MMBFJ108 [ONSEMI]
N 沟道开关;
| 型号： | MMBFJ108 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道开关 开关 PC 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：441K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-Channel JFET
J109, MMBFJ108
Features
• This Device is Designed for Digital Switching Applications where
Very Low On Resistance is Mandatory
• Sourced from Process 58
www.onsemi.com
• These are Pb−Free Devices
MAXIMUM RATINGS (T = 25°C unless otherwise specified) (Notes 1, 2)
A
Symbol
Parameter
Drain−Gate Voltage
Value
25
Unit
V
V
V
DG
GS
GF
Gate−Source Voltage
−25
V
1
I
Forward Gate Current
10
mA
°C
TO−92 3 4.825x4.76
T , T
Operating and Storage Junction
Temperature Range
−55 to 150
J
STG
CASE 135AN
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady−state limits. ON Semiconductor should be consulted on
applications involving pulsed or low−duty−cycle operations.
1
THERMAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
TO−92 3 4.83x4.76
LEADFORMED
CASE 135AR
Max
J109
(Note 3)
MMBFJ108
(Note 4)
Symbol
Parameter
Unit
mW
P
D
Total Device Dissipation
Derate Above 25°C
625
5.0
350
2.8
−
3
mW/°C
°C/W
1
R
Thermal Resistance,
Junction−to−Case
125
q
JC
JA
2
SOT−23/SUPERSOTt−23,
R
Thermal Resistance,
Junction−to−Ambient
200
357
°C/W
q
3 LEAD, 1.4x2.9
CASE 527AG
3. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)
with minimum land pattern size.
1. Drain, 2. Source, 3. Gate
4. Device mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for
2
the collector lead minimum 6 cm .
MARKING DIAGRAM
$Y&Z&3&K
J109
$Y&Z&3
J109
&Y
I8 &G
J109
J109−D26Z
MMBFJ108
J109, I8 = Specific Device Code
$Y
&Y
&G
&Z
&3
&K
= ON Semiconductor Logo
= Year Coding
= Weekly Date Code
= Assembly Plant Code
= Date Code Format
= Lot Run Traceability Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
December, 2020 − Rev. 4
J109/D
J109, MMBFJ108
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Max
Unit
OFF CHARACTERISTICS
V
Gate−Source Breakdown Voltage
I
= −10 mA, V = 0
−25
−
−
V
(BR)GSS
G
DS
I
Gate Reverse Current
V
V
V
= −15 V, V = 0
−3.0
−200
−10.0
−6.0
nA
GSS
GS
GS
DS
DS
= −15 V, V = 0, T = 100°C
−
DS
A
V
(off)
Gate−Source Cut−Off Voltage
= 15 V, I = 10 nA
MMBFJ108
J109
−3.0
−2.0
V
GS
D
ON CHARACTERISTICS
I
Zero−Gate Voltage Drain Current (Note 5)
V
V
= 15 V, V = 0
MMBFJ108
J109
80
40
−
−
−
mA
DSS
DS
GS
r
(on)
Drain−Source On Resistance
≤ 0.1 V, V = 0
MMBFJ108
J109
8.0
12
W
DS
DS
GS
−
SMALL SIGNAL CHARACTERISTICS
C (on)
dg
C (off)
sg
Drain−Gate & Source−Gate On Capacitance
V
DS
= 0, V = 0, f = 1.0 MHz
−
85
pF
GS
C (off)
dg
C (off)
sg
Drain−Gate Off Capacitance
Source−Gate Off Capacitance
V
V
= 0, V = −10 V, f = 1.0 MHz
−
−
15
15
pF
pF
DS
GS
= 0, V = −10 V, f = 1.0 MHz
DS
GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
TYPICAL PERFORMANCE CHARACTERISTICS
300
V
= 10 mV
GS
Unit with Typical
V
= 500 mV
= 1.0 V
GS
V
(off) = −7.8 V
GS
V
V
V
V
T
A
= 25°C
GS
GS
GS
GS
250
200
150
100
50
= 1.5 V
= 2.0 V
= 2.5 V
= 3.0 V
V
GS
V
= 3.5 V
= 4.0 V
= 4.5 V
GS
V
GS
GS
V
V
= 5.0 V
GS
V
= 5.5 V
GS
V
= 6.5 V
GS
V
V
= 6.0 V
= 7.0 V
GS
GS
0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
V
DS
, DRAIN SOURCE VOLTAGE (V)
Figure 1. Common Drain−Source, MMBFJ108
www.onsemi.com
2
J109, MMBFJ108
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
200
180
160
140
120
100
80
V
= −0.01 V
GS
−0.5 V
−1.0 V
−1.5 V
−2.0 V
−2.5 V
−3.5 V
60
40
Unit with Typical
VGS(off) = −4.8 V
20
T
A
= 25°C
0
0
2
4
6
8
10
12
14
16
V
DS
, DRAIN SOURCE VOLTAGE (V)
Figure 2. Common Drain−Source,MMBFJ108, J109
250
200
150
100
50
Unit with Typical
VGS(off) = −2.9 V
T
A
= 25°C
V
= −0.1 V
GS
−0.5 V
−1.0 V
−1.5 V
−2.0 V
3
0
0
1
2
4
5
6
7
8
9
10
11
12
13
14
15
V
DS
, DRAIN SOURCE VOLTAGE (V)
Figure 3. Common Drain−Source, J109
www.onsemi.com
3
J109, MMBFJ108
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1000
100
10
1
V
V
V
= 0 PULSED
= 5 V
V
I
V
= 100 mV
= 100 mA
GS
GS
DS
D
@ V = 15 V, I = 10 nA
@ V = 15 V, I = 10 nA
GS(off)
DS
D
GS(off)
DS
D
100
10
−1
−1
−10
100
25
−10
V
, GATE CUTOFF VOLTAGE (V)
V
, GATE CUTOFF VOLTAGE (V)
GS(off)
GS(off)
Figure 4. Drain ON Resistance
Figure 5. Drain Current vs.
Gate−Source Cut−Off Voltage
100
50
10
8
V
= 10 V
T = 25°C
A
DG
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
V
V
= 1.5 V
= −12 V
DD
= 0.21 @ f ≥ 1.0 kHz
GS
6
I
D
= 30 mA
10
5
4
I
D
= 10 mA
I
D
= 1.0 mA
I
= 10 mA
D
2
1
0
0.01
0.03
0.1
0.5
1
2
10
0
−2
−4
−6
−8
−10
f, FREQUENCY (Hz)
V
GS(off)
, GATE CUTOFF VOLTAGE (V)
Figure 6. Noise Voltage vs. Frequency
Figure 7. Switching Turn−On Time vs.
Gate−Source Cut−Off Voltage
100
50
40
30
20
10
0
VGS = 0 V
V
V
= −8.5 V
= −5.5 V
GS(off)
GS(off)
T
A
= 125°C
25°C
VGS(off) = −2.9 V
V
= −3.5 V
10
GS(off)
−55°C
VGS(off) = −4.0 V
T
= 25°C
= 1.5 V
= −12 V
A
V
V
DD
GS
1
1
10
100
0
5
10
15
20
I , DRAIN CURRENT (mA)
D
I , DRAIN CURRENT (mA)
D
Figure 8. Switching Turn−On Time vs. Drain Current
Figure 9. On Resistance vs. Drain Current
www.onsemi.com
4
J109, MMBFJ108
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1000
100
10
100
T
= 25°C
T
= 25°C
A
A
f = 1.0 kHz
V
V
f = 1.0 kHz
VGS(off) = −4.0 V
= 10 V
GS
GS(off)
= −3.0 V @ V = 15 V, I = 10 nA
DS
D
10
1
0,1
1
0,1
1
10
0,1
1
10
I , DRAIN CURRENT (mA)
D
I , DRAIN CURRENT (mA)
D
Figure 10. Output Conductance vs. Drain Current
Figure 11. Output Conductance vs. Drain Current
700
600
TO−92
500
SUPERSOT−3
400
300
200
100
0
0
20
40
60
80
100
120
140
160
T, AMBIENT TEMPERATURE (°C)
Figure 12. Power Dissipation vs. Ambient Temperature
ORDERING INFORMATION
†
Part Number
Top Mark
Package
Shipping
J109
J109
TO−92 3L
(Pb−Free)
10000 Units / Bulk
2000 / Tape & Reel
3000 / Tape & Reel
J109−D26Z
J109
I8
TO−92 3L
(Pb−Free)
MMBFJ108
SSOT 3L
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
SUPERSOT is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.825x4.76
CASE 135AN
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13880G
TO−92 3 4.825X4.76
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.83x4.76 LEADFORMED
CASE 135AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
TO−92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX = Specific Device Code
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXMG
G
= Pb−Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
MMBFJ108D87Z
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET
FAIRCHILD
MMBFJ108_NL
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, SUPERSOT-3
FAIRCHILD
MMBFJ111L99Z
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET
FAIRCHILD
MMBFJ111_NL
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET,
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明