MMBD4148SE [ONSEMI]
高导通超高速二极管;
| 型号： | MMBD4148SE |
| 厂家： | 
ONSEMI |
| 描述： | 高导通超高速二极管 二极管 |
| 文件： | 总7页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Small Signal Diode
3
1
MMBD4148SE,
MMBD4148CC,
MMBD4148CA
2
SOT−23 (TO−236)
CASE 318−08
Features
• These are Pb−Free Devices
MARKING DIAGRAM
DxM G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
G
Rating
Symbol
Value
Unit
1
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
V
100
V
RRM
Dx = Device Code
I
200
mA
A
F(AV)
x = 4, 5, 6
M
= Assembly Operation Month
Non−Repetitive Peak Forward
Surge Current
I
FSM
G
= Pb−Free Package
Pulse Width = 1.0 s
Pulse Width = 1.0 ms
1.0
2.0
(Note: Microdot may be in either location)
Operating Junction Temperature Range
Storage Temperature Range
T
−55 to +150
−55 to +150
°C
°C
J
T
STG
CONNECTION DIAGRAMS
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Power Dissipation
Thermal Resistance, Junction−to−Ambient
Symbol
Value
Unit
P
D
350
mW
R
q
JA
357
°C/W
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol Min
Typ
Max
Unit
Breakdown Voltage
V
R
V
I
R
I
R
= 5.0 mA
75
100
−
−
−
−
= 100 mA
ORDERING INFORMATION
See detailed ordering and shipping information on page 4
of this data sheet.
Forward Voltage
V
F
V
I = 10 mA
−
−
1.0
F
Reverse Leakage Current
I
R
V
R
V
R
V
R
= 20 V
−
−
−
−
−
−
25
50
5.0
nA
mA
mA
= 20 V, T = 150°C
A
= 75 V
Total Capacitance
= 0 V, f = 1.0 MHz
C
pF
T
V
R
−
−
−
−
4.0
4.0
Reverse Recovery Time
t
rr
ns
I = 10 mA, V = 6.0 V,
F
RR
R
I
= 1.0 mA, R = 100 W
L
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different conditions.
©
Semiconductor Components Industries, LLC,2004
1
Publication Order Number:
February, 2022 − Rev. 3
MMBD4148SE/D
MMBD4148SE, MMBD4148CC, MMBD4148CA
TYPICAL PERFORMANCE CHARACTERISTICS
150
140
Ta = 25°C
Ta = 25°C
300
250
200
150
100
50
130
120
110
0
10
20
30
70
100
1
2
3
5
10
20 30
50
100
50
I , REVERSE CURRENT (mA)
R
V , REVERSE VOLTAGE (V)
R
Figure 1. Reverse Voltage vs. Reverse Current
Figure 2. Reverse Current vs. Reverse Voltage
BV − 1.0 to 100 mA
IR − 10 to 100 V
Ta = 25°C
Ta = 25°C
700
650
600
550
500
450
450
400
350
300
250
1
2
3
5
10
20 30
50
100
0.1
0.2 0.3 0.5
1
2
3
5
10
I , FORWARD CURRENT (mA)
F
I , REVERSE CURRENT (mA)
F
Figure 3. Forward Voltage vs. Forward Current
Figure 4. Forward Voltage vs. Forward Current
VF − 1.0 to 100 mA
VF − 0.1 to 10 mA
1.3
1.2
1.1
1.0
Ta = 25°C
Ta = 25°C
1.4
1.2
1.0
0.8
0.6
6
8
12
14
100
200 300 500
0
2
4
10
10
20
30
50
REVERSE VOLTAGE (V)
I , FORWARD CURRENT (mA)
F
Figure 5. Forward Voltage vs. Forward Current
Figure 6. Total Capacitance vs. Reverse Voltage
VF − 10 to 800 mA
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2
MMBD4148SE, MMBD4148CC, MMBD4148CA
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
400
Ta = 25°C
300
I
− AVERAGE RECTIFIED CURRENT (mA)
F(AV)
200
100
0
0
50
100
150
10
20
30
40
50
60
REVERSE CURRENT (mA)
T , AMBIENT TEMPERATURE (°C)
A
Figure 7. Reverse Recovery Time vs. Reverse Current
Figure 8. Average Rectified Current (IF(AV)
vs. Ambient Temperature (TA)
)
TRR − IR 10 mA to 60 mA
500
400
300
SOT−23 Pkg
200
100
0
0
50
100
150
200
I , AVERAGE TEMPERATURE (°C)
O
Figure 9. Power Derating Curve
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3
MMBD4148SE, MMBD4148CC, MMBD4148CA
ORDERING INFORMATION
†
Part Number
Top Mark
Package
Pinout
Pinout Style
Shipping
MMBD4148SE
D4
SOT−23
(Pb−Free)
pin 1 = Anode, pin 2 = Cathode,
pin 3 = Cathode/Anode
Style 11
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
MMBD4148CC
MMBD4148CA
D5
D6
pin 1 = Anode, pin 2 = Anode,
pin 3 = Cathode
Style 23
Style 12
pin 1 = Cathode, pin 2 = Cathode,
pin 3 = Anode/Anode
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. COLLECTOR
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1. ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE−ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
2. ANODE
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
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