHODE  
5. ANODE/CATHODE  
6. NO CONNECTION  
7. COMMON ANODE  
8. COMMON CATHODE  
9. ANODE/CATHODE  
10. ANODE/CATHODE  
11. ANODE/CATHODE  
12. ANODE/CATHODE  
13. NO CONNECTION  
14. COMMON ANODE  
PIN 1. CATHODE  
2. CATHODE  
3. CATHODE  
4. CATHODE  
5. CATHODE  
6. CATHODE  
7. CATHODE  
8. ANODE  
PIN 1. ANODE/CATHODE  
2. COMMON ANODE  
3. COMMON CATHODE  
4. ANODE/CATHODE  
5. ANODE/CATHODE  
6. ANODE/CATHODE  
7. ANODE/CATHODE  
8. ANODE/CATHODE  
9. ANODE/CATHODE  
10. ANODE/CATHODE  
11. COMMON CATHODE  
12. COMMON ANODE  
13. ANODE/CATHODE  
14. ANODE/CATHODE  
PIN 1. COMMON CATHODE  
2. ANODE/CATHODE  
3. ANODE/CATHODE  
4. NO CONNECTION  
5. ANODE/CATHODE  
6. ANODE/CATHODE  
7. COMMON ANODE  
8. COMMON ANODE  
9. ANODE/CATHODE  
10. ANODE/CATHODE  
11. NO CONNECTION  
12. ANODE/CATHODE  
13. ANODE/CATHODE  
14. COMMON CATHODE  
9. ANODE  
10. ANODE  
11. ANODE  
12. ANODE  
13. ANODE  
14. ANODE  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42565B  
SOIC14 NB  
PAGE 2 OF 2  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOIC14  
CASE 751EF  
ISSUE O  
DATE 30 SEP 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13739G  
SOIC14  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TSSOP14 WB  
CASE 948G  
ISSUE C  
14  
DATE 17 FEB 2016  
1
SCALE 2:1  
NOTES:  
14X K REF  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
M
S
S
V
0.10 (0.004)  
T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL  
IN EXCESS OF THE K DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
S
0.15 (0.006) T U  
N
0.25 (0.010)  
14  
8
2X L/2  
M
B
L
N
U−  
PIN 1  
IDENT.  
F
7
1
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
DETAIL E  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE W.  
S
K
0.15 (0.006) T U  
A
V−  
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
K1  
A
B
C
D
F
G
H
J
4.90  
4.30  
−−−  
0.05  
0.50  
5.10 0.193 0.200  
4.50 0.169 0.177  
J J1  
1.20  
−−− 0.047  
0.15 0.002 0.006  
0.75 0.020 0.030  
SECTION NN  
0.65 BSC  
0.026 BSC  
0.60 0.020 0.024  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
0.50  
0.09  
0.09  
0.19  
J1  
K
W−  
C
K1 0.19  
L
M
6.40 BSC  
0.252 BSC  
0.10 (0.004)  
0
8
0
8
_
_
_
_
SEATING  
PLANE  
T−  
H
G
DETAIL E  
D
GENERIC  
MARKING DIAGRAM*  
14  
SOLDERING FOOTPRINT  
XXXX  
XXXX  
ALYWG  
G
7.06  
1
1
A
L
= Assembly Location  
= Wafer Lot  
Y
W
G
= Year  
= Work Week  
= PbFree Package  
0.65  
PITCH  
(Note: Microdot may be in either location)  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
01.34X6  
14X  
1.26  
DIMENSIONS: MILLIMETERS  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASH70246A  
TSSOP14 WB  
PAGE 1 OF 1  
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