MMBT918 [ONSEMI]
NPN 射频晶体管;
| 型号： | MMBT918 |
| 厂家： | 
ONSEMI |
| 描述： | NPN 射频晶体管 射频 晶体管 |
| 文件： | 总17页 (文件大小：628K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PN918
MMBT918
C
E
TO-92
C
B
B
E
SOT-23
Mark: 3B
NPN RF Transistor
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
15
V
V
Collector-Base Voltage
30
3.0
Emitter-Base Voltage
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
50
mA
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN918
*MMBT918
PD
Total Device Dissipation
Derate above 25 C
350
2.8
225
1.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Case
125
Rθ
C/W
°
JC
Thermal Resistance, Junction to Ambient
357
556
Rθ
C/W
°
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NPN RF Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage*
IC = 3.0 mA, IB = 0
I = 1.0 A, I = 0
15
30
V
V
V
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
µ
C
E
3.0
I = 10 A, I = 0
µ
E
C
VCB = 15 V, IE = 0
0.01
1.0
A
A
µ
µ
VCB = 15 V, T = 150 C
°
A
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 3.0 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 10 mA, IB = 1.0 mA
20
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.4
1.0
V
VCE(sat)
VBE(sat)
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 4.0 mA, VCE = 10 V,
f = 100 MHz
600
MHz
Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
1.7
3.0
2.0
pF
pF
pF
Cobo
VCB = 0, IE = 0, f = 1.0 MHz
Input Capacitance
Noise Figure
VBE = 0.5 V, IC = 0, f = 1.0 MHz
Cibo
NF
IC = 1.0 mA, VCE = 6.0 V,
6.0
dB
R = 400 , f = 60 MHz
Ω
G
FUNCTIONAL TEST
Amplifier Power Gain
VCB = 12 V, IC = 6.0 mA,
f = 200 MHz
VCB = 15 V, IC = 8.0 mA,
f = 500 MHz
VCB = 15 V, IC = 8.0 mA,
f = 500 MHz
15
30
25
dB
mW
%
Gpe
PO
Power Output
Collector Efficiency
η
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NPN RF Transistor
(continued)
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
vs Collector Current
Voltage vs Collector Current
100
0.3
0.25
0.2
V
= 5V
CE
90
80
70
60
50
40
30
20
β = 10
125 °C
125 °C
25 °C
0.15
0.1
- 40 °C
25 °C
- 40 °C
0.05
0.1 0.2
0.5
1
2
5
10
20
50
0.1
1
10
30
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
β = 10
V
= 5V
1
0.8
0.6
0.4
CE
- 40 °C
- 40 °C
25 °C
25 °C
125 °C
125 °C
0.1
1
10
30
0.1
1
10
20
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
Input and Output Capacitance
vs Reverse Voltage
100
10
1
5
1
f = 1.0 MHz
VCB= 20V
Cob
Cib
0.1
25
0.1
0.1
50
75
100
125
150
1
10
100
TA - AMBIENTTEMPERATURE ( C)
°
VCE - COLLECTOR VOLTAGE (V)
NPN RF Transistor
(continued)
Typical Characteristics (continued)
Contours of Constant Gain
Bandwidth Product (fT )
Gain Bandwidth Product
vs Collector Current
15
12
9
°
100 MHz
T A = 25 C
V
= 5V
1050
900
750
600
450
300
150
0
ce
900 MHz
300 MHz
800 MHz
600 MHz
400 MHz
6
3
600 MHz
200 MHz
0
0.1
0.2
0.5
1
5
10
20
50
100
1
10
20
50
100
200
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Small Signal Current Gain
vs Collector Current
Contours of Constant Noise Figure
1000
90
80
70
60
50
40
f = 10 MHz
VCE= 10V
500
200
100
50
NOISE FIG. (dB)
f = 60 MHz
VCE = 6.0V
20
10
0.1
0.5
1
5
10
50
100
0
2
4
6
8
10
I C- COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
350
300
250
200
150
100
50
TO-92
SOT-23
0
0
25
50
75
100
125
150
°
TEMPERATURE ( C)
NPN RF Transistor
(continued)
Common Emitter Y Parameters vs. Frequency
Input Admittance vs Collector
Current-Output Short Circuit
Input Admittance vs Collector
Current-Output Short Circuit
2
1.6
1.2
0.8
0.4
0
10
8
f = 10.7 MHz
VCE= 10V
f = 100 MHz
gie
VCE= 10V
VCE = 5V
6
VCE= 10V
4
bie
VCE = 5V
2
0
0
2
4
6
8
10
0
2
4
6
8
10
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Input Admittance vs
Frequency-Output Short Circuit
Forward Transfer Admittance vs
Frequency-Output Open Circuit
25
20
15
10
5
100
80
60
40
20
0
I
= 5.0 mA
I = 5.0 mA
c
VCE = 10V
c
gie
VCE= 10V
-bfe
gfe
bie
0
10
20
50
100
200
500
1000
10
20
50
100
200
500
1000
f - FREQUENCY (MHz)
f - FREQUENCY (MHz)
Forward Trans. Admittance vs Collector
Current-Output Short Circuit
Forward Trans. Admittance vs Collector
Current-Output Short Circuit
100
120
f = 100 MHz
f = 10.7 MHz
VCE= 10V
VCE= 10V
100
80
gfe
VCE = 5.0V
80
60
VCE = 5.0V
60
40
VCE= 10V
gfe
40
20
20
-bfe
-bfe
0
0
0
2
4
6
8
10
0
2
4
6
8
10
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
NPN RF Transistor
(continued)
Common Emitter Y Parameters vs. Frequency (continued)
Reverse Transfer Admittance vs
Reverse Transfer Admittance vs
Collector Current-Input Short Circuit
1
Collector Current-Input Short Circuit
0.1
f = 10.7 MHz
VCE= 10V
-bre
-bre
VCE= 10V
0.5
0.08
0.06
0.04
0.02
0
VCE= 5.0V
0.2
0.1
VCE = 5.0V
0.05
-gre
-gre
0.02
0.01
VCE = 10V
f = 100 MHz
0
2
4
6
8
10
0
2
4
6
8
10
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Reverse Transfer Admittance vs
Frequency-Input Short Circuit
Output Admittance vs Collector
Current-Input Short Circuit
5
4
3
2
1
0
0.3
0.25
0.2
I
= 5.0 mA
f = 10.7 MHz
VCE= 10V
c
-bre
VCE = 10V
boe
0.15
0.1
goe
0.05
0
-gre
10
20
50
100
200
500
1000
0
2
4
6
8
10
f - FREQUENCY (MHz)
IC - COLLECTOR CURRENT (mA)
Output Admittance vs Collector
Current-Input Short Circuit
Output Admittance vs
Frequency-Input Short Circuit
2
10
8
f = 100 MHz
I
= 5.0 mA
c
boe
VCE = 10V
1.6
1.2
0.8
0.4
0
VCE= 5.0V
boe
6
VCE = 10V
4
VCE= 5.0V
2
goe
VCE= 10V
goe
0
0
2
4
6
8
10
10
20
50
100
200
500
1000
IC - COLLECTOR CURRENT (mA)
f - FREQUENCY (MHz)
NPN RF Transistor
(continued)
Test Circuit
50 pF
(NOTE 2)
175 pF
500 mHz Output
into 50Ω
RFC
(NOTE 1)
1000 pF
NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long
NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long
1000 pF
2.2 KΩ
RFC
VCC
- Vee
FIGURE 1: 500 MHz Oscillator Circuit
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Hd
P
Pd
b
Ha
W1
d
S
L
H1
HO
L1
WO
t
W2
W
t1
P1 F1
P2
DO
ITEM DESCRIPTION
SYMBOL
DIMENSION
PO
b
0.098 (max)
Base of Package to Lead Bend
Component Height
Ha
HO
H1
Pd
Hd
P
0.928 (+/- 0.025)
0.630 (+/- 0.020)
0.748 (+/- 0.020)
0.040 (max)
User Direction of Feed
Lead Clinch Height
Component Base Height
Component Alignment ( side/side )
Component Alignment ( front/back )
Component Pitch
0.031 (max)
0.500 (+/- 0.020)
0.500 (+/- 0.008)
0.150 (+0.009, -0.010)
0.247 (+/- 0.007)
0.104 (+/- 0 .010)
0.018 (+0.002, -0.003)
0.429 (max)
PO
P1
P2
F1/F2
d
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
L
Cut Lead Length
L1
t
0.209 (+0.051, -0.052)
0.032 (+/- 0.006)
0.021 (+/- 0.006)
0.708 (+0.020, -0.019)
0.236 (+/- 0.012)
0.035 (max)
Taped Lead Length
Taped Lead Thickness
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t1
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DO
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Sprocket Hole Diameter
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Reel Diameter
D1
D2
D2
D3
D4
W1
W2
W3
13.975
1.160
0.650
3.100
2.700
0.370
1.630
14.025
1.200
0.700
3.300
3.100
0.570
1.690
2.090
F63TNR Label
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P0
P2
D0
D1
T
E1
E2
W
F
Wc
B0
Tc
K0
A0
P1
User Direction of Feed
Dimensions are in millimeter
E1 E2
A0
B0
W
D0
D1
F
P1
P0
K0
T
Wc
5.2
Tc
Pkg type
SOT-23
(8mm)
3.15
+/-0.10
2.77
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
1.75
+/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
1.30
+/-0.10
0.228
+/-0.013
0.06
+/-0.02
+/-0.125
+/-0.3
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SOT-23 Reel Configuration: Figure 4.0
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7"Diameter Option
B Min
Dim C
See detail AA
Dim D
min
W3
13" Diameter Option
W2 max Measured at Hub
DETAIL AA
Dim W2
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8mm
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W3 (LSL-USL)
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
7" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
13" Dia
September 1999, Rev. C
SOT-23 Package Dimensions
SOT-23 (FS PKG Code 49)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0082
September 1998, Rev. A1
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