MMBZ5239ELT1G [ONSEMI]
225 mW Zener Diode Voltage Regulator;
| 型号： | MMBZ5239ELT1G |
| 厂家： | 
ONSEMI |
| 描述： | 225 mW Zener Diode Voltage Regulator 测试 光电二极管 齐纳二极管 |
| 文件： | 总6页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBZ52xxELT1G Series,
SZMMBZ52xxELT1G Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
http://onsemi.com
3
1
Cathode
Anode
Features
• 225 mW Rating on FR−4 or FR−5 Board
• Zener Voltage Range − 2.4 V to 91 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Peak Power − 225 W (8 x 20 ms)
MARKING
DIAGRAM
3
SOT−23
CASE 318
STYLE 8
Bxx M G
G
1
• AEC−Q101 Qualified and PPAP Capable
2
1
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• Pb−Free Packages are Available
Bxx = Device Code
xx
M
G
= (Refer to page 2)
= Date Code*
= Pb−Free Package
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
ORDERING INFORMATION
MAXIMUM RATINGS
†
Device
MMBZ52xxELT1G
Package
Shipping
Rating
Symbol
Max
Unit
SOT−23
(Pb−Free)
3000 / Tape &
Reel
Peak Power Dissipation @ 20 ms (Note 1)
P
pk
225
W
@ T ≤ 25°C
L
SZMMBZ52xxELT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
Total Power Dissipation on FR−5 Board,
(Note 2) @ T = 25°C
Derated above 25°C
P
D
225
1.8
mW
mW/°C
A
MMBZ52xxELT3G
SOT−23
10000 / Tape &
Reel
(Pb−Free)
Thermal Resistance, Junction−to−Ambient
R
556
°C/W
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Total Power Dissipation on Alumina
P
D
Substrate, (Note 3) @ T = 25°C
300
2.4
mW
mW/°C
A
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
R
417
°C/W
°C
q
JA
T , T
J
−65 to
stg
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 9.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
December, 2011 − Rev. 7
MMBZ5221ELT1/D
MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series
ELECTRICAL CHARACTERISTICS
I
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C
A
I
F
unless otherwise noted, V = 0.95 V Max. @ I = 10 mA)
F
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
V
Z
V
R
V
I
Z
Maximum Zener Impedance @ I
Reverse Current
V
F
R
ZT
ZT
ZK
ZT
I
I
Z
ZK
Maximum Zener Impedance @ I
ZK
I
Reverse Leakage Current @ V
Reverse Voltage
R
R
V
R
I
Forward Current
F
Zener Voltage Regulator
V
Forward Voltage @ I
F
F
ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (V = 0.9 V Max @ I = 10 mA for all types.)
F
F
Zener Voltage (Note 4)
Zener Impedance
Leakage Current
V (V)
Z
@ I
Z
ZT
@ I
Z
ZK
@ I
I @ V
R R
ZT
ZT
ZK
Device
Marking
Min
2.28
3.13
3.70
4.08
4.46
4.84
5.32
5.89
6.46
7.12
7.79
8.65
9.50
11.40
12.35
13.30
14.25
15.20
17.10
19.00
Nom
2.4
3.3
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
Max
2.52
mA
W
W
mA
mA
V
1
1
1
1
2
2
3
4
5
6
Device*
MMBZ5221ELT1/T3G
MMBZ5226ELT1/T3G
MMBZ5228ELT1/T3G
MMBZ5229ELT1/T3G
MMBZ5230ELT1/T3G
MMBZ5231ELT1/T3G
MMBZ5232ELT1/T3G
MMBZ5234ELT1/T3G
MMBZ5235ELT1/T3G
MMBZ5236ELT1/T3G
MMBZ5237ELT1/T3G
MMBZ5239ELT1/T3G
MMBZ5240ELT1/T3G
MMBZ5242ELT1/T3G
MMBZ5243ELT1/T3G
MMBZ5244ELT1/T3G
MMBZ5245ELT1/T3G
MMBZ5246ELT1G†
MMBZ5248ELT1/T1G
MMBZ5250ELT1/T3G
BE2
BE7
BE9
BF1
BF2
BF3
BF4
BF6
BF7
BF8
BF9
BG2
BG3
BG5
BG6
BG7
BG8
BG9
BH2
BH4
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
30
28
23
22
19
17
11
7
1200
1600
1900
2000
1900
1600
1600
1000
750
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
100
25
10
5
3.47
4.10
4.52
4.94
5
5.36
5
5.88
5
6.51
5
7.14
5
3
7.88
6
500
3
8.61
8
500
3
6.5
7
9.55
10
17
30
13
15
16
17
21
25
600
3
10.50
12.60
13.65
14.70
15.75
16.80
18.90
21.00
600
3
8
12
600
1
9.1
9.9
10
11
12
14
15
13
600
0.5
0.1
0.1
0.1
0.1
0.1
14
600
15
8.5
7.8
7
600
16
600
18
600
20
6.2
600
4. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.
Z
*Includes SZ−prefix devices where applicable.
†MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel.
http://onsemi.com
2
MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series
ELECTRICAL CHARACTERISTICS (continued) (Pinout: 1-Anode, 2-NC, 3-Cathode) (V = 0.9 V Max @ I = 10 mA for all types.)
F
F
Zener Voltage (Note 5)
Zener Impedance
Leakage Current
@ V
V (V)
Z
@ I
Z
ZT
@ I
Z
ZK
@ I
I
R
ZT
ZT
ZK
R
Device
Marking
Min
Nom
24
25
27
28
30
33
36
47
51
56
62
Max
mA
W
W
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
mA
V
Device*
MMBZ5252ELT1G†
MMBZ5253ELT1/T3G
MMBZ5254ELT1/T3G
MMBZ5255ELT1/T3G
MMBZ5256ELT1/T3G
MMBZ5257ELT1/T3G
MMBZ5258ELT1/T3G
MMBZ5261ELT1G
BH6
BH7
BH8
BH9
BJ1
BJ2
BJ3
BJ6
BJ7
BJ8
BK1
22.80
23.75
25.65
26.60
28.50
31.35
34.20
49.35
48.45
53.20
58.90
25.20
26.25
28.35
29.40
31.50
34.65
37.80
44.65
53.55
58.80
65.10
5.2
5
33
35
41
44
49
58
70
600
600
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
18
19
21
21
23
25
27
36
37
43
47
4.6
4.5
4.2
3.8
3.4
2.7
2.5
2.2
2
600
600
600
700
700
105
125
150
185
1000
1100
1300
1400
MMBZ5262ELT1/T3G
MMBZ5263ELT1/T3G
MMBZ5265ELT1G†
5. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.
Z
*Includes SZ−prefix devices where applicable.
†MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel.
http://onsemi.com
3
MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
100
TYPICAL T VALUES
FOR MMBZ52xxBLT1G SERIES,
SZMMBZ52xxBLT1G SERIES
TYPICAL T VALUES
FOR MMBZ52xxBLT1G SERIES,
SZMMBZ52xxBLT1G SERIES
C
C
V @ I
Z
ZT
V @ I
Z
ZT
10
2
1
0
−1
−2
−3
1
2
3
4
5
6
7
8
9
10
11 12
10
100
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 1. Temperature Coefficients
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
(Temperature Range −55°C to +150°C)
1000
100
10
1000
100
10
T = 25°C
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
J
I
= 0.1 I
Z(AC)
Z(DC)
I = 1 mA
Z
f = 1 kHz
5 mA
20 mA
75°C 25°C
0.6 0.7
0°C
150°C
0.5
1
1
1
10
V , NOMINAL ZENER VOLTAGE
100
0.4
0.8
0.9
1.0
1.1
1.2
V , FORWARD VOLTAGE (V)
F
Z
Figure 3. Effect of Zener Voltage on
Zener Impedance
Figure 4. Typical Forward Voltage
http://onsemi.com
4
MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series
TYPICAL CHARACTERISTICS
1000
100
1000
T = 25°C
A
100
10
0 V BIAS
1 V BIAS
1
+150°C
BIAS AT
50% OF V NOM
0.1
Z
0.01
0.00
10
1
+ꢀ25°C
-ꢀ55°C
1
0.0001
0.00001
1
10
100
0
10
20
30
40
50
60
70
80
90
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 5. Typical Capacitance
Figure 6. Typical Leakage Current
100
10
100
10
T = 25°C
A
T = 25°C
A
1
1
0.1
0.01
0.1
0.01
10
30
50
70
90
0
2
4
6
8
10
12
V , ZENER VOLTAGE (V)
Z
V , ZENER VOLTAGE (V)
Z
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
100
PEAK VALUE I
@ 8 ms
RSM
t
r
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
P
HALF VALUE I
/2 @ 20 ms
RSM
t
P
10
0
0
20
40
60
80
t, TIME (ms)
Figure 9. 8 × 20 ms Pulse Waveform
http://onsemi.com
5
MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
−−−
MAX
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
10°
c
1
2
b
0.25
e
q
H
A
E
q
L
STYLE 8:
A1
PIN 1. ANODE
L1
VIEW C
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MMBZ5221ELT1/D
相关型号：
MMBZ5240-V-G-08
DIODE 10 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-3, Voltage Regulator Diode
VISHAY
MMBZ5240-V-G-18
DIODE 10 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-3, Voltage Regulator Diode
VISHAY
MMBZ5240-V-G-8
DIODE 10 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode
VISHAY
MMBZ5240-V-GS18
DIODE 10 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-3, Voltage Regulator Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明