MMBTA13LT1_16 [ONSEMI]

Darlington Amplifier Transistors;


型号：	MMBTA13LT1_16
厂家：	ONSEMI
描述：	Darlington Amplifier Transistors
文件：	总6页 (文件大小：194K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMBTA13L, SMMBTA13L,

MMBTA14L, SMMBTA14L

Darlington Amplifier

Transistors

NPN Silicon

www.onsemi.com

Features

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

SOT−23 (TO−236)

CASE 318

STYLE 6

COLLECTOR 3

MAXIMUM RATINGS

BASE

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

Unit

Vdc

CES

CBO

EBO

Vdc

EMITTER 2

Vdc

Collector Current − Continuous

300

mAdc

MARKING DIAGRAM

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

1x M G

Total Device Dissipation FR−5 Board

(Note 1) T = 25°C

225

1.8

mW/°C

Derate above 25°C

1x = Device Code

Thermal Resistance, Junction−to−Ambient

556

°C/W

x = M for MMBTA13LT1G,

SMMBTA13LT1G

Total Device Dissipation Alumina

Substrate, (Note 2) T = 25°C

300

2.4

mW/°C

x = N for MMBTA14LT1G,

SMMBTA14LT1G, T3G

= Date Code*

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

417

°C/W

°C

= Pb−Free Package

T , T

−55 to +150

stg

(Note: Microdot may be in either location)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBTA13LT1G,

SMMBTA13LT1G

SOT−23 3,000 / Tape & Reel

(Pb−Free)

MMBTA14LT1G,

SMMBTA14LT1G

SOT−23 3,000 / Tape & Reel

(Pb−Free)

SMMBTA14LT3G SOT−23

(Pb−Free)

10,000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

October, 2016 − Rev. 6

MMBTA13LT1/D

MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

Vdc

nAdc

(BR)CES

(I = 100 mAdc, V = 0)

−

Collector Cutoff Current

(V = 30 Vdc, I = 0)

CBO

100

Emitter Cutoff Current

(V = 10 Vdc, I = 0)

EBO

−

ON CHARACTERISTICS (Note 3)

DC Current Gain

−

(I = 10 mAdc, V = 5.0 Vdc)

MMBTA13, SMMBTA13

MMBTA14, SMMBTA14

5000

10,000

−

(I = 100 mAdc, V = 5.0 Vdc)

MMBTA13, SMMBTA13

MMBTA14, SMMBTA14

10,000

20,000

−

Collector−Emitter Saturation Voltage

Vdc

CE(sat)

(I = 100 mAdc, I = 0.1 mAdc)

−

1.5

2.0

Base−Emitter On Voltage

(I = 100 mAdc, V = 5.0 Vdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 4)

MHz

(I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz)

125

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

4. f = |h | • f .

test

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

www.onsemi.com

MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L

NOISE CHARACTERISTICS

(V_CE= 5.0 Vdc, T_A= 25°C)

500

2.0

BANDWIDTH = 1.0 Hz

R ≈ 0

1.0

0.7

0.5

200

100

= 1.0 mA

0.3

0.2

10 mA

100 mA

10 mA

0.1

0.07

0.05

= 1.0 mA

0.03

0.02

5.0

10 20

50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk

f, FREQUENCY (Hz)

10 20

50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk

f, FREQUENCY (Hz)

Figure 2. Noise Voltage

Figure 3. Noise Current

200

BANDWIDTH = 10 Hz TO 15.7 kHz

= 10 mA

100

8.0

6.0

4.0

2.0

10 mA

100 mA

= 1.0 mA

1.0 mA

1.0 2.0

5.0

50 100 200

500 1000

1.0 2.0

5.0

50 100 200

500 1000

R , SOURCE RESISTANCE (kW)

Figure 4. Total Wideband Noise Voltage

Figure 5. Wideband Noise Figure

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MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L

SMALL−SIGNAL CHARACTERISTICS

4.0

= 5.0 V

f = 100 MHz

T = 25°C

2.0

7.0

5.0

ibo

1.0

0.8

obo

0.6

0.4

3.0

2.0

0.2

0.04

0.1 0.2

0.4

1.0 2.0 4.0

10 20

0.5 1.0

2.0

0.5 10 20

100 200

500

V , REVERSE VOLTAGE (VOLTS)

I , COLLECTOR CURRENT (mA)

Figure 6. Capacitance

Figure 7. High Frequency Current Gain

200ꢀk

3.0

2.5

2.0

1.5

1.0

0.5

T = 125°C

T = 25°C

100ꢀk

70ꢀk

50ꢀk

50 mA

250 mA 500 mA

10 mA

25°C

30ꢀk

20ꢀk

10ꢀk

7.0ꢀk

5.0ꢀk

-ꢁ55°C

= 5.0 V

3.0ꢀk

2.0ꢀk

500

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000

5.0 7.0 10

20 30

50 70 100

200 300

I , COLLECTOR CURRENT (mA)

I , BASE CURRENT (mA)

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

1.6

1.4

-ꢁ1.0

-ꢁ2.0

-ꢁ3.0

-ꢁ4.0

-ꢁ5.0

-ꢁ6.0

*APPLIES FOR I /I ≤ h /3.0

C B

25°C TO 125°C

T = 25°C

FOR V

CE(sat)

@ I /I = 1000

-ꢁ55°C TO 25°C

25°C TO 125°C

BE(sat)

C B

1.2

1.0

0.8

0.6

BE(on)

@ V = 5.0 V

FOR V

-ꢁ55°C TO 25°C

@ I /I = 1000

C B

CE(sat)

5.0 7.0

20 30

50 70 100 200 300

500

5.0 7.0 10

20 30

50 70 100

200 300 500

I , COLLECTOR CURRENT (mA)

Figure 10. “On” Voltages

Figure 11. Temperature Coefficients

www.onsemi.com

MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L

1.0

0.7

0.5

D = 0.5

0.2

0.3

0.2

SINGLE PULSE

0.05

0.1

0.07

0.05

0.03

0.02

= r(t) • R ꢂT

- T = P

JC(t)

JA(t)

J(pk)

(pk) JC(t)

= r(t) • R ꢂT

- T = P

J(pk)

(pk) JA(t)

0.01

0.1

0.2

0.5

1.0

2.0

5.0

100

200

500

1.0ꢀk

2.0ꢀk

5.0ꢀk 10ꢀk

t, TIME (ms)

Figure 12. Thermal Response

1.0ꢀk

700

1.0 ms

500

= 25°C

300

200

100 ms

T = 25°C

1.0 s

100

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

0.4 0.6

1.0

2.0

4.0 6.0

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 13. Active Region Safe Operating Area

FIGURE A

1/f

DUTYꢀCYCLE + t ꢀf +

PEAK PULSE POWER = P

Design Note: Use of Transient Thermal Resistance Data

www.onsemi.com

MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

THE BASE MATERIAL.

0.25

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

MILLIMETERS

INCHES

NOM

0.039

0.002

0.017

0.006

0.114

0.051

0.075

0.017

0.021

0.094

−−−

DIM

MIN

0.89

0.01

0.37

0.08

2.80

1.20

1.78

0.30

0.35

2.10

NOM

1.00

0.06

0.44

0.14

2.90

1.30

1.90

0.43

0.54

2.40

−−−

MAX

MIN

MAX

0.044

0.004

0.020

0.008

0.120

0.055

0.080

0.022

0.027

0.104

10 _

1.11

0.10

0.50

0.20

3.04

1.40

2.04

0.55

0.69

2.64

10 _

0.035

0.000

0.015

0.003

0.110

0.047

0.070

0.012

0.014

0.083

0 _

VIEW C

TOP VIEW

SEE VIEW C

STYLE 6:

PIN 1. BASE

SIDE VIEW

END VIEW

2. EMITTER

3. COLLECTOR

RECOMMENDED

SOLDERING FOOTPRINT*

0.90

2.90

0.95

PITCH

0.80

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

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◊

MMBTA13LT1/D

www.onsemi.com

MMBTA13LT1_16 [ONSEMI]

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