MMBD1403ALT1G [ONSEMI]
250 V Switching Diode;型号: | MMBD1403ALT1G |
厂家: | ONSEMI |
描述: | 250 V Switching Diode |
文件: | 总6页 (文件大小:206K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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Dual Series High Voltage
Switching Diode
1401A
3
1403A
3
MMBD1401ALT1G,
MMBD1403ALT1G
1
2NC
1
2
3
Features
• Moisture Sensitivity Level: 1
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
2
Compliant
SOT−23
CASE 318
MAXIMUM RATINGS
MARKING DIAGRAM
Rating
Symbol
Value
250
250
225
600
700
625
Unit
V
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Current
V
R
XXXMG
V
RRM
V
G
I
I
mA
mA
mA
mA
F
1
DC Forward Current
F
XXX= Specific Device Code
MMBD1401: A29
Recurrent Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
I
f
MMBD1403: A32
I
FM(surge)
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
Symbol
Max
Unit
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Total Device Dissipation FR−5 Board
P
225
mW
D
(Note 1)
T = 25°C
A
Derate above 25°C
1.8
mW/°C
°C/W
ORDERING INFORMATION
Thermal Resistance,
Junction to Ambient
R
556
ꢀ
JA
†
Device
Package
Shipping
Total Device Dissipation
P
300
mW
D
MMBD1401ALT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
Alumina Substrate, (Note 2)
T = 25°C
A
Derate above 25°C
2.4
mW/°C
°C/W
MMBD1403ALT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
Thermal Resistance,
Junction to Ambient
R
417
ꢀ
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Junction and Storage
Temperature Range
T , T
J
−55 to
+150
°C
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
November, 2022 − Rev. 0
MMBD1401AL/D
MMBD1401ALT1G, MMBD1403ALT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
I
R
nA
(V = 200 Vdc)
−
−
40
100
R
(V = 175 Vdc)
R
Reverse Breakdown Voltage
BR
V
(BR)
250
−
V
(I = 100 ꢁ Adc)
Forward Voltage
V
F
(I = 10 mA)
−
760
−
800
920
1.1
mV
mV
V
F
(I = 50 mA)
F
(I = 200 mA)
F
(I = 300 mA)
−
1.25
V
F
Diode Capacitance
R
C
−
−
5.0
50
pF
ns
D
(V = 0, f = 1.0 MHz)
Reverse Recovery Time
t
rr
(I = I = 30 mA, I = 1.0 mA, R = 100 ꢂ)
F
R
RR
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 ꢂ
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 ꢁ F
I
F
t
t
100 ꢁ H
rr
10%
90%
0.1 ꢁ F
D.U.T.
i
= 3.0 mA
R(REC)
50 ꢂ OUTPUT
PULSE
50 ꢂ INPUT
SAMPLING
I
R
V
R
OUTPUT PULSE
(I = I = 30 mA; MEASURED
GENERATOR
OSCILLOSCOPE
INPUT SIGNAL
F
R
at i
= 3.0 mA)
R(REC)
Notes: 1. A 2.0 kꢂ variable resistor adjusted for a Forward Current (I ) of 30 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 30 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
MMBD1401ALT1G, MMBD1403ALT1G
TYPICAL CHARACTERISTICS
1200
1000
800
7000
6000
T = −55°C
A
T = 155°C
A
5000
4000
3000
25°C
155°C
6
5
4
3
2
1
0
600
400
T = 25°C
A
200
1
T = −55°C
A
1
10
100
1000
1
2
5
10
20
50
100 200 300
FORWARD CURRENT (mA)
REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. COLLECTOR
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1. ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE−ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
2. ANODE
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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