MMBTA55 [ONSEMI]
Driver Transistors(PNP Silicon); 驱动晶体管（ PNP硅）
| 型号： | MMBTA55 |
| 厂家： | 
ONSEMI |
| 描述： | Driver Transistors(PNP Silicon) |
| 文件： | 总6页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA55LT1,
MMBTA56LT1
MMBTA56LT1 is a Preferred Device
Driver Transistors
PNP Silicon
http://onsemi.com
Features
• Pb−Free Package is Available
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
1
Collector−Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
BASE
MMBTA55
MMBTA56
−60
−80
2
Collector−Base Voltage
Emitter−Base Voltage
Vdc
EMITTER
MMBTA55
MMBTA56
−60
−80
3
−4.0
Vdc
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
I
−500
mAdc
C
1
2
SOT−23
CASE 318
STYLE 6
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
P
225
mW
D
(Note 1) T = 25°C
A
Derate above 25°C
1.8
mW/°C
°C/W
MARKING DIAGRAMS
Thermal Resistance,
Junction−to−Ambient
R
556
q
JA
Total Device Dissipation Alumina
P
D
300
mW
2H X
2GM X
Substrate, (Note 2) T = 25°C
A
Derate above 25°C
2.4
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient
R
417
q
JA
MMBTA55LT1
MMBTA56LT1
2H, 2GM = Specific Device Code
= Date Code
Junction and Storage Temperature
T , T
−55 to
+150
°C
J
stg
X
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
SOT−23
SOT−23
SOT−23
Shipping
MMBTA55LT1
MMBTA55LT3
MMBTA56LT1
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
MMBTA56LT1G SOT−23
(Pb−Free)
MMBTA56LT3
SOT−23
10,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
March, 2004 − Rev. 3
MMBTA55LT1/D
MMBTA55LT1, MMBTA56LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I = −1.0 mAdc, I = 0)
V
Vdc
(BR)CEO
MMBTA55
MMBTA56
−60
−80
−
−
C
B
Emitter−Base Breakdown Voltage
(I = −100 mAdc, I = 0)
V
−4.0
−
Vdc
mAdc
mAdc
(BR)EBO
E
C
Collector Cutoff Current
(V = −60 Vdc, I = 0)
I
−
−0.1
CES
CE
B
Collector Cutoff Current
(V = −60 Vdc, I = 0)
I
CBO
MMBTA55
MMBTA56
−
−
−0.1
−0.1
CB
E
(V = −80 Vdc, I = 0)
CB
E
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = −10 mAdc, V = −1.0 Vdc)
100
100
−
−
C
CE
(I = −100 mAdc, V = −1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = −100 mAdc, I = −10 mAdc)
V
−
−0.25
Vdc
Vdc
CE(sat)
C
B
Base−Emitter On Voltage
(I = −100 mAdc, V = −1.0 Vdc)
V
BE(on)
−
−1.2
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
f
T
50
−
MHz
(I = −100 mAdc, V = −1.0 Vdc, f = 100 MHz)
C
CE
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f is defined as the frequency at which |h | extrapolates to unity.
T
fe
TURN−ON TIME
TURN−OFF TIME
V
V
+V
CC
CC
−1.0 V
BB
+40 V
+40 V
5.0 ms
100
R
L
100
R
L
OUTPUT
OUTPUT
+10 V
0
V
in
R
B
V
in
R
B
t = 3.0 ns
r
* C t 6.0 pF
S
* C t 6.0 pF
S
5.0 mF
5.0 mF
100
100
5.0 ms
t = 3.0 ns
r
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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2
MMBTA55LT1, MMBTA56LT1
200
100
70
T = 25°C
J
V
= −2.0 V
CE
T = 25°C
J
50
C
ibo
100
70
30
20
50
C
obo
10
30
20
7.0
5.0
−2.0 −3.0 −5.0 −7.0 −10
−20 −30 −50 −70 −100
−200
−0.1 −0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Current−Gain — Bandwidth Product
Figure 3. Capacitance
1.0 k
700
500
400
T = 125°C
J
V
CE
= −1.0 V
t
s
300
200
200
25°C
100
70
−55°C
t
100
80
f
50
V
= −40 V
CC
I /I = 10
30
20
C B
60
I = I
B1 B2
t
r
t @ V
d
= −0.5 V
BE(off)
T = 25°C
J
10
40
−5.0 −7.0 −10
−20 −30
−50 −70 −100
−200 −300 −500
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200
−500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 4. Switching Time
Figure 5. DC Current Gain
−1.0
T = 25°C
J
−0.8
−0.6
−0.4
−0.2
V
@ I /I = 10
C B
BE(sat)
V
BE(on)
@ V = −1.0 V
CE
V
@ I /I = 10
C B
CE(sat)
0
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200 −500
I , COLLECTOR CURRENT (mA)
C
Figure 6. “ON” Voltages
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3
MMBTA55LT1, MMBTA56LT1
−0.8
−1.0
−0.8
−0.6
T = 25°C
J
−1.2
I
=
I
=
I
=
I
=
C
−250 mA
C
−100 mA
C
−50 mA
C
−500 mA
−1.6
−2.0
R
q
for V
BE
VB
−0.4
−0.2
0
I
=
C
−10 mA
−2.4
−2.8
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200 −500
−0.05 −0.1 −0.2
−0.5 −1.0 −2.0 −5.0 −10 −20
−50
I , COLLECTOR CURRENT (mA)
C
I , BASE CURRENT (mA)
B
Figure 8. Base−Emitter Temperature
Coefficient
Figure 7. Collector Saturation Region
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4
MMBTA55LT1, MMBTA56LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
L
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
C
B
1
2
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
V
G
INCHES
DIM MIN MAX
MILLIMETERS
MIN
2.80
1.20
0.89
0.37
1.78
MAX
3.04
1.40
1.11
A
B
C
D
G
H
J
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
H
J
D
K
0.0005 0.0040 0.013
0.0034 0.0070 0.085
K
L
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
0.35
0.89
2.10
0.45
S
V
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
SOT−23
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MMBTA55LT1, MMBTA56LT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MMBTA55LT1/D
相关型号：
MMBTA55-13
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
DIODES
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