MMBT200 [ONSEMI]
PNP通用放大器;
| 型号： | MMBT200 |
| 厂家： | 
ONSEMI |
| 描述： | PNP通用放大器 放大器 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：425K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
PN200A / MMBT200
PNP General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier
applications at collector currents to 300 mA. Sourced
from Process 68.
C
E
TO-92
EB C
B
SOT-23
Figure 1. PN200A Device Package
Figure 2. MMBT200 Device Package
Ordering Information
Part Number
PN200A
Marking
PN200A
N2
Package
TO-92 3L
SOT-23 3L
Packing Method
Bulk
MMBT200
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
-45
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
-60
V
-6
V
Collector Current - Continuous
-500
mA
°C
TJ, TSTG Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
-55 to +150
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty cycle operations.
Publication Order Number:
PN200A/D
© 1997 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Max.
MMBT200(4)
Symbol
Parameter
Unit
PN200A(3)
625
Total Device Dissipation
350
2.8
mW
mW/°C
°C/W
PD
Derate Above 25°C
5.0
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
357
°C/W
Notes:
3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
Off Characteristics
BVCBO
Collector-Base Breakdown Voltage IC = -10 μA, IB = 0
-60
-45
-6.0
V
V
Collector-Emitter Breakdown
IC = -1.0 mA, IE = 0
Voltage(5)
BVCEO
BVEBO
ICBO
Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0
V
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
VCB = -50 V, IE = 0
VCE = -40 V, IE = 0
VEB = -4.0 V, IC = 0
-50
-50
-50
nA
nA
nA
ICES
IEBO
On Characteristics
MMBT200
PN200A
80
IC = -100 μA,
VCE = -1.0 V
240
100
300
MMBT200
PN200A
450
600
IC = -10 mA,
VCE = -1.0 V
hFE
DC Current Gain
IC = -100 mA,
VCE = -1.0 V(5)
PN200A
100
MMBT200
PN200A
100
100
350
IC = -150 mA,
V
CE = -5.0 V(5)
IC = -10 mA, IB = -1.0 mA
-0.2
-0.4
Collector-Emitter Saturation
Voltage
VCE(sat)
VBE(sat)
V
V
IC = -200 mA, IB = -20 mA(5)
IC = -10 mA, IB = -1.0 mA
IC = -200 mA, IB = -20 mA(5)
-0.85
-1.00
Base-Emitter Saturation
Voltage
Small Signal Characteristics
fT
Current Gain - Bandwidth Product VCE = -20 V, IC = -20 mA,
250
MHz
pF
Cob
Output Capacitance
VCB = -10 V, f = -1.0 MHz
6.0
4.0
IC = -100 μA, VCE = -5.0 V,
NF
Noise Figure
dB
R
G = 2.0 kΩ, f = 1.0 kHz
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
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2
Typical Performance Characteristics
0.3
0.25
0.2
500
V
= 5V
CE
β = 10
125 °C
400
300
200
100
0
0.15
0.1
25 °C
25 °C
- 40 °C
0.05
0
125 °C
- 40 °C
100
0.1
1
10
300
0.01
0.1
1
10
100
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Figure 3. Typical Pulsed Current Gain
vs. Collector Current
Figure 4. Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1
β = 10
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
- 40°C
25 °C
- 40 °C
125 °C
25 °C
125 °C
V
= 5V
CE
0.1
1
10
100
300
0.1
1
10
10 0 20 0
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Figure 6. Base-Emitter On Voltage vs.
Collector Current
Figure 5. Base-Emitter Saturation Voltage
vs. Collector Current
100
95
90
85
80
75
70
V
= 50V
CB
10
1
0.1
0.01
0.1
1
10
100
1000
25
50
75
100
125
RESISTANCE (k
)
Ω
TA - AMBIE NT TEMP ERATURE ( C)
°
Figure 8. Collector-Emitter Breakdown Voltage with
Resistance Between Emitter-Base
Figure 7. Collector Cut-Off Current vs.
Ambient Temperature
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3
Typical Performance Characteristics (Continued)
100
4
f = 1.0 MHz
Ta = 25°C
3
10
Ic =
100 uA
300 mA
50 mA
2
1
0
Cib
Cob
0.1
1
10
100
100
300
700
2000 4000
V
- COLLECTOR VOLTAGE (V)
CE
I
- BASE CURRENT (uA)
B
Figure 10. Input and Output Capacitance vs.
Reverse Voltage
Figure 9. Collector Saturation Region
40
30
20
10
0
300
270
V
= 5V
ce
t
s
240
210
180
150
120
90
60
30
0
IB1 = IB2 = Ic / 10
V
= 10 V
cc
t
f
t
r
t
d
10
20
30
50
100
200 300
1
10
20
50
100 150
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Figure 12. Switching Times vs. Collector Current
Figure 11. Gain Bandwidth Product vs.
Collector Current
700
600
500
400
300
200
100
0
TO-92
SOT-23
0
25
50
75
100
125
150
TEMPERATURE (°C)
Figure 13. Power Dissipation vs.
Ambient Temperature
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4
Physical Dimensions
TO-92
D
Figure 14. 3-LEAD, TO-92, MOLDED, STD STRAGHIT LEAD (NO EOL CODE) (ACTIVE)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
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5
Physical Dimensions (Continued)
SOT-23
0.95
2.92 0.20
3
1.40
+0.20
1.30
2.20
1.00
-0.15
1
2
0.60
0.37
(0.29)
0.95
0.20
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
(0.93)
0.10
0.00
0.10
C
C
2.40 0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
0.23
0.08
0.25
0.20 MIN
(0.55)
E) DRAWING FILE NAME: MA03DREV10
SEATING
PLANE
SCALE: 2X
Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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