MMBTH11 [ONSEMI]
NPN 射频晶体管;
| 型号： | MMBTH11 |
| 厂家： | 
ONSEMI |
| 描述： | NPN 射频晶体管 放大器 射频 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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MPSH11
MMBTH11
C
E
TO-92
C
E
B
B
SOT-23
Mark: 3G
NPN RF Transistor
This device is designed for common-emitter low noise amplifier
and mixer applications with collector currents in the 100 µA to
10 mA range to 300 MHz, and low frequency drift common-
base VHF oscillator applications with high output levels for
driving FET mixers. Sourced from Process 47.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
25
V
V
Collector-Base Voltage
30
3.0
Emitter-Base Voltage
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
50
mA
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSH11
*MMBTH11
PD
Total Device Dissipation
Derate above 25 C
350
2.8
225
1.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Case
125
Rθ
C/W
°
JC
Thermal Resistance, Junction to Ambient
357
556
Rθ
C/W
°
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
MPSH11/MMBTH11, Rev.
B
2002 Fairchild Semiconductor Corporation
NPN RF Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Sustaining Voltage*
IC = 1.0 mA, IB = 0
I = 100 A, I = 0
25
30
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
µ
C
E
3.0
V
I = 10 A, I = 0
µ
E
C
VCB = 25 V, IE = 0
VEB = 2.0 V, IC = 0
100
100
nA
nA
IEBO
Emitter Cutoff Current
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 4.0 mA, VCE = 10 V
IC = 4.0 mA, IB = 0.4 mA
IC = 4.0 mA, VCE = 10 V
60
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.5
V
V
VCE(sat)
VBE(on)
0.95
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 4.0 mA, VCE = 10 V,
f = 100 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
650
0.6
MHz
Collector-Base Capacitance
0.7
0.9
9.0
pF
pF
pS
Ccb
Crb
Common-Base Feedback Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz
Collector Base Time Constant
IC = 4.0 mA, VCB = 10 V,
f = 31.8 MHz
묬
rb
c
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
3
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
DC Current Gain
vs Collector Current
0.2
0.15
0.1
300
VCE = 5V
β = 1 0
250
125 °C
125 °C
200
150
25
25
100
- 40 °C
0.05
50
- 40 °C
0
0.01
0.1
1
10
100
0.1
1
10
20 30
I C- COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
MPSH11/MMBTH11, Rev.
B
NPN RF Transistor
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Base-Emitter ON Voltage vs
Voltage vs Collector Current
Collector Current
1
1
0.8
0.6
0.4
0.2
0.8
- 40 °C
- 40 °C
25
0.6
25
125 °C
β = 10
0.4
0.2
125 °C
V
= 5.0V
CE
0.01
0.1
1
10
100
0.1
1
10
20 30
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
Collector Cut-Off Current
vs Ambient Temperature
350
300
250
200
150
100
50
10
V
= 30V
CB
TO-92
1
SOT-23
0.1
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TA - AMBIENT TEMPERATURE ( C)
°
TEMPERATURE ( C)
°
Capacitance vs
Reverse Bias Voltage
Contours of Constant Gain
Bandwidth Product (fT)
3
2.4
1.8
1.2
0.6
0
50
f = 1.0 MHz
Cibo
1000 MHz
10
1
900 MHz
800 MHz
700 MHz
600 MHz
CCB
500 MHz
400 MHz
300 MHz
200 MHz
100 MHz
º
TA = 25 C
0.1
0.1
1
10
50
0.1
1
10
100
REVERSE BIAS VOLTAGE (V)
I C - COLLECTOR CURRENT (mA)
MPSH11/MMBTH11, Rev.
B
NPN RF Transistor
(continued)
Common Emitter Y Parameters
Input Admittance vs
Collector Current
Input Admittance vs
Collector Current
14
24
20
16
12
8
V CE = 10V
f = 200 MHz
VCE = 15V
f = 45 MHz
12
10
8
gie
gie
b ie
6
b ie
4
4
2
0
0
0
4
8
12
16
20
0
2
4
6
8
10
I C - COLLECTOR CURRENT (mA)
I C- COLLECTOR CURRENT (mA)
Input Admittance vs
Frequency
Input Admittance vs
Collector Voltage
20
16
12
8
28
24
20
16
12
8
V CE = 15V
IC = 7.0 mA
IC = 7.0 mA
f = 200 MHz
gie
3
b ie
gie
4
4
b ie
0
0
0
4
8
12
16
20
50
100
200
f - FREQUENCY (MHz)
500
1000
VCE - COLLECTOR VOLTAGE
Forward Transfer Admittance
vs Collector Current
Forward Transfer Admittance
vs Collector Current
500
120
100
80
60
40
20
0
V CE = 15V
f = 45 MHz
V CE = 10V
f = 200 MHz
200
100
-bfe
gfe
-bfe
10
1
gfe
0
2
4
6
8
10
0
4
8
12
16
20
24
I C- COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
MPSH11/MMBTH11, Rev.
B
NPN RF Transistor
(continued)
Common Emitter Y Parameters (continued)
Forward Transfer Admittance
vs Collector Voltage
Forward Transfer Admittance
vs Frequency
140
120
100
80
140
V CE = 15V
IC = 7.0 mA
IC = 7.0 mA
f = 45 MHz
gfe
120
100
80
60
40
20
0
-bfe
60
-bfe
40
gfe
20
0
50
100
200
500
1000
0
4
8
12
16
20
f - FREQUENCY (MHz)
VCE- COLLECTOR VOLTAGE (V)
Reverse Transfer Admittance
vs Collector Current
Reverse Transfer Admittance
vs Collector Current
0.28
0.24
0.2
0.6
0.5
0.4
0.3
0.2
0.1
0
VCE = 15V
f = 45 MHz
VCE = 10V
f = 200 MHz
-bre
-bre
0.16
0.12
0.08
0.04
0
-gre
-gre
0
2
4
6
8
10
0
4
8
12
16
20
I C- COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Reverse Transfer Admittance
vs Collector Voltage
Reverse Transfer Admittance
vs Frequency
0.4
0.36
0.32
0.28
0.24
0.2
1.4
1.2
1
IC = 7.0 mA
f = 45 MHz
V CE = 15V
IC = 7.0 mA
-bre
0.8
0.6
0.4
0.2
0
-bre
0.16
0.12
0.08
0.04
0
-gre
-gre
0
2
4
6
8
10 12 14 16 18 20
50
100
200
500
1000
VCE- COLLECTOR VOLTAGE (V)
f - FREQUENCY (MHz)
MPSH11/MMBTH11, Rev.
B
NPN RF Transistor
(continued)
Common Emitter Y Parameters (continued)
Output Admittance vs
Collector Current
Output Admittance vs
Collector Current
1000
5
VCE = 10V
f = 200 MHz
boe
boe
2
1
goe
100
0.5
goe
10
V CE = 15V
f = 45 MHz
0.2
0.1
1
0
4
8
12
16
20
24
0
2
4
6
8
10
I C- COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Output Admittance
vs Frequency
Output Admittance vs
Collector Voltage
10000
1000
100
10000
VCE = 15V
IC = 7.0 mA
IC = 7.0 mA
f = 45 MHz
boe
1000
100
10
boe
goe
3
goe
10
50
100
200
500
1000
0
4
8
12
16
20
24
f - FREQUENCY (MHz)
VCE - COLLECTOR VOLTAGE (V)
Power Gain and Noise Figure
vs Collector Current
Conversion Gain
vs Collector Current
35
30
25
20
15
10
5
28
26
24
22
20
VCC = 12V
f = 200 MHz
FIG. 2
PG
NF
fIF = 45 MHz
f O = 200 MHz
fLO = 245 MHz
VCE = 15V
FIG. 1
0
18
0
0
2
4
6
8
10
1
2
3
4
5
I C- COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
MPSH11/MMBTH11, Rev.
B
NPN RF Transistor
(continued)
Test Circuits
VCC = 12 V
270 Ω
1000 pF
1000 pF
200 mHz Output into
50Ω
L2
RL
RS
100 pF
200 mHz
Input
0.8-10 pF
L1
1000 pF
390 Ω
1000 pF
L1 - Ohmite Z-235 RFC
L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1
1/2 turns from cold side
2.2 KΩ
VBB
FIGURE 1: Unneutralized 200 MHz PG and NF Test Circuit
MPSH11/MMBTH11, Rev.
B
NPN RF Transistor
(continued)
Test Circuits (continued)
T1
4.0-30 pF
50 Ω
Output
0.002 µF
2KΩ
50 Ω
Input
2.2 KΩ
1/2 W
1000 pF
1000 pF
1000 pF
390 Ω
1/2 W
270 Ω
1/2 W
R.F. Beads
T1 - Q3 Toroid 4:1 ratio
No. 22 wire
}
8 turns Pri. 2 turns Sec.
VCC = 12 V
VAGC
FIGURE 2: 45 MHz Power Gain Circuit
200 mHz Output into
50Ω
T1
300 pF
RFin
1.1 pF
20pF
45 mHz Output
into 50Ω
3
2.0 pF
L1
LOin
245 mHz
Input into
50Ω
1000 pF
1000 pF
47 KΩ
L1 - Ohmite RFC Z235
T1 - Primary 5 turns No. 34 wire 1/4 inch
diameter. Secondary runs No. 34 wire close
wound over a Q100 core (10.7 mHz). When
terminated on secondary side with 50Ω primary
measures 1.5 K, -25 pF.
VBB
VCE
VCE = 15 V
FIGURE 3: 200 MHz Conversion Gain Test Circuit
MPSH11/MMBTH11, Rev.
B
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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