MMBF5485 [ONSEMI]

N 沟道 RF 晶体管;
MMBF5485
型号: MMBF5485
厂家: ONSEMI    ONSEMI
描述:

N 沟道 RF 晶体管

放大器 光电二极管 晶体管
文件: 总9页 (文件大小:321K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
G
N-Channel RF Amplifier  
D
MMBF5484, MMBF5485,  
MMBF5486  
S
NOTE: Source & Drain  
are interchangeable  
SOT23  
CASE 31808  
This device is designed primarily for electronic switching  
applications such as low On Resistance analog switching. Sourced  
from Process 50.  
ABSOLUTE MAXIMUM RATINGS* (T = 25°C unless otherwise noted)  
MARKING DIAGRAM  
A
Symbol  
Rating  
DrainGate Voltage  
Value  
25  
Unit  
V
V
V
DG  
GS  
GF  
6xM  
GateSource Voltage  
25  
V
1
I
Forward Gate Current  
10  
mA  
°C  
6x = Device Code (x = B, M, H)  
T , T  
Operating and Storage Junction  
Temperature Range  
55 to +150  
J
stg  
M
= Date Code  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
*These rating are limiting values above which the serviceability of any  
semiconductor device may be impaired.  
1. These rating are based on a maximum junction temperature of 150°C.  
2. These are steady state limits. The factory should be consulted on applications  
involving pulsed or low duty cycle operations.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBF5484  
MMBF5484  
MMBF5484  
3000 Tape &  
Reel  
SOT23  
(PbFree)  
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Max  
*MMBF54845486  
Symbol  
Characteristic  
Unit  
P
D
Total Device Dissipation  
Derate above 25°C  
225  
1.8  
mW  
mW/°C  
R
Thermal Resistance, Junction  
to Case  
°C/W  
q
JC  
JA  
R
Thermal Resistance, Junction  
to Ambient  
556  
°C/W  
q
*Device mounted on FR4 PCB 1.6” x 1.6” x 0.06”.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
September, 2021 Rev. 2  
MMBF5486/D  
MMBF5484, MMBF5485, MMBF5486  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Symbol  
Parameter  
Test Condition  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
V
GateSource Breakdown Voltage  
I
G
= 1.0 mA, V = 0  
25  
V
(BR)GSS  
DS  
I
Gate Reverse Current  
V
GS  
V
GS  
= 20 V, V = 0  
1.0  
0.2  
nA  
mA  
GSS  
DS  
= 20 V, V = 0, T = 100°C  
DS  
A
V
GateSource Cutoff Voltage  
V
DS  
V
DS  
V
DS  
= 15 V, I = 10 nA  
5484  
5485  
5486  
0.3  
0.5  
2.0  
3.0  
4.0  
6.0  
V
V
V
GS(off)  
D
ON CHARACTERISTICS  
ZeroGate Voltage Drain Current*  
I
= 15 V, V = 0  
5484  
5485  
5486  
1.0  
4.0  
8.0  
5.0  
10  
20  
mA  
mA  
mA  
DSS  
GS  
SMALL SIGNAL CHARACTERISTICS  
g
fs  
Forward Transfer Conductance  
= 15 V, V = 0, f = 1.0 kHz  
5484  
5485  
5486  
3000  
3500  
4000  
6000  
7000  
8000  
mmhos  
mmhos  
mmhos  
GS  
Re y  
Input Conductance  
V
V
= 15 V, V = 0, f = 100 MHz  
5484  
100  
mmhos  
mmhos  
( is)  
DS  
GS  
= 15 V, V = 0, f = 400 kHz  
5485 /  
5486  
1000  
DS  
GS  
g
Output Conductance  
Output Conductance  
V
= 15 V, V = 0, f = 1.0 kHz  
5484  
5485  
5486  
50  
60  
75  
mmhos  
mmhos  
mmhos  
os  
DS  
GS  
Re y  
V
V
= 15 V, V = 0, f = 100 MHz  
5484  
75  
mmhos  
mmhos  
( os)  
DS  
GS  
= 15 V, V = 0, f = 400 MHz  
5485 /  
5486  
100  
DS  
GS  
Re y  
Forward Transconductance  
V
V
= 15 V, V = 0, f = 100 MHz  
5484  
2500  
mmhos  
( fs)  
DS  
GS  
= 15 V, V = 0, f = 400 MHz  
5485  
5486  
3000  
3500  
mmhos  
mmhos  
DS  
GS  
C
Input Capacitance  
V
DS  
V
DS  
V
DS  
V
DS  
V
DS  
V
DS  
= 15 V, V = 0, f = 1.0 MHz  
5.0  
1.0  
2.0  
3.0  
pF  
pF  
pF  
dB  
dB  
dB  
iss  
rss  
oss  
GS  
C
Reverse Transfer Capacitance  
Output Capacitance  
Noise Figure  
= 15 V, V = 0, f = 1.0 MHz  
GS  
C
= 15 V, V = 0, f = 1.0 MHz  
GS  
NF  
5484  
= 15 V, R = 1.0 kW, f = 100 MHz  
G
= 15 V, R = 1.0 kW, f = 400 MHz 5484  
4.0  
G
= 15 V, R = 1.0 kW, f = 100 MHz 5485 /  
2.0  
G
5486  
V
DS  
= 15 V, R = 1.0 kW, f = 400 MHz 5485 /  
4.0  
dB  
G
5486  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
2
MMBF5484, MMBF5485, MMBF5486  
TYPICAL CHARACTERISTICS  
Figure 1. Transfer Characteristics  
Figure 2. Channel Resistance vs. Temperature  
Figure 3. Transconductance Characteristics  
Figure 4. Common DrainSource Characteristics  
Figure 5. Output Conductance vs. Drain Current  
Figure 6. Transconductance Parameter Interactions  
www.onsemi.com  
3
MMBF5484, MMBF5485, MMBF5486  
TYPICAL CHARACTERISTICS (continued)  
Figure 7. Transconductance vs. Drain Current  
Figure 8. Noise Voltage vs. Frequency  
Figure 9. Capacitance vs. Voltage  
Figure 10. Noise Figure Frequency  
www.onsemi.com  
4
MMBF5484, MMBF5485, MMBF5486  
COMMON SOURCE CHARACTERISTICS  
Figure 11. Input Admittance  
Figure 12. Output Admittance  
Figure 13. Forward Transadmittance  
Figure 14. Reverse Transadmittance  
www.onsemi.com  
5
MMBF5484, MMBF5485, MMBF5486  
COMMON GATE CHARACTERISTICS  
Figure 15. Input Admittance  
Figure 16. Output Admittance  
Figure 17. Forward Transadmittance  
Figure 18. Reverse Transadmittance  
www.onsemi.com  
6
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOT23 (TO236)  
CASE 318  
ISSUE AT  
DATE 01 MAR 2023  
SCALE 4:1  
GENERIC  
MARKING DIAGRAM*  
XXXMG  
G
1
XXX = Specific Device Code  
M
= Date Code  
G
= PbFree Package  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
STYLES ON PAGE 2  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42226B  
SOT23 (TO236)  
PAGE 1 OF 2  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOT23 (TO236)  
CASE 318  
ISSUE AT  
DATE 01 MAR 2023  
STYLE 1 THRU 5:  
CANCELLED  
STYLE 6:  
STYLE 7:  
PIN 1. EMITTER  
2. BASE  
STYLE 8:  
PIN 1. BASE  
PIN 1. ANODE  
2. EMITTER  
3. COLLECTOR  
2. NO CONNECTION  
3. CATHODE  
3. COLLECTOR  
STYLE 9:  
PIN 1. ANODE  
2. ANODE  
STYLE 10:  
STYLE 11:  
PIN 1. ANODE  
2. CATHODE  
STYLE 12:  
STYLE 13:  
PIN 1. SOURCE  
2. DRAIN  
STYLE 14:  
PIN 1. CATHODE  
2. GATE  
PIN 1. DRAIN  
2. SOURCE  
3. GATE  
PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
3. CATHODE  
3. CATHODEANODE  
3. GATE  
3. ANODE  
STYLE 15:  
STYLE 16:  
STYLE 17:  
PIN 1. NO CONNECTION  
2. ANODE  
STYLE 18:  
STYLE 19:  
STYLE 20:  
PIN 1. CATHODE  
2. ANODE  
PIN 1. GATE  
2. CATHODE  
3. ANODE  
PIN 1. ANODE  
2. CATHODE  
3. CATHODE  
PIN 1. NO CONNECTION PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
2. ANODE  
3. CATHODEANODE  
3. CATHODE  
3. GATE  
STYLE 21:  
STYLE 22:  
STYLE 23:  
PIN 1. ANODE  
2. ANODE  
STYLE 24:  
STYLE 25:  
STYLE 26:  
PIN 1. GATE  
2. SOURCE  
3. DRAIN  
PIN 1. RETURN  
2. OUTPUT  
3. INPUT  
PIN 1. GATE  
2. DRAIN  
PIN 1. ANODE  
2. CATHODE  
3. GATE  
PIN 1. CATHODE  
2. ANODE  
3. SOURCE  
3. NO CONNECTION  
3. CATHODE  
STYLE 27:  
STYLE 28:  
PIN 1. CATHODE  
2. CATHODE  
3. CATHODE  
PIN 1. ANODE  
2. ANODE  
3. ANODE  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42226B  
SOT23 (TO236)  
PAGE 2 OF 2  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technicaldocumentation  
onsemi Website: www.onsemi.com  
ONLINE SUPPORT: www.onsemi.com/support  
For additional information, please contact your local Sales Representative at  
www.onsemi.com/support/sales  

相关型号:

MMBF5485-HIGH

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AA
TI

MMBF5485-NL

Transistor
FAIRCHILD

MMBF5485D87Z

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET
FAIRCHILD

MMBF5485L99Z

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET, TO-236AB
TI

MMBF5485L99Z

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET
FAIRCHILD

MMBF5485S62Z

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET
FAIRCHILD

MMBF5486

SFET RF,VHF, UHF, Amplitiers
FAIRCHILD

MMBF5486

N 沟道 RF 晶体管
ONSEMI

MMBF5486-HIGH

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AA
TI

MMBF5486D87Z

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET, TO-236AB
TI

MMBF5486L

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB, CASE 318-07, 3 PIN
MOTOROLA

MMBF5486L99Z

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET
FAIRCHILD