MMBD301M3T5G [ONSEMI]
Silicon Hot-Carrier Diode; 硅热载流子二极管
| 型号： | MMBD301M3T5G |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Hot-Carrier Diode |
| 文件： | 总3页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD301M3T5G
Silicon Hot-Carrier Diode
SCHOTTKY Barrier Diode
The MMBD301M3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed primarily for
high−efficiency UHF and VHF detector applications. It is readily
adaptable to many other fast switching RF and digital applications
and is housed in the SOT−723 surface mount package. This device is
ideal for low−power surface mount applications where board space is
at a premium.
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30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.5 pF (Max) @ V = 15 V
R
3
1
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
CATHODE
ANODE
MARKING
DIAGRAM
3
MAXIMUM RATINGS
SOT−723
CASE 631AA
STYLE 2
AK M
Rating
Symbol
Value
Unit
2
Reverse Voltage
V
R
30
V
1
Total Device Dissipation
P
F
AK
M
= Specific Device Code
= Date Code
@ T = 25°C
200
2.0
mW
mW/°C
A
Derate above 25°C
Operating Junction Temperature Range
Storage Temperature Range
T
−55 to +125
−55 to +150
°C
°C
J
T
stg
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
RecommendedOperating Conditions may affect device reliability.
†
Device
MMBD301M3T5G
Package
Shipping
SOT−723 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
30
−
Typ
−
Max
−
Unit
V
Reverse Breakdown Voltage (I = 10 mA)
V
(BR)R
R
Total Capacitance (V = 15 V, f = 1.0 MHz) Figure 1
C
T
0.9
13
1.5
200
0.45
0.6
pF
R
Reverse Leakage (V = 25 V) Figure 3
I
R
−
nAdc
Vdc
Vdc
R
Forward Voltage (I = 1.0 mAdc) Figure 4
V
−
0.38
0.52
F
F
F
Forward Voltage (I = 10 mAdc) Figure 4
V
−
F
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
January, 2009 − Rev. 0
MMBD301M3/D
MMBD301M3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
2.8
2.4
500
f = 1.0 MHz
400
2.0
1.6
1.2
0.8
0.4
0
KRAKAUER METHOD
300
200
100
0
0
3.0 6.0 9.0
12
15
18
21
24
27
30
0
10
20
30
40
50
60
70
80
90 100
V , REVERSE VOLTAGE (VOLTS)
R
I , FORWARD CURRENT (mA)
F
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
10
100
10
T = 100°C
A
1.0
T = -ꢀ40°C
T = 85°C
A
A
75°C
25°C
0.1
1.0
0.1
T = 25°C
A
0.01
0.001
0
6.0
12
18
24
30
0.2
0.4
0.6
0.8
1.0
1.2
V , REVERSE VOLTAGE (VOLTS)
R
V , FORWARD VOLTAGE (VOLTS)
F
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
I
F(PEAK)
CAPACITIVE
CONDUCTION
I
R(PEAK)
FORWARD
STORAGE
CONDUCTION
CONDUCTION
BALLAST
NETWORK
(PADS)
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
SINUSOIDAL
GENERATOR
PADS
DUT
Figure 5. Krakauer Method of Measuring Lifetime
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2
MMBD301M3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
MILLIMETERS
INCHES
NOM MAX
0.018 0.020 0.022
HE
L
1
2
DIM MIN
NOM
0.50
0.21
0.31
0.12
1.20
0.80
MAX
0.55
0.27 0.0059 0.0083 0.0106
0.37 0.010 0.012 0.015
0.17 0.0028 0.0047 0.0067
1.25
0.85
MIN
A
b
b1
C
D
E
e
H E
L
0.45
0.15
0.25
0.07
1.15
0.75
b 2X
C
e
0.08 (0.0032) X Y
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
STYLE 2:
PIN 1. ANODE
2. N/C
0.40 BSC
1.20
0.20
1.15
0.15
1.25
0.045 0.047 0.049
0.25 0.0059 0.0079 0.0098
3. CATHODE
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
mm
ǒinches
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
MountingTechniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
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MMBD301M3/D
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