MMBT5179 [ONSEMI]
NPN RF晶体管;
| 型号： | MMBT5179 |
| 厂家： | 
ONSEMI |
| 描述： | NPN RF晶体管 放大器 PC 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
NPN RF Transistor
MMBT5179
3
1
2
Description
1. Base 2. Emitter 3. Collector
This device is designed for use in low noise UHF/VHF amplifiers
with collector currents in the 100 mA to 30 mA range in common
emitter or common base mode of operation, and in low frequency
drift, high ouput UHF oscillators. Sourced from Process 40.
SOT−23
CASE 318−08
Features
MARKING DIAGRAM
• This Devices is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
3C M G
G
1
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Value
Unit
V
3C = Specific Device Code
M
= Date Code*
V
CEO
V
CBO
V
EBO
12
G
= Pb−Free Package
20
2.5
V
(Note: Microdot may be in either location)
V
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
I
C
Collector Current − Continuous
50
mA
°C
T , T
Operating and Storage Junction
Temperature Range (Note 1)
−55 to + 150
J
stg
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
Package
Shipping
3000 / Tape and Real
MMBT5179
SOT−23
(Pb−Free)
THERMAL CHARACTERISTICS
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(T = 25°C unless otherwise noted) (Note 3)
Symbol
Characteristic
Max
Unit
P
D
Total Device Dissipation
Derate above 25°C
225
1.8
MW
mW/°C
RqJA
Thermal Resistance, Junction to Ambient
556
°C/W
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady−state limits. onsemi should be consulted on applications
involving pulsed or low−duty cycle operations.
3. Device mounted on FR−4 PCB 1.6” 1.6” 0.06”.
© Semiconductor Components Industries, LLC, 1997
1
Publication Order Number:
May, 2022 − Rev. 1
MMBT5179/D
MMBT5179
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
= 3.0 mA, I = 0
Min
12
Max
Unit
V
V
Collector−Emitter Sustaining Voltage (Note 4)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
I
I
I
CEO(sus)
C
C
E
B
V
= 1.0 mA, I = 0
20
V
(BR)CBO
E
V
= 10 mA, I = 0
2.5
V
(BR)EBO
C
I
V
= 15 V, I = 0
0.02
1.0
mA
mA
CBO
CB
E
V
= 15 V, T = 150_C
CB
A
ON CHARACTERISTICS
h
DC Current Gain
I
C
I
C
I
C
= 3.0 mA, V = 1.0 V
25
250
0.4
1.0
FE
CE
V
V
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
= 10 mA, I = 1.0 mA
V
V
CE(sat)
BE(sat)
B
= 10 mA, I = 1.0 mA
B
SMALL SIGNAL CHARACTERISTICS
f
Current Gain − Bandwidth Product
Collector−Base Capacitance
Small−Signal Current Gain
Collector Base Time Constant
Noise Figure
I
= 5.0 mA, V = 6.0 V, f = 100 MHz
900
2000
1.0
MHz
pF
T
C
CE
C
h
V
= 10 V, I = 0, f = 0.1 to 1.0 MHz
CB E
cb
I
I
I
= 2.0 mA, V = 6 V, f = 1.0 kHz
25
300
14
fe
C
C
C
CE
rb’C
NF
= 2.0 mA, V = 6.0 V, f = 31.9 MHz
3.0
ps
c
CB
= 1.5 mA, V = 6.0 V,
5.0
dB
CE
R
= 50 W, f = 200 MHz
S
FUNCTIONAL TEST
G
Amplifier Power Gain
Power Output
V
V
= 6.0 V, I = 5.0 mA, f = 200 MHz
15
20
dB
pe
CE
C
P
= 10 V, I = 12 mA, f ≥ 500 MHz
mW
O
CB
E
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
SPICE MODEL
NPN (Is=69.28E−18 Xti=3 Eg=1.11 Vaf=100 Bf=282.1 Ne=1.177 Ise=69.28E−18 Ikf=22.03m Xtb=1.5 Br=1.176 Nc=2
Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.588n Tf=135.6p Itf=.27 Vtf=10
Xtf=30 Rb=10)
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2
MMBT5179
TYPICAL CHARACTERISTICS
250
200
150
100
50
0.2
V
CE
= 5 V
b = 10
125°C
0.15
0.1
25°C
125°C
−40°C
−40°C
25°C
0.05
0
30
20
0.001
0.01
0.1
0.1
1
10
I , Collector Current (A)
C
I , Collector Current (mA)
C
Figure 2. Collector− Emitter Saturation Voltage
Figure 1. DC Current Gain
vs. Collector Current
vs. Collector Current
1.2
1
1
−40°C
0.8
0.6
0.4
0.2
25°C
−40°C
0.8
0.6
0.4
25°C
125°C
125°C
b = 10
10 20 30
V
CE
= 5 V
0.01
0.1
1
0.1
1
10
50
I , Collector Current (mA)
C
I , Collector Current (mA)
C
Figure 4. Base−Emitter ON Voltage
Figure 3. Base−Emitter Saturation Voltage
vs. Collector Current
vs. Collector Current
100
10
1
625
500
375
250
125
V
CB
=20 V
0.1
0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T , Ambient Temperature (°C)
A
Temperature (°C)
Figure 5. Collector Cut−Off Current
Figure 6. Power Dissipation
vs. Ambient Temperature
vs. Ambient Temperature
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3
MMBT5179
TEST CIRCUIT
50 pF
(Note 2)
175 pF
500 mHz Output
into 50 W
RFC
(Note 1)
1000 pF
Note 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long
Note 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long
1000 pF
2.2 kW
RFC
−V
ee
V
cc
Figure 7. 500 MHz Oscillator Circuit
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. COLLECTOR
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1. ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE−ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
2. ANODE
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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