MMBT3906SL [ONSEMI]
PNP外延硅晶体管;型号: | MMBT3906SL |
厂家: | ONSEMI |
描述: | PNP外延硅晶体管 晶体管 |
文件: | 总7页 (文件大小:338K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
June 2015
MMBT3906SL
PNP Epitaxial Silicon Transistor
Features
• General-Purpose Amplifier Transistor
• Ultra Small Surface Mount Package for All Types (Max. 0.43mm Tall)
• Suitable for General Switching and Amplification
• Well Suited for Portable Application
• As Complementary type, NPN MMBT3904SL is Recommended.
• Pb Free
COLLECTOR
3
C
1
BASE
E
B
2
Marking : AB
SOT-923F
EMITTER
Ordering Information
Part Number
Top Mark
Package
Packing Method
Tape and Reel
MMBT3906SL
AB
SOT-923F 3L
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-40
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-40
V
-5
V
-200
mA
°C
°C
TJ
Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Note:
1. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2008 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.4
www.fairchildsemi.com
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Value
227
Unit
mW
Power Dissipation, by RθJA
Derate Above 25°C
1.81
550
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient(2)
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage IC = -1 mA, IB = 0
Parameter
Conditions
Min.
-40
-40
-5
Max.
Unit
V
IC = -10 μA, IE = 0
V
BVEBO Emitter-Base Breakdown Voltage
IE = -10 μA, IC = 0
V
ICEX
Collector Cut-Off Current
VCE = -30 V, VEB(OFF) = -0.3 V
VCE = -1.0 V, IC = -0.1 mA
VCE = -1.0 V, IC = -1 mA
VCE = -1.0 V, IC = -10 mA
VCE = -1.0 V, IC = -50 mA
VCE = -1.0 V, IC = -100 mA
IC = -10 mA, IB = -1.0 mA
-50
nA
60
80
hFE
DC Current Gain
100
60
300
30
-0.25
-0.40
-0.85
-0.95
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
V
I
C = -50 mA, IB = -5.0 mA
IC = -10 mA, IB = -1.0 mA
C = -50 mA, IB = -5.0 mA
-0.65
250
V
I
VCE = -20 V, IC = -10 mA,
f = 100 MHz
fT
Current Gain-Bandwidth Product
MHz
Cob
Cib
td
Output Capacitance
Input Capacitance
Delay Time
VCB = -5 V, IE = 0, f = 1 MHz
VEB = -0.5 V, IC = 0, f = 1 MHz
7.0
15
pF
pF
ns
ns
ns
ns
35
tr
Rise Time
35
VCC = -3 V, IC = -10 mA,
IB1 = -IB2 = -1 mA
ts
Storage Time
Fall Time
225
75
tf
Note:
3. DC Item are tested by pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MMBT3906SL Rev. 1.4
2
Typical Performance Characteristics
1000
TJ=125 oC
Ic=10*Ib
TJ=75 oC
Vce=1V
TJ=25 oC
TJ=-25 oC
100
TJ=125 o
TJ=75 oC
C
TJ=25 o
C
C
100
TJ=-25 o
10
10
100
1
10
100
Collector Current, [mA]
Collector Current, [mA]
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
100
Ic=10*Ib
TJ=-25 o
C
TJ=25 o
C
1000
TJ=125 o
C
TJ=75 o
TJ=125 o
C
C
10
TJ=75 oC
TJ=25 oC
TJ=-25 o
C
1
100
10
10
20
30
40
100
Base-Collector Revere Voltage, [V]
Collector Current, [mA]
Figure 3. Base- Emitter Saturation Voltage
Figure 4. Collector- Base Leakage Current
12
300
250
200
150
100
50
f=1mhz
11
9
8
6
0
0
25
50
75
100
125
150
0
5
10
Ambient Temperature, Ta[oC]
Base- Collector Reverse Voltage, Vcb[V]
Figure 5. Collector- Base Capacitance
Figure 6. Power Derating
© 2008 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.4
www.fairchildsemi.com
3
Physical Dimensions
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Figure 7. 3-LEAD, SOT923F, 0.4 mm TALL, FLAT TERMINAL
© 2008 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.4
www.fairchildsemi.com
4
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
OPTOPLANAR®
AccuPower¥
AttitudeEngine™
Awinda®
F-PFS¥
®*
FRFET®
Global Power ResourceSM
GreenBridge¥
Green FPS¥
Green FPS¥ e-Series¥
Gmax¥
TinyBoost®
TinyBuck®
TinyCalc¥
TinyLogic®
TINYOPTO¥
TinyPower¥
TinyPWM¥
TinyWire¥
TranSiC¥
®
AX-CAP®*
Power Supply WebDesigner¥
PowerTrench®
PowerXS™
BitSiC¥
Build it Now¥
CorePLUS¥
CorePOWER¥
CROSSVOLT¥
CTL¥
Programmable Active Droop¥
GTO¥
IntelliMAX¥
QFET®
QS¥
ISOPLANAR¥
Making Small Speakers Sound Louder
and Better™
MegaBuck¥
MICROCOUPLER¥
MicroFET¥
Quiet Series¥
RapidConfigure¥
¥
Current Transfer Logic¥
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax¥
TriFault Detect¥
TRUECURRENT®*
μSerDes¥
Saving our world, 1mW/W/kW at a time™
SignalWise¥
SmartMax¥
ESBC¥
MicroPak¥
SMART START¥
Solutions for Your Success¥
SPM®
®
UHC®
MicroPak2¥
MillerDrive¥
MotionMax¥
MotionGrid®
Ultra FRFET¥
UniFET¥
VCX¥
VisualMax¥
VoltagePlus¥
XS™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series¥
FACT®
STEALTH¥
SuperFET®
MTi®
SuperSOT¥-3
MTx®
FAST®
SuperSOT¥-6
SuperSOT¥-8
SupreMOS®
MVN®
FastvCore¥
FETBench¥
FPS¥
mWSaver®
Xsens™
OptoHiT¥
❺
™
SyncFET¥
Sync-Lock™
OPTOLOGIC®
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
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Semiconductor reserves the right to make changes at any time without notice to improve design.
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changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Rev. I74
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www.fairchildsemi.com
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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