MMBD1204 [ONSEMI]
100 V，200 mA 小信号二极管;
| 型号： | MMBD1204 |
| 厂家： | 
ONSEMI |
| 描述： | 100 V，200 mA 小信号二极管 PC 光电二极管 信号二极管 |
| 文件： | 总7页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Small Signal Diodes
MMBD1201 - MMBD1205
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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ABSOLUTE MAXIMUM RATINGS (Note 1, Note 2)
Values are at T = 25°C unless otherwise noted.
A
Symbol
Parameter
Value
Unit
CONNECTION DIAGRAM
V
RRM
Maximum Repetitive Reverse
Voltage
100
V
3
3
1202
1201
I
Average Rectified Forward Current
200
1.0
mA
A
F(AV)
I
Non−Repetitive Peak
Forward Surge
Current
Pulse Width =
FSM
1
2
3
1.0 s
3
1203
1
1204
Pulse Width =
2.0
1.0 ms
T
Storage Temperature Range
−55 to + 150
°C
°C
2
1
2
STG
3
1205
T
J
Operating Junction Temperature
150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
2
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady−state limits. ON Semiconductor should be consulted
on applications involving pulsed or low−duty−cycle operations.
THERMAL CHARACTERISTICS
SOT−23
CASE 318−08
Values are at T = 25°C unless otherwise noted.
A
Symbol
Parameter
Power Dissipation
Value
350
2.8
Unit
mW
P
D
MARKING DIAGRAM
Derate Above 25°C
mW/°C
°C/W
R
Thermal Resistance,
Junction−to−Ambient
357
2xM G
θ
JA
G
2x
= Specific Device Code
x = 4, 5, 6, 7, 8
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
MMBD1201,
MMBD1202,
MMBD1203,
MMBD1204,
MMBD1205
SOT−23
(Pb−Free
Halide Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
July, 2021 − Rev. 3
MMBD1202/D
MMBD1201 − MMBD1205
ELECTRICAL CHARACTERISTICS Values are at T = 25°C unless otherwise noted.
A
Symbol
Parameter
Breakdown Voltage
Conditions
I = 100 mA
R
Min.
100
550
660
820
0.87
−
Max.
−
Unit
V
V
R
V
F
Forward Voltage
I = 1.0 mA
F
600
740
920
1.0
1.1
25
mV
mV
mV
V
I = 10 mA
F
I = 100 mA
F
I = 200 mA
F
I = 300 mA
F
V
I
R
Reverse Current
V
R
V
R
V
R
V
R
= 20 V
= 50 V
−
nA
nA
mA
pF
ns
−
50
= 50 V, T = 150°C
−
100
2.0
4.0
A
C
Total Capacitance
= 0 V, f = 1.0 MHz
−
T
t
rr
Reverse Recovery Time
I = I = 10 mA, I = 1.0 mA,
−
F
L
R
RR
R = 100 W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL PERFORMANCE CHARACTERISTICS
150
T = 25°C
A
T = 25°C
A
300
250
200
150
140
130
120
110
100
50
0
1
2
3
5
10
20 30
50
100
10
20
30
50
70
100
I , Reverse Current (mA)
R
V , Reverse Voltage (V)
R
Figure 1. Reverse Voltage vs. Reverse Current
Figure 2. Reverse Current vs. Reverse Voltage
IR @ VR = 10 to 100 V
VR @ IR = 1.0 to 100 mA
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2
MMBD1201 − MMBD1205
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
T = 25°C
A
T = 25°C
A
700
450
400
650
600
550
500
350
300
250
450
1
2
3
5
10
20 30
50
100
0.1
0.2 0.3 0.5
1
2
3
5
10
I , Forward Current (mA)
F
I , Forward Current (mA)
F
Figure 3. Forward Voltage vs. Forward Current
Figure 4. Forward Voltage vs. Forward Current
VF @ IF = 0.1 to 10 mA
VF @ IF = 1.0 to 100 mA
1.3
1.2
T = 25°C
T = 25°C
A
A
1.4
1.2
1.0
0.8
0
1.1
1.0
10
20 30
50
100
200 300 500
0
2
4
6
8
10
12
14
I , Forward Current (mA)
F
Reverse Voltage (V)
Figure 5. Forward Voltage vs. Forward Current
VF @ IF = 10 to 800 mA
Figure 6. Total Capacitance vs. Reverse Voltage
4.0
3.5
400
300
T = 25°C
A
3.0
2.5
I , Average Rectified Current (mA)
P(AV)
200
100
0
2.0
1.5
1.0
10
20
30
40
50
60
0
50
100
150
Reverse Current (mA)
T , Ambient Temperature (5C)
A
Figure 7. Reverse Recovery Time vs. Reverse Current
Figure 8. Average Rectified Current (IF(AV)) vs. Ambient
Temperature (TA)
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3
MMBD1201 − MMBD1205
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
500
400
300
200
SOT−23 P kg
100
0
0
50
100
150
200
I , Average Temperature (5C)
O
Figure 9. Power Derating Curve
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. COLLECTOR
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1. ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE−ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
2. ANODE
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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