MMBF5485 [ONSEMI]
N 沟道 RF 晶体管;型号: | MMBF5485 |
厂家: | ONSEMI |
描述: | N 沟道 RF 晶体管 放大器 光电二极管 晶体管 |
文件: | 总9页 (文件大小:321K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
G
N-Channel RF Amplifier
D
MMBF5484, MMBF5485,
MMBF5486
S
NOTE: Source & Drain
are interchangeable
SOT−23
CASE 318−08
This device is designed primarily for electronic switching
applications such as low On Resistance analog switching. Sourced
from Process 50.
ABSOLUTE MAXIMUM RATINGS* (T = 25°C unless otherwise noted)
MARKING DIAGRAM
A
Symbol
Rating
Drain−Gate Voltage
Value
25
Unit
V
V
V
DG
GS
GF
6xM
Gate−Source Voltage
−25
V
1
I
Forward Gate Current
10
mA
°C
6x = Device Code (x = B, M, H)
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
J
stg
M
= Date Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*These rating are limiting values above which the serviceability of any
semiconductor device may be impaired.
1. These rating are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications
involving pulsed or low duty cycle operations.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBF5484
MMBF5484
MMBF5484
3000 Tape &
Reel
SOT−23
(Pb−Free)
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Max
*MMBF5484−5486
Symbol
Characteristic
Unit
P
D
Total Device Dissipation
Derate above 25°C
225
1.8
mW
mW/°C
R
Thermal Resistance, Junction
to Case
−
°C/W
q
JC
JA
R
Thermal Resistance, Junction
to Ambient
556
°C/W
q
*Device mounted on FR−4 PCB 1.6” x 1.6” x 0.06”.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
September, 2021 − Rev. 2
MMBF5486/D
MMBF5484, MMBF5485, MMBF5486
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
Gate−Source Breakdown Voltage
I
G
= −1.0 mA, V = 0
−25
−
−
V
(BR)GSS
DS
I
Gate Reverse Current
V
GS
V
GS
= −20 V, V = 0
−
−
−
−
−1.0
−0.2
nA
mA
GSS
DS
= −20 V, V = 0, T = 100°C
DS
A
V
Gate−Source Cutoff Voltage
V
DS
V
DS
V
DS
= 15 V, I = 10 nA
5484
5485
5486
−0.3
−0.5
−2.0
−
−
−
−3.0
−4.0
−6.0
V
V
V
GS(off)
D
ON CHARACTERISTICS
Zero−Gate Voltage Drain Current*
I
= 15 V, V = 0
5484
5485
5486
1.0
4.0
8.0
−
−
−
5.0
10
20
mA
mA
mA
DSS
GS
SMALL SIGNAL CHARACTERISTICS
g
fs
Forward Transfer Conductance
= 15 V, V = 0, f = 1.0 kHz
5484
5485
5486
3000
3500
4000
−
−
−
6000
7000
8000
mmhos
mmhos
mmhos
GS
Re y
Input Conductance
V
V
= 15 V, V = 0, f = 100 MHz
5484
−
−
−
−
100
mmhos
mmhos
( is)
DS
GS
= 15 V, V = 0, f = 400 kHz
5485 /
5486
1000
DS
GS
g
Output Conductance
Output Conductance
V
= 15 V, V = 0, f = 1.0 kHz
5484
5485
5486
−
−
−
−
−
−
50
60
75
mmhos
mmhos
mmhos
os
DS
GS
Re y
V
V
= 15 V, V = 0, f = 100 MHz
5484
−
−
−
−
75
mmhos
mmhos
( os)
DS
GS
= 15 V, V = 0, f = 400 MHz
5485 /
5486
100
DS
GS
Re y
Forward Transconductance
V
V
= 15 V, V = 0, f = 100 MHz
5484
2500
−
−
mmhos
( fs)
DS
GS
= 15 V, V = 0, f = 400 MHz
5485
5486
3000
3500
−
−
−
−
mmhos
mmhos
DS
GS
C
Input Capacitance
V
DS
V
DS
V
DS
V
DS
V
DS
V
DS
= 15 V, V = 0, f = 1.0 MHz
−
−
−
−
−
−
−
−
5.0
1.0
2.0
3.0
−
pF
pF
pF
dB
dB
dB
iss
rss
oss
GS
C
Reverse Transfer Capacitance
Output Capacitance
Noise Figure
= 15 V, V = 0, f = 1.0 MHz
GS
C
= 15 V, V = 0, f = 1.0 MHz
−
GS
NF
5484
−
= 15 V, R = 1.0 kW, f = 100 MHz
G
= 15 V, R = 1.0 kW, f = 400 MHz 5484
4.0
−
G
= 15 V, R = 1.0 kW, f = 100 MHz 5485 /
2.0
G
5486
V
DS
= 15 V, R = 1.0 kW, f = 400 MHz 5485 /
−
−
4.0
dB
G
5486
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
MMBF5484, MMBF5485, MMBF5486
TYPICAL CHARACTERISTICS
Figure 1. Transfer Characteristics
Figure 2. Channel Resistance vs. Temperature
Figure 3. Transconductance Characteristics
Figure 4. Common Drain−Source Characteristics
Figure 5. Output Conductance vs. Drain Current
Figure 6. Transconductance Parameter Interactions
www.onsemi.com
3
MMBF5484, MMBF5485, MMBF5486
TYPICAL CHARACTERISTICS (continued)
Figure 7. Transconductance vs. Drain Current
Figure 8. Noise Voltage vs. Frequency
Figure 9. Capacitance vs. Voltage
Figure 10. Noise Figure Frequency
www.onsemi.com
4
MMBF5484, MMBF5485, MMBF5486
COMMON SOURCE CHARACTERISTICS
Figure 11. Input Admittance
Figure 12. Output Admittance
Figure 13. Forward Transadmittance
Figure 14. Reverse Transadmittance
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5
MMBF5484, MMBF5485, MMBF5486
COMMON GATE CHARACTERISTICS
Figure 15. Input Admittance
Figure 16. Output Admittance
Figure 17. Forward Transadmittance
Figure 18. Reverse Transadmittance
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. COLLECTOR
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1. ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE−ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
2. ANODE
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
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For additional information, please contact your local Sales Representative at
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