MMBT5089LT3 [ONSEMI]
50mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, 3 PIN;
| 型号： | MMBT5089LT3 |
| 厂家： | 
ONSEMI |
| 描述： | 50mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, 3 PIN 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
MMBT5088LT1
MMBT5089LT1
Low Noise Transistors
NPN Silicon
MMBT5089LT1 is a Preferred Device
3
MAXIMUM RATINGS
1
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Symbol
5088LT1 5089LT1
Unit
Vdc
2
V
CEO
V
CBO
V
EBO
30
35
25
30
Vdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AF)
Emitter–Base Voltage
4.5
50
Vdc
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
COLLECTOR
3
Symbol
Max
Unit
1
(1)
Total Device Dissipation FR–5 Board
T = 25°C
A
P
D
225
mW
BASE
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
2
Thermal Resistance, Junction to Ambient
R
q
JA
EMITTER
Total Device Dissipation
P
D
(2)
Alumina Substrate, T = 25°C
A
Derate above 25°C
2.4
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
417
q
JA
T , T
J
–55 to +150
stg
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage
V
Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0)
MMBT5088
MMBT5089
30
25
—
—
C
B
Collector–Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
Vdc
nAdc
nAdc
(BR)CBO
MMBT5088
MMBT5089
35
30
—
—
C
E
Collector Cutoff Current
(V = 20 Vdc, I = 0)
I
CBO
MMBT5088
MMBT5089
—
—
50
50
CB
E
(V = 15 Vdc, I = 0)
CB
E
Emitter Cutoff Current
I
EBO
(V
EB(off)
(V
EB(off)
= 3.0 Vdc, I = 0)
MMBT5088
MMBT5089
—
—
50
100
C
= 4.5 Vdc, I = 0)
C
1. FR–5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
627
Publication Order Number:
March, 2001 – Rev. 1
MMBT5088LT1/D
MMBT5088LT1 MMBT5089LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
—
(I = 100 µAdc, V = 5.0 Vdc)
MMBT5088
MMBT5089
300
400
900
1200
C
CE
(I = 1.0 mAdc, V = 5.0 Vdc)
MMBT5088
MMBT5089
350
450
—
—
C
CE
(I = 10 mAdc, V = 5.0 Vdc)
MMBT5088
MMBT5089
300
400
—
—
C
CE
Collector–Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
V
Vdc
Vdc
CE(sat)
—
—
0.5
0.8
C
B
Base–Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
BE(sat)
C
B
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
MHz
pF
T
(I = 500 µAdc, V = 5.0 Vdc, f = 20 MHz)
50
—
—
—
4.0
10
C
CE
Collector–Base Capacitance
(V = 5.0 Vdc, I = 0, f = 1.0 MHz emitter guarded)
C
C
h
cb
eb
fe
CB
E
Emitter–Base Capacitance
(V = 0.5 Vdc, I = 0, f = 1.0 MHz collector guarded)
pF
EB
C
Small Signal Current Gain
—
(I = 1.0 mAdc, V = 5.0 Vdc, f = 1.0 kHz)
MMBT5088
MMBT5089
350
450
1400
1800
C
CE
Noise Figure
NF
dB
(I = 100 mAdc, V = 5.0 Vdc, R = 10 kΩ, f = 1.0 kHz)
MMBT5088
MMBT5089
—
—
3.0
2.0
C
CE
S
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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MMBT5088LT1 MMBT5089LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30
20
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
I
C
= 10 mA
R ≈ 0
S
R ≈ 0
S
f = 10 Hz
10 kHz
3.0 mA
1.0 mA
10
7.0
5.0
10
7.0
5.0
100 Hz
1.0 kHz
300 µA
100 kHz
5.0
3.0
3.0
0.01 0.02
10 20 50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk 50Ăk 100Ăk
f, FREQUENCY (Hz)
0.05 0.1
0.2
0.5 1.0
2.0
10
I , COLLECTOR CURRENT (mA)
C
Figure 2. Effects of Frequency
Figure 3. Effects of Collector Current
10
20
16
BANDWIDTH = 1.0 Hz
7.0
5.0
I
C
= 10 mA
3.0
2.0
BANDWIDTH = 10 Hz to 15.7 kHz
3.0 mA
1.0 mA
12
8.0
4.0
0
1.0
0.7
0.5
I
C
= 1.0 mA
500 µA
100 µA
10 µA
300 µA
100 µA
30 µA
0.3
0.2
10 µA
R ≈ 0
S
0.1
10 20 50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk 50Ăk 100Ăk
f, FREQUENCY (Hz)
10 20
50 100 200 500 1Ăk 2Ăk
5Ăk 10Ăk 20Ăk 50Ăk 100Ăk
R , SOURCE RESISTANCE (OHMS)
S
Figure 4. Noise Current
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
300
200
20
BANDWIDTH = 1.0 Hz
I = 10 mA
C
3.0 mA
16
12
I
C
= 10 mA
100 µA
3.0 mA
1.0 mA
100
70
1.0 mA
50
30
20
300 µA
300 µA
8.0
30 µA
100 µA
30 µA
10
10 µA
4.0
0
7.0
5.0
10 µA
BANDWIDTH = 1.0 Hz
3.0
10 20
50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk 50Ăk 100Ăk
10 20 50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk 50Ăk 100Ăk
R , SOURCE RESISTANCE (OHMS)
S
R , SOURCE RESISTANCE (OHMS)
S
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
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MMBT5088LT1 MMBT5089LT1
4.0
3.0
V
CE
= 5.0 V
2.0
T = 125°C
A
25°C
1.0
0.7
-ā55°C
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
Figure 8. DC Current Gain
1.0
-ā0.4
-ā0.8
T = 25°C
J
0.8
0.6
0.4
0.2
0
V
BE
@ V = 5.0 V
-ā1.2
-ā1.6
-ā2.0
-ā2.4
CE
T = 25°C to 125°C
J
-ā55°C to 25°C
V
@ I /I = 10
C B
CE(sat)
0.01 0.02 0.05 0.1 0.2
1.0 2.0 5.0
0.01 0.02 0.05 0.1 0.2
1.0 2.0 5.0
0.5
10 20
50 100
0.5
10 20
50 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. “On” Voltages
Figure 9. Temperature Coefficients
8.0
6.0
500
T = 25°C
J
300
200
C
ob
C
ib
4.0
3.0
C
eb
C
cb
2.0
100
V
= 5.0 V
CE
70
50
T = 25°C
J
1.0
0.8
0.1
0.2
1.0
2.0
5.0
1.0
2.0 3.0
5.0 7.0
0.5
10
20
50 100
10
20 30
50 70 100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 12. Capacitance
Figure 10. Current–Gain — Bandwidth Product
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