MMBFJ175 [ONSEMI]
P沟道开关;
| 型号： | MMBFJ175 |
| 厂家： | 
ONSEMI |
| 描述： | P沟道开关 开关 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：401K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177
P-Channel Switch
Description
This device is designed for low-level analog switching
sample-and-hold circuits and chopper-stabilized
amplifiers. Sourced from process 88.
G
TO-92
1. Drain
S
2. Gate
3. Source
SOT-23
D
1
1
2
2
Mark: 6W / 6X / 6Y
Note: Source & drain are interchangeable.
3
3
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Figure 1. J175 / J176 Device Package
Figure 2. MMBFJ175 / 176 / 177 Device Package
Ordering Information
Part Number
Marking
J175
J176
6W
Package
TO-92 3L
TO-92 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel
Ammo
J175-D26Z
J176-D74Z
MMBFJ175
MMBFJ176
MMBFJ177
Tape and Reel
Tape and Reel
Tape and Reel
6X
6Y
©1997 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Publication Order Number:
J175/D
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VDG
Parameter
Value
Unit
V
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
-30
30
VGS
V
IGF
50
mA
°C
TJ, TSTG Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
-55 to + 150
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Max.
MMBFJ175 /
Symbol
Parameter
Unit
J175 / J176 (3) MMBFJ176 /
MMBFJ177 (3)
Total Device Dissipation
350
2.8
225
1.8
mW
mW/°C
°C/W
PD
Derate Above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
125
357
556
°C/W
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
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2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage
IG = 1.0 μA, VDS = 0
VGS = 20 V, VDS = 0
30
V
IGSS
Gate Reverse Current
1.0
6.0
nA
J175 /
MMBFJ175
3.0
VGS(off)
Gate-Source Cut-Off Voltage
VDS = -15 V, ID = -10 nA J176 /
MMBFJ176
V
1.0
0.8
4.0
2.5
MMBFJ177
On Characteristics
J175 /
MMBFJ175
-7.0
-60.0
IDSS
Zero-Gate Voltage Drain Current(4) VDS = -15 V, IGS = 0
J176 /
MMBFJ176
mA
-2.0
-1.5
-25.0
-20.0
125
MMBFJ177
J175 /
MMBFJ175
rDS(on)
Drain-Source On Resistance
VDS ≤ 0.1 V, VGS = 0
J176 /
MMBFJ176
Ω
250
300
MMBFJ177
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
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3
Typical Performance Characteristics
-20
100
50
1,000
500
T
V
= 25°C
GS(off)
A
TYP
= 4.5 V
0.5 V
1.0 V
-16
-12
-8
I DSS
V GS = 0 V
rDS
g
fs
10
5
100
50
1.5 V
2.0 V
IDSS , gfs @ VDS = 15V,
VGS= 0 PULSED
-4
3.5 V
3.0 V
rDS @ -100 mV, VGS = 0
VGS(off) @ VDS = - 15V,
2.5 V
I
= - 1.0 A
μ
D
1
10
0
1
2
5
10
0
-1
-2
-3
-4
-5
VGS (OFF) - GATE CUTOFF VOLTAGE (V)
VDS - DRAIN-SOURCE VOLTAGE (V)
Figure 4. Parameter Interactions
Figure 3. Common Drain-Source
16
-32
-24
-16
-8
V DS = - 15 V
V DS = - 15 V
V
= - 4.5 V
GS(off)
- 55°C
V
= - 4.5 V
GS(off)
- 55°C
12
8
25°C
25°C
125°C
125°C
V
= 2.5 V
GS(off)
- 55°C
25°C
V
= 2.5 V
GS(off)
- 55°C
25°C
125°C
125°C
4
0
0
0
1
2
3
4
0
1
2
3
4
VGS - GATE-SOURCE VOLTAGE (V)
VGS - GATE-SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
Figure 5. Transfer Characteristics
1000
100
10
100
50
f = 1.0 kHz
V
@ 5.0V, 10 μA
GS(off)
-5.0V
-10V
-5.0V
rDS
20
10
5
rDS
=
VGS
-10V
______
1 -
-20V
V
= - 4.5V
-20V
GS(off)
VGS(off)
V
= - 2.5V
GS(off)
2
1
1
0
0.2
0.4
0.6
0.8
1
_ 0.01
_0.1
_1
_10
VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V)
I D - DRAIN CURRENT (mA)
Figure 8. Output Conductance vs. Drain Current
Figure 7. Normalized Drain Resistance vs.
Bias Voltage
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4
Typical Performance Characteristics (Continued)
100
10
f
= 0.1 - 1.0 MHz
V
= 2.5V
GS(off)
25°C
5
V
= 6.0V
GS(off)
- 55°C
25°C
125°C
C
(V
= -15V)
DS
is
C
10
5
1
0.5
(V
= -15V)
DS
rs
V
= -15V
DG
f = 1.0 kHz
0.1
_ 0.1
_1
_10
_ 100
1
0
4
8
12
16
20
ID - DRAIN CURRENT (mA)
VGS - GATE-SOURCE VOLTAGE (V)
Figure 10. Capacitance vs. Voltage
Figure 9. Transconductance vs. Drain Current
100
50
1000
500
V
V
= -100 mV
DS
GS
V
V
V
= 2.5V
= 4.5V
= 8.0V
GS(off)
GS(off)
GS(off)
= 0
I
= - 0.2 mA
D
10
5
I
= 5.0 mA
D
100
50
V
= - 15V
DG
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.2f @ f ≥ 1.0 kHz
10
1
-50
0
50
100
150
0.01
0.1
1
10
100
T A - AMBIENT TEMPERATURE (oC)
f - FREQUENCY (kHz)
Figure 12. Channel Resistance vs. Temperature
Figure 11. Noise Voltage vs. Frequency
350
300
TO-92
250
200
150
SOT-23
100
50
0
0
25
50
75
100
125
150
TEMPERATURE ( oC)
Figure 13. Power Dissipation vs.
Ambient Temperature
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5
Physical Dimensions
Figure 14. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form
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6
Physical Dimensions (Continued)
0.95
2.92 0.20
3
1.40
+0.20
-0.15
1.30
2.20
1.00
1
2
0.60
0.37
(0.29)
0.95
0.20
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
(0.93)
0.10
0.00
0.10
C
C
2.40 0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
0.23
0.08
0.25
0.20 MIN
(0.55)
E) DRAWING FILE NAME: MA03DREV10
SEATING
PLANE
SCALE: 2X
Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
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7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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