MMBT5087 [ONSEMI]
Low Noise Transistor; 低噪声晶体管
| 型号： | MMBT5087 |
| 厂家： | 
ONSEMI |
| 描述： | Low Noise Transistor |
| 文件： | 总8页 (文件大小：409K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MMBT5087LT1/D
SEMICONDUCTOR TECHNICAL DATA
COLLECTOR
3
PNP Silicon
Motorola Preferred Device
1
BASE
2
EMITTER
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
Value
–50
Unit
Vdc
1
2
V
CEO
V
CBO
V
EBO
Collector–Base Voltage
Emitter–Base Voltage
–50
Vdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
–3.0
–50
Vdc
Collector Current — Continuous
DEVICE MARKING
I
C
mAdc
MMBT5087LT1 = 2Q
THERMAL CHARACTERISTICS
Characteristic
(1)
Symbol
Max
Unit
Total Device Dissipation FR-5 Board
= 25°C
Derate above 25°C
P
D
225
mW
T
A
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R
θJA
P
D
(2)
Alumina Substrate,
T = 25°C
A
Derate above 25°C
2.4
417
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
T , T
–55 to +150
J
stg
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage
V
V
–50
–50
—
—
Vdc
Vdc
(BR)CEO
(I = –1.0 mAdc, I = 0)
C
B
Collector–Base Breakdown Voltage
(I = –100 µAdc, I = 0)
(BR)CBO
C
E
Collector Cutoff Current
I
nAdc
CBO
(V
CB
(V
CB
= –10 Vdc, I = 0)
—
—
–10
–50
E
= –35 Vdc, I = 0)
E
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
—
(I = –100 µAdc, V
= –5.0 Vdc)
= –5.0 Vdc)
= –5.0 Vdc)
250
250
250
800
—
—
C
CE
CE
CE
(I = –1.0 mAdc, V
C
(I = –10 mAdc, V
C
Collector–Emitter Saturation Voltage
(I = –10 mAdc, I = –1.0 mAdc)
V
V
—
–0.3
0.85
Vdc
Vdc
CE(sat)
C
B
Base–Emitter Saturation Voltage
(I = –10 mAdc, I = –1.0 mAdc)
—
BE(sat)
C
B
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
40
—
—
MHz
pF
T
(I = –500 µAdc, V
= –5.0 Vdc, f = 20 MHz)
C
CE
Output Capacitance
C
4.0
900
obo
(V
CB
= –5.0 Vdc, I = 0, f = 1.0 MHz)
E
Small–Signal Current Gain
h
250
—
fe
(I = –1.0 mAdc, V
C
= –5.0 Vdc, f = 1.0 kHz)
CE
Noise Figure
NF
dB
(I = –20 mAdc, V
(I = –100 µAdc, V
C
= –5.0 Vdc, R = 10 kΩ, f = 1.0 kHz)
—
—
2.0
2.0
C
CE
S
= –5.0 Vdc, R = 3.0 kΩ, f = 1.0 kHz)
S
CE
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL NOISE CHARACTERISTICS
(V
= –5.0 Vdc, T = 25°C)
CE
A
10
7.0
5.0
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
R
≈ 0
S
R
≈∞
S
I = 1.0 mA
C
I
= 10
µA
3.0
2.0
C
300
100
µA
30
100
300
µA
1.0
3.0
2.0
µA
0.7
0.5
µA
µA
1.0 mA
0.3
0.2
30
10
µ
A
A
µ
1.0
0.1
10
20
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
10
20
50
100 200
500
1.0 k 2.0 k
5.0 k 10 k
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(V
= –5.0 Vdc, T = 25°C)
CE
A
1.0 M
500 k
1.0 M
500 k
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
200 k
100 k
50 k
20 k
10 k
20 k
10 k
0.5 dB
0.5 dB
5.0 k
2.0 k
5.0 k
2.0 k
1.0 dB
1.0 dB
2.0 dB
2.0 dB
1.0 k
500
1.0 k
500
3.0 dB
5.0 dB
3.0 dB
200
100
200
100
5.0 dB
500 700 1.0 k
10
20 30
50 70 100
200 300
A)
500 700 1.0 k
10
20 30
50 70 100
200 300
I
, COLLECTOR CURRENT (
µ
I , COLLECTOR CURRENT (µ
C
A)
C
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
1.0 M
500 k
10 Hz to 15.7 kHz
200 k
100 k
Noise Figure is Defined as:
50 k
2
R
n S
2
1 2
2
e
n
4KTR
4KTR
I
S
20 k
10 k
NF
20 log
10
S
0.5 dB
e
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
n
5.0 k
2.0 k
I
n
1.0 dB
2.0 dB
–23
= Boltzman’s Constant (1.38 x 10
K
T
R
j/°K)
1.0 k
500
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
S
3.0 dB
5.0 dB
200
100
20
30
50 70 100
200 300
500 700 1.0 k
10
I
, COLLECTOR CURRENT (µA)
C
Figure 5. Wideband
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
TYPICAL STATIC CHARACTERISTICS
1.0
0.8
100
I
B
= 400 µA
T
= 25°C
T
= 25
°
C
A
A
PULSE WIDTH = 300
DUTY CYCLE 2.0%
µ
s
350 µA
≤
80
60
300 µA
250
200
µA
I
= 1.0 mA
10 mA
50 mA
100 mA
C
0.6
0.4
0.2
0
µA
150 µA
40
20
0
100
50
µA
µA
0.002 0.005 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
0
5.0
10
15
20
25
30
35
40
I
, BASE CURRENT (mA)
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
B
CE
Figure 6. Collector Saturation Region
Figure 7. Collector Characteristics
1.4
1.2
1.6
0.8
0
T
= 25°C
J
*APPLIES for I /I
C B
≤
h
/2
FE
1.0
0.8
0.6
0.4
25°C to 125°C
*
for V
CE(sat)
VC
–55°C to 25°C
V
@ I /I = 10
C B
BE(sat)
0.8
1.6
2.4
V
@ V = 1.0 V
CE
BE(on)
25°C to 125°C
–55°C to 25°C
for V
BE
0.2
0
VB
V
@ I /I = 10
C B
CE(sat)
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50 100
0.1
0.2
0.5
I
1.0
2.0
5.0
10
20
50
100
I
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
C
C
Figure 8. “On” Voltages
Figure 9. Temperature Coefficients
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL DYNAMIC CHARACTERISTICS
500
1000
V
I
= –3.0 V
/I = 10
= I
= 25°C
V
I
= 3.0 V
CC
C B
CC
/I = 10
700
500
300
200
C B
I
T
T
= 25°C
B1 B2
J
t
s
300
200
J
100
70
50
100
70
50
30
20
t
r
t
f
30
20
t
@ V
BE(off)
= 0.5 V
10
d
10
7.0
5.0
1.0
10
–1.0
2.0 3.0
5.0 7.0
20
30
50 70 100
–2.0 –3.0
–10
–20 –30
, COLLECTOR CURRENT (mA)
C
–100
–50 –70
–5.0 –7.0
I
, COLLECTOR CURRENT (mA)
I
C
Figure 10. Turn–On Time
Figure 11. Turn–Off Time
500
10
7.0
5.0
T
J
= 25°C
T
= 25°C
J
V
= 20 V
300
200
CE
C
ib
5.0 V
3.0
2.0
100
70
C
ob
50
1.0
0.05 0.1
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
0.2
0.5
V , REVERSE VOLTAGE (VOLTS)
R
1.0
2.0
5.0
10
20
50
I
, COLLECTOR CURRENT (mA)
C
Figure 12. Current–Gain — Bandwidth Product
Figure 13. Capacitance
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
FIGURE 16
1
0.05
DUTY CYCLE, D = t /t
1 2
P
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
(pk)
0.02
0.01
0.03
0.02
t
READ TIME AT t (SEE AN–569)
1
θ
(pk)
Z
T
= r(t)
•
R
SINGLE PULSE
θ
J(pk)
JA(t)
JA
t
2
– T = P
Z
θJA(t)
A
0.01
0.01 0.02
0.05 0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
100 k
50 k
t, TIME (ms)
Figure 14. Thermal Response
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
4
10
10
10
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
V
= 30 V
CC
A train of periodical power pulses can be represented by the model
as shown in Figure 16. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 14 was calculated for various duty cycles.
3
2
I
CEO
To find Z
steady state value R
, multiply the value obtained from Figure 14 by the
θJA(t)
.
1
θJA
10
10
I
CBO
Example:
AND
Dissipating 2.0 watts peak under the following conditions:
= 1.0 ms, t = 5.0 ms (D = 0.2)
I
@ V
= 3.0 V
0
CEX
BE(off)
t
1
2
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
–1
10
10
The peak rise in junction temperature is therefore
–2
∆T = r(t) x P
(pk)
x R
= 0.22 x 2.0 x 200 = 88°C.
θJA
–4
0
–2
0
0
+20 +40 +60 +80 +100 +120 +140 +160
T , JUNCTION TEMPERATURE ( C)
For more information, see AN–569.
°
J
Figure 15. Typical Collector Leakage Current
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
SOLDERING PRECAUTIONS
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
by T
, the maximum rated junction temperature of the
, the thermal resistance from the device junction to
J(max)
die, R
θJA
ambient, and the operating temperature, T . Using the
A
values provided on the data sheet for the SOT–23 package,
P
can be calculated as follows:
D
•
•
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
T
– T
A
J(max)
P
=
D
R
θJA
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
calculate the power dissipation of the device which in this
case is 225 milliwatts.
•
•
•
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
150°C – 25°C
556°C/W
P
=
= 225 milliwatts
D
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad . Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
•
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
7
PACKAGE DIMENSIONS
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
B
1
2
INCHES
MIN MAX
MILLIMETERS
DIM
A
B
C
D
G
H
J
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.60
1.02
2.50
0.60
V
G
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
C
K
L
S
H
J
D
V
K
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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MMBT5087LT1/D
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