MMBF5457 [ONSEMI]
N沟道通用放大器;
| 型号： | MMBF5457 |
| 厂家： | 
ONSEMI |
| 描述： | N沟道通用放大器 放大器 PC 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：1696K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
G
N-Channel General Purpose
Amplifier
D
S
NOTE: Source & Drain
are interchangeable
MMBF5457
This device is a low level audio amplifier and switching transistors,
and can be used for analog switching applications. Sourced
from Process 55.
SOT−23
CASE 318−08
ABSOLUTE MAXIMUM RATINGS* (T = 25°C unless otherwise noted)
A
MARKING DIAGRAM
Symbol
Rating
Drain−Gate Voltage
Value
25
Unit
V
V
V
DG
GS
GF
6DM
Gate−Source Voltage
−25
V
1
I
Forward Gate Current
10
mA
°C
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
6D = Device Code
J
stg
M
= Date Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*These rating are limiting values above which the serviceability of any
semiconductor device may be impaired.
1. These rating are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications
involving pulsed or low duty cycle operations.
ORDERING INFORMATION
†
Device
MMBF5457
Package
Shipping
3000 /
Tape & Reel
SOT−23
(Pb−Free,
Halide Free)
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Max
*MMBF5457
Symbol
Characteristic
Unit
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
Thermal Resistance,
Junction to Case
−
°C/W
q
JC
JA
R
Thermal Resistance,
Junction to Ambient
556
°C/W
q
*Device mounted on FR−4 PCB 1.6” x 1.6” x 0.06”.
© Semiconductor Components Industries, LLC, 1997
1
Publication Order Number:
January, 2023 − Rev. 1
MMBF5457/D
MMBF5457
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
Gate−Source Breakdown Voltage
I
G
= 10 mA, V = 0
−25
−
−
V
(BR)GSS
DS
I
Gate Reverse Current
V
GS
V
GS
= −15 V, V = 0
−
−
−
−
−1.0
−200
nA
nA
GSS
DS
= −15 V, V = 0, T = 100°C
DS
A
V
Gate−Source Cutoff Voltage
Gate−Source Voltage
V
DS
V
DS
= 15 V, I = 10 nA
−0.5
−
−6.0
V
V
GS(off)
D
V
GS
= 15 V, I = 100 mA
−
−2.5
−
D
ON CHARACTERISTICS
I
Zero−Gate Voltage Drain Current
(Note 3)
V
DS
= 15 V, V = 0
1.0
3.0
5.0
mA
DSS
GS
SMALL SIGNAL CHARACTERISTICS
g
fs
Forward Transfer Conductance
(Note 3)
V
DS
= 15 V, V = 0, f = 1.0 kHz
1000
−
5000
mmhos
GS
g
Output Conductance (Note 3)
Input Capacitance
V
V
V
V
= 15 V, V = 0, f = 1.0 kHz
−
−
−
−
10
4.5
1.5
−
50
7.0
3.0
3.0
mmhos
pF
os
DS
DS
DS
DS
GS
C
= 15 V, V = 0, f = 1.0 MHz
GS
iss
rss
C
Reverse Transfer Capacitance
Noise Figure
= 15 V, V = 0, f = 1.0 MHz
pF
GS
NF
= 15 V, V = 0, f = 1.0 kHz,
dB
GS
R
= 1.0 MW, BW = 1.0 Hz
G
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
www.onsemi.com
2
MMBF5457
TYPICAL CHARACTERISTICS
20
16
12
10
8
6
8
4
0
4
2
0
0
−5
−1
−2
−3
−4
0
−1
−2
−3
V
GS
, GATE SOURCE VOLTAGE (V)
V
GS
, GATE SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
Figure 1. Transfer Characteristics
10
8
8
6
4
2
0
6
4
2
0
−3
, GATE SOURCE VOLTAGE (V)
0
−1
−2
0
−1
−2
−3
−5
−4
V
GS
V
GS
, GATE SOURCE VOLTAGE (V)
Figure 3. Transfer Characteristics
Figure 4. Transfer Characteristics
5
4
3
2
100
10
10
1
1
0
0.1
1
−1
0
1
3
4
5
−2
−5
−10
2
V
DS
, DRAIN SOURCE VOLTAGE (V)
V , GATE CUTOFF VOLTAGE (V)
GS(OFF)
Figure 5. Common Drain−Source
Figure 6. Parameter Interaction
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3
MMBF5457
TYPICAL CHARACTERISTICS (CONTINUED)
10
100
10
1
1
0.1
0.1
1
10
0.01
0.1
1
10
I , DRAIN CURRENT (mA)
D
I , DRAIN CURRENT (mA)
D
Figure 8. Transconductance vs. Drain Current
Figure 7. Output Conductance vs. Drain Current
1k
100
100
10
10
1
−75
−25
25
75
125
175
100
0.01
0.1
10
1
T , AMBIENT TEMPERATURE (°C)
A
f, FREQUENCY (kHz)
Figure 9. Channel Resistance vs. Temperature
Figure 10. Noise Voltage vs. Frequency
10
10k
1k
5
100
10
1
1
−10
, GATE SOURCE VOLTAGE (V)
0
−2
−4
−6
−8
0
10
20
30
40
50
V
DG
, DRAIN GATE VOLTAGE (V)
V
GS
Figure 11. Leakage Current vs. Voltage
Figure 12. Capacitance vs. Voltage
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4
MMBF5457
TYPICAL CHARACTERISTICS (CONTINUED)
700
600
500
SOT−23
400
300
200
100
0
0
25
50
75
100
125
150
TEMPERATURE (°C)
Figure 13. Power Dissipation vs. Ambient Temperature
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. COLLECTOR
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1. ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE−ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
2. ANODE
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
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