MMBZ20VAWT1G [ONSEMI]
齐纳保护，40 瓦峰值功率;
| 型号： | MMBZ20VAWT1G |
| 厂家： | 
ONSEMI |
| 描述： | 齐纳保护，40 瓦峰值功率 光电二极管 电视 瞬态抑制器 |
| 文件： | 总5页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBZ27VAWT1G
40 Watt Peak Power
Zener Transient Voltage
Suppressors
SC−70 Dual Common Anode Zeners
for ESD Protection
http://onsemi.com
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
1
2
3
MARKING
DIAGRAM
Features
AA MG
SC−70
CASE 419
STYLE 4
G
• SC−70 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Working Peak Reverse Voltage Range
1
AA = Specific Device Code
• Standard Zener Breakdown Voltage Range − 27 V
M
= Date Code
• Peak Power − 40 W @ 1.0 ms (Unidirectional),
G
= Pb−Free Package
per Figure 5 Waveform
(Note: Microdot may be in either location)
• ESD Rating:
− Class 3B (>16 kV) per the Human Body Model
− Class C (>400 V) per the Machine Model
ORDERING INFORMATION
†
• Low Leakage < 5.0 mA
Device
Package
Shipping
• Flammability Rating UL 94 V−0
• This is a Pb−Free Device
MMBZ27VAWT1G
SC−70
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
May, 2008 − Rev. 0
MMBZ27VAW/D
MMBZ27VAWT1G
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 1.0 ms (Note 1)
@ T ≤ 25°C
Symbol
Value
Unit
P
pk
40
W
L
Total Power Dissipation on FR−5 Board (Note 2) @ T = 25°C
°P °
D
200
1.6
°mW°
mW/°C
A
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature Range
R
618
°C/W
°C
q
JA
T , T
J
− 55 to +150
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non−repetitive current pulse per Figure 5 and derate above T = 25°C per Figure 6.
A
2. FR−5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
I
(T = 25°C unless otherwise noted)
A
I
F
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
Clamping Voltage @ I
PP
C
V
C
V
V
BR RWM
V
I
V
F
V
Working Peak Reverse Voltage
R
T
RWM
I
I
R
Maximum Reverse Leakage Current @ V
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
I
PP
QV
Maximum Temperature Coefficient of V
Forward Current
BR
BR
I
F
Uni−Directional TVS
V
F
Forward Voltage @ I
F
Z
Maximum Zener Impedance @ I
Reverse Current
ZT
ZT
I
ZK
Z
ZK
Maximum Zener Impedance @ I
ZK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage
V
@ I (Note 4)
C
PP
I
V
@
RWM
nA
R
V
(Note 3) (V)
@ I
V
I
PP
V
RWM
QV
BR
T
C
BR
Device
mV/5C
24.3
Volts
Min
25.65
Nom
Max
mA
V
A
Marking
Device
MMBZ27VAWT1G
AA
22
50
27
28.35
1.0
40
1.0
3. V measured at pulse test current I at an ambient temperature of 25°C.
BR
T
4. Surge current waveform per Figure 5 and derate per Figure 6
http://onsemi.com
2
MMBZ27VAWT1G
TYPICAL CHARACTERISTICS
18
15
12
9
1000
100
10
1
6
3
0
0.1
0.01
−40
0
+50
+100
+150
−40
+25
+85
+125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 1. Typical Breakdown Voltage
versus Temperature
Figure 2. Typical Leakage Current
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
320
300
280
240
200
160
120
80
250
200
ALUMINA SUBSTRATE
5.6 V
150
100
50
15 V
FR−5 BOARD
40
0
0
0
1
2
3
0
25
50
75
100
125
150
175
BIAS (V)
TEMPERATURE (°C)
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
Figure 4. Steady State Power Derating Curve
http://onsemi.com
3
MMBZ27VAWT1G
TYPICAL CHARACTERISTICS
100
PULSE WIDTH (t ) IS DEFINED
P
90
80
70
60
50
40
30
20
10
0
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
t ≤ 10 ms
r
50% OF I .
PP
100
PEAK VALUE − I
PP
I
PP
HALF VALUE −
2
50
0
t
P
0
1
2
3
4
0
25
50
75
100
125
150 175 200
t, TIME (ms)
T , AMBIENT TEMPERATURE (°C)
A
Figure 5. Pulse Waveform
MMBZ27VAWT1
Figure 6. Pulse Derating Curve
MMBZ27VAWT1
100
100
10
1
RECTANGULAR
WAVEFORM, T = 25°C
RECTANGULAR
WAVEFORM, T = 25°C
A
A
BIDIRECTIONAL
BIDIRECTIONAL
10
UNIDIRECTIONAL
UNIDIRECTIONAL
1
0.1
1
10
100
1000
0.1
1
10
100
1000
PW, PULSE WIDTH (ms)
PW, PULSE WIDTH (ms)
Figure 7. Maximum Non−repetitive Surge
Figure 8. Maximum Non−repetitive Surge
Power, Ppk versus PW
Power, Ppk(NOM) versus PW
Power is defined as V
x I (pk) where V
is
Power is defined as V (NOM) x I (pk) where
Z Z
RSM
Z
RSM
the clamping voltage at I (pk).
V (NOM) is the nominal Zener voltage measured at
Z
Z
the low test current used for voltage classification.
http://onsemi.com
4
MMBZ27VAWT1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE M
D
NOTES:
e1
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
MILLIMETERS
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
E
H
E
DIM
A
A1
A2
b
c
D
MIN
0.80
0.00
NOM
0.90
0.05
MAX
1.00
0.10
MIN
0.032
0.000
MAX
0.040
0.004
1
2
0.7 REF
0.35
0.18
2.10
1.24
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
E
e
1.30
0.65 BSC
0.425 REF
2.10
0.026 BSC
0.017 REF
0.083
e1
L
c
H
2.00
2.40
0.079
0.095
E
A2
A
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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For additional information, please contact your local
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MMBZ27VAW/D
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