MMBT6428 [ONSEMI]
NPN通用放大器;型号: | MMBT6428 |
厂家: | ONSEMI |
描述: | NPN通用放大器 放大器 |
文件: | 总5页 (文件大小:210K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MMBT6428
NPN General Purpose Amplifier
3
•
This device designed for general pupose amplifier applications at
collector currents to 300mA
•
Sourced from process 10.
2
SOT-23
Mark: 1K
1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* T =25°C unless otherwise noted
C
Symbol
Parameter
Value
50
Units
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current
CEO
CBO
60
V
I
- Continuous
500
mA
°C
C
T , T
Operating and Storage Junction Temperature Range
- 55 ~ 150
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
V
Collector-Emitter Breakdown Voltage *
Collector-Base BreakdownVoltage
Collector Cut-off Current
I
I
= 1.0mA, I = 0
50
60
V
(BR)CEO
(BR)CBO
CEO
C
C
B
= 100µA, I = 0
V
E
I
I
I
V
V
V
= 30V, I = 0
0.1
10
10
µA
nA
nA
CE
CB
EB
B
Collector Cut-off Current
= 30V, I = 0
E
CBO
Emitter Cut-off Current
= 5.0V, I = 0
B
EBO
On Characteristics
h
DC Current Gain
V
V
V
V
= 5.0V, I = 10µA
250
250
250
250
FE
CE
CE
CE
CE
C
= 5.0V, I = 100µA
650
C
= 5.0V, I = 1.0mA
C
= 5.0V, I = 10mA
C
V
V
(sat)
(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
I
= 10mA, I = 0.5mA
0.2
0.6
V
V
CE
C
C
B
= 100mA, I = 5.0mA
B
V
= 5.0V, I = 1.0mA
0.56
100
0.66
BE
CE
C
Small Signal Characteristics
f
Current gain Bandwidth Product
V
= 5.0V, I = 1.0mA,
700
MHz
T
CE
C
f = 100MHz
C
C
Output Capacitance
Input Capacitance
V
V
= 10V, I = 0, f = 1.0MHz
3.0
8.0
pF
pF
obo
ibo
CB
EB
E
= 0.5V, I = 0, f = 1.0MHz
C
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Publication Order Number:
©2002 Semiconductor Components Industries, LLC.
October-2017,Rev 1
MMBT6428/D
Thermal Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
Max.
Units
P
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
D
R
R
Thermal Resistance, Junction to Case
°C/W
°C/W
θJC
θJA
Thermal Resistance, Junction to Ambient
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
www.onsemi.com
2
Package Dimensions
SOT-23
0.40 ±0.03
0.03~0.10
0.38 REF
+0.05
–0.023
0.40 ±0.03
0.12
0.96~1.14
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
www.onsemi.com
3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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