MMBD701LT3G [ONSEMI]
Silicon Hot−Carrier Diodes Schottky Barrier Diodes; 硅热载流子二极管肖特基势垒二极管
| 型号： | MMBD701LT3G |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Hot−Carrier Diodes Schottky Barrier Diodes |
| 文件： | 总4页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBD701, MMBD701LT1
Preferred Device
Silicon Hot−Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
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MARKING
DIAGRAMS
Features
TO−92 2−Lead
CASE 182
STYLE 1
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
MBD
701
• Very Low Capacitance − 1.0 pF @ V = 20 V
R
AYWW G
• High Reverse Voltage − to 70 V
• Low Reverse Leakage − 200 nA (Max)
• Pb−Free Packages are Available
1
G
2
2
1
CATHODE
ANODE
MAXIMUM RATINGS
SOT−23 (TO−236)
CASE 318
Rating
Reverse Voltage
Symbol
Value
Unit
3
STYLE 6
V
R
70
V
1
5H M G
G
Forward Power Dissipation
P
F
2
@ T = 25°C
MBD701
280
200
mW
3
1
A
1
MMBD701LT
CATHODE
ANODE
Derate above 25°C
MBD701
MMBD701LT
2.8
2.0
mW/°C
°C
A
Y
= Assembly Location
= Year
Operating Junction Temperature
Range
T
J
−55 to +125
WW = Work Week
5H = Device Code (SOT−23)
Storage Temperature Range
T
stg
−55 to +150
°C
M
= Date Code*
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
RecommendedOperating Conditions may affect device reliability.
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
dependingupon manufacturing location.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
ORDERING INFORMATION
Characteristic
Symbol Min Typ Max
Unit
†
Device
MBD701
Package
Shipping
Reverse Breakdown Voltage
V
(BR)R
70
−
−
V
TO−92
1,000 Units / Box
1,000 Units / Box
(I = 10 mAdc)
R
MBD701G
TO−92
(Pb−Free)
Total Capacitance
C
T
−
0.5
1.0
pF
nAdc
Vdc
Vdc
(V = 20 V, f = 1.0 MHz) Figure 1
R
MMBD701LT1
SOT−23 3,000 / Tape & Reel
Reverse Leakage
I
−
9.0 200
0.42 0.5
R
MMBD701LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
(V = 35 V) Figure 3
R
Forward Voltage
V
V
−
F
MMBD701LT3
SOT−23 10,000/Tape & Reel
(I = 1.0 mAdc) Figure 4
F
MMBD701LT3G
SOT−23 10,000/Tape & Reel
(Pb−Free)
Forward Voltage
−
0.7
1.0
F
(I = 10 mAdc) Figure 4
F
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
October, 2006 − Rev. 4
MBD701/D
MBD701, MMBD701LT1
TYPICAL ELECTRICAL CHARACTERISTICS
500
2.0
1.6
1.2
0.8
0.4
0
f = 1.0 MHz
400
KRAKAUER METHOD
300
200
100
0
0
5.0
10
15
20
25
30
35
40
45
50
0
10
20
30
40
50
60
70
80
90 100
V , REVERSE VOLTAGE (VOLTS)
R
I , FORWARD CURRENT (mA)
F
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
10
100
10
T = 100°C
A
1.0
T = ꢀ40°C
A
T = 85°C
A
T = 75°C
A
0.1
1.0
0.1
T = 25°C
A
0.01
T = 25°C
A
0.001
0
10
20
30
40
50
0
0.2
0.4
0.8
1.2
1.6
2.0
V , REVERSE VOLTAGE (VOLTS)
R
V , FORWARD VOLTAGE (VOLTS)
F
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
I
F(PEAK)
CAPACITIVE
CONDUCTION
I
R(PEAK)
FORWARD
STORAGE
CONDUCTION
CONDUCTION
BALLAST
NETWORK
(PADS)
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
SINUSOIDAL
GENERATOR
PADS
DUT
Figure 5. Krakauer Method of Measuring Lifetime
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2
MBD701, MMBD701LT1
PACKAGE DIMENSIONS
TO−92 (TO−226AC)
CASE 182−06
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
SEATING
PLANE
D
INCHES
DIM MIN MAX
MILLIMETERS
L
P
MIN
4.45
4.32
3.18
0.407
MAX
5.21
5.33
4.19
0.533
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.205
0.210
0.165
0.021
J
K
0.050 BSC
0.100 BSC
1.27 BSC
2.54 BSC
0.36
SECTION X−X
X X
0.014
0.016
−−−
−−−
0.41
−−−
−−−
2.66
1.27
−−−
−−−
D
K
L
0.500
0.250
0.080
−−−
12.70
6.35
2.03
−−−
G
N
P
R
V
0.105
0.050
−−−
H
0.115
0.135
2.93
3.43
−−−
V
C
STYLE 1:
PIN 1. ANODE
2. CATHODE
1
2
N
N
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3
MBD701, MMBD701LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
3
H
E
E
c
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
b
0.25
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
e
q
A
L
A1
L1
VIEW C
H
E
2.10
2.40
2.64
0.083
0.094
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
MountingTechniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
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MBD701/D
相关型号：
MMBD701T3
Mixer Diode, Ultra High Frequency, Silicon, TO-236AB, PLASTIC, CASE 318-08, 3 PIN
MOTOROLA
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