MMBTH10 [ONSEMI]
NPN 射频晶体管;
| 型号： | MMBTH10 |
| 厂家： | 
ONSEMI |
| 描述： | NPN 射频晶体管 射频 光电二极管 小信号双极晶体管 射频小信号双极晶体管 |
| 文件： | 总3页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MPSH10
Preferred Device
VHF/UHF Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
1
Collector−Emitter Voltage
V
CEO
V
CBO
V
EBO
25
Vdc
BASE
Collector−Base Voltage
Emitter−Base Voltage
30
Vdc
Vdc
3.0
2
EMITTER
Total Device Dissipation @ T = 25°C
P
D
350
2.8
W
mW/°C
A
Derate above 25°C
Total Device Dissipation @ T = 25°C
P
D
1.0
8.0
W
mW/°C
C
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
TO−92
CASE 29−11
STYLE 2
Characteristic
Symbol
Max
200357
125
Unit
°C/W
°C/W
1
2
3
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
q
JA
R
q
JC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
MPS
H10
AYWW G
G
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
February, 2007 − Rev. 3
MPSH10/D
MPSH10
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
V
25
30
3.0
−
−
−
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
C
B
Collector−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
−
Vdc
(I = 10 mAdc, I = 0)
E
C
Collector Cutoff Current
I
100
100
nAdc
nAdc
CBO
(V = 25 Vdc, I = 0)
CB
E
Emitter Cutoff Current
I
−
EBO
(V = 2.0 Vdc, I = 0)
EB
C
ON CHARACTERISTICS
DC Current Gain
h
60
−
−
−
FE
(I = 4.0 mAdc, V = 10 Vdc)
C
CE
Collector−Emitter Saturation Voltage
V
0.5
Vdc
Vdc
CE(sat)
(I = 4.0 mAdc, I = 0.4 mAdc)
C
B
Base−Emitter On Voltage
V
−
0.95
BE(on)
(I = 4.0 mAdc, V = 10 Vdc)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
650
−
−
MHz
pF
T
(I = 4.0 mAdc, V = 10 Vdc, f = 100 MHz)
C
CE
Collector−Base Capacitance
(V = 10 Vdc, I = 0, f = 1.0 MHz)
C
0.7
0.65
9.0
cb
CB
E
Common−Base Feedback Capacitance
(V = 10 Vdc, I = 0, f = 1.0 MHz)
C
0.35
−
pF
rb
CB
E
Collector Base Time Constant
(I = 4.0 mAdc, V = 10 Vdc, f = 31.8 MHz)
rb’C
ps
c
C
CB
ORDERING INFORMATION
†
Device
MPSH10
Package
Shipping
TO−92
5000 Units / Box
5000 Units / Box
MPSH10G
TO−92
(Pb−Free)
MPSH10RLRA
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
MPSH10RLRAG
TO−92
(Pb−Free)
MPSH10RLRP
TO−92
2000 / Ammo Pack
2000 / Ammo Pack
MPSH10RLRPG
TO−92
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
http://onsemi.com
2
MPSH10
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
−−−
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
K
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
−−−
0.205
0.210
0.165
0.021
0.055
0.105
0.020
−−−
D
X X
G
K
L
J
H
V
−−−
−−−
N
P
R
V
0.105
0.100
−−−
2.66
2.54
−−−
C
SECTION X−X
0.115
0.135
2.93
3.43
1
−−−
−−−
N
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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PUBLICATION ORDERING INFORMATION
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USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
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Email: orderlit@onsemi.com
For additional information, please contact your local
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MPSH10/D
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