MMBZ5265ELT1 [ONSEMI]
Zener Voltage Regulators; 齐纳稳压器型号: | MMBZ5265ELT1 |
厂家: | ONSEMI |
描述: | Zener Voltage Regulators |
文件: | 总6页 (文件大小:77K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMBZ5221ELT1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
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Specification Features:
3
1
Cathode
Anode
• 225 mW Rating on FR−4 or FR−5 Board
• Zener Voltage Range − 2.4 V to 91 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Peak Power − 225 W (8 x 20 ms)
3
1
2
SOT−23
CASE 318
STYLE 8
• Pb−Free Packages are Available
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
MARKING DIAGRAM
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
xxx M
xxx = Specific Device Code
MAXIMUM RATINGS
M
= Date Code
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20 ms (Note 1)
P
pk
225
W
ORDERING INFORMATION
@ T ≤ 25°C
L
†
Total Power Dissipation on FR−5 Board,
P
D
Device
MMBZ52xxELT1
Package
Shipping
(Note 2) @ T = 25°C
225
1.8
mW
mW/°C
A
SOT−23
3000/Tape & Reel
Derated above 25°C
Thermal Resistance −
Junction−to−Ambient
R
556
°C/W
MMBZ52xxELT3* SOT−23 10,000/Tape & Reel
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Total Power Dissipation on Alumina
Substrate, (Note 3) @ T = 25°C
Derated above 25°C
P
D
300
2.4
mW
mW/°C
A
*MMBZ5246EL, and MMBZ5252EL
Not Available in 10,000/Tape & Reel.
Thermal Resistance −
Junction−to−Ambient
R
417
°C/W
°C
q
JA
Junction and Storage
Temperature Range
T , T
J
−65 to
+150
stg
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
January, 2005 − Rev. 4
MMBZ5221ELT1/D
MMBZ5221ELT1 Series
ELECTRICAL CHARACTERISTICS
I
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C
A
I
F
unless otherwise noted, V = 0.95 V Max. @ I = 10 mA)
F
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
V
Z
V
R
V
I
Z
Maximum Zener Impedance @ I
Reverse Current
V
F
R
ZT
ZT
ZK
ZT
I
I
Z
ZK
Maximum Zener Impedance @ I
ZK
I
R
Reverse Leakage Current @ V
R
V
R
Reverse Voltage
I
F
Forward Current
Zener Voltage Regulator
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (V = 0.9 V Max @ I = 10 mA for all types.)
F
F
Zener Voltage (Note 4)
Zener Impedance
Leakage Current
V (V)
@ I
Z
ZT
@ I
W
Z
@ I
I @ V
R R
Z
ZT
ZT
ZK
ZK
Device
Marking
Min
2.28
3.13
3.70
4.08
4.46
4.84
5.32
5.89
6.46
7.12
7.79
8.65
9.50
11.40
12.35
13.30
14.25
15.20
17.10
19.00
Nom
2.4
3.3
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
Max
2.52
mA
W
mA
mA
V
1
1
1
1
2
2
3
4
5
6
Device
MMBZ5221ELT1G,T3G†
MMBZ5226ELT1,T3
MMBZ5228ELT1,T3
MMBZ5229ELT1,T3
MMBZ5230ELT1,T3
MMBZ5231ELT1,T3
MMBZ5232ELT1,T3
MMBZ5234ELT1,T3
MMBZ5235ELT1,T3
MMBZ5236ELT1,T3
MMBZ5237ELT1,T3
MMBZ5239ELT1,T3
MMBZ5240ELT1,T3
MMBZ5242ELT1,T3
MMBZ5243ELT1,T3
MMBZ5244ELT1,T3
MMBZ5245ELT1,T3
MMBZ5246ELT1*
BE2
BE7
BE9
BF1
BF2
BF3
BF4
BF6
BF7
BF8
BF9
BG2
BG3
BG5
BG6
BG7
BG8
BG9
BH2
BH4
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
30
28
23
22
19
17
11
7
1200
1600
1900
2000
1900
1600
1600
1000
750
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
100
25
10
5
3.47
4.10
4.52
4.94
5
5.36
5
5.88
5
6.51
5
7.14
5
3
7.88
6
500
3
8.61
8
500
3
6.5
7
9.55
10
17
30
13
15
16
17
21
25
600
3
10.50
12.60
13.65
14.70
15.75
16.80
18.90
21.00
600
3
8
12
600
1
9.1
9.9
10
11
12
14
15
13
600
0.5
0.1
0.1
0.1
0.1
0.1
14
600
15
8.5
7.8
7
600
16
600
MMBZ5248ELT1,T3
MMBZ5250ELT1,T3
18
600
20
6.2
600
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
4. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.
Z
†The “G’’ suffix indicates Pb−Free package available.
*Not Available in the 10,0000/Tape & Reel.
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2
MMBZ5221ELT1 Series
ELECTRICAL CHARACTERISTICS (continued) (Pinout: 1-Anode, 2-NC, 3-Cathode) (V = 0.9 V Max @ I = 10 mA for all types.)
F
F
Zener Voltage (Note 5)
Zener Impedance
Leakage Current
@ V
V (V)
Z
@ I
Z
ZT
@ I
Z
ZK
@ I
I
R
ZT
ZT
ZK
R
Device
Marking
Min
Nom
24
25
27
28
30
33
36
51
56
62
Max
mA
W
W
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
mA
V
Device
MMBZ5252ELT1*
MMBZ5253ELT1,T3
MMBZ5254ELT1,T3
MMBZ5255ELT1,T3
MMBZ5256ELT1,T3
MMBZ5257ELT1,T3
MMBZ5258ELT1,T3
MMBZ5262ELT1,T3
MMBZ5263ELT1,T3
MMBZ5265ELT1
BH6
BH7
BH8
BH9
BJ1
BJ2
BJ3
BJ7
BJ8
BK1
22.80
23.75
25.65
26.60
28.50
31.35
34.20
48.45
53.20
58.90
25.20
26.25
28.35
29.40
31.50
34.65
37.80
53.55
58.80
65.10
5.2
5
33
35
41
44
49
58
70
600
600
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
18
19
21
21
23
25
27
37
43
47
4.6
4.5
4.2
3.8
3.4
2.5
2.2
2
600
600
600
700
700
125
150
185
1100
1300
1400
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
5. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.
Z
*Not Available in the 10,0000/Tape & Reel.
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3
MMBZ5221ELT1 Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
100
TYPICAL T VALUES
FOR MMBZ5221BLT1 SERIES
TYPICAL T VALUES
FOR MMBZ5221BLT1 SERIES
C
C
V @ I
Z
ZT
V @ I
Z
ZT
10
2
1
0
−1
−2
−3
1
2
3
4
5
6
7
8
9
10
11 12
10
100
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 1. Temperature Coefficients
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
(Temperature Range −55°C to +150°C)
1000
100
10
1000
100
10
T = 25°C
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
J
I
= 0.1 I
Z(DC)
Z(AC)
I = 1 mA
Z
f = 1 kHz
5 mA
20 mA
75°C 25°C
0.6 0.7
0°C
150°C
0.5
1
1
1
10
V , NOMINAL ZENER VOLTAGE
100
0.4
0.8
0.9
1.0
1.1
1.2
V , FORWARD VOLTAGE (V)
F
Z
Figure 3. Effect of Zener Voltage on
Zener Impedance
Figure 4. Typical Forward Voltage
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4
MMBZ5221ELT1 Series
TYPICAL CHARACTERISTICS
1000
100
1000
T = 25°C
A
100
10
0 V BIAS
1 V BIAS
1
+150°C
BIAS AT
50% OF V NOM
0.1
0.01
0.00
Z
10
1
+ꢀ25°C
−ꢀ55°C
1
0.0001
0.00001
1
10
100
0
10
20
30
40
50
60
70
80
90
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 5. Typical Capacitance
Figure 6. Typical Leakage Current
100
10
100
10
T = 25°C
A
T = 25°C
A
1
1
0.1
0.01
0.1
0.01
10
30
50
70
90
0
2
4
6
8
10
12
V , ZENER VOLTAGE (V)
Z
V , ZENER VOLTAGE (V)
Z
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
100
PEAK VALUE I
@ 8 ms
RSM
t
r
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
P
HALF VALUE I
/2 @ 20 ms
RSM
t
P
10
0
0
20
40
60
80
t, TIME (ms)
Figure 9. 8 × 20 ms Pulse Waveform
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5
MMBZ5221ELT1 Series
PACKAGE DIMENSIONS
SOT−23
TO−236AB
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
L
3
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
S
C
B
1
2
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
G
H
J
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
V
G
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
H
J
D
K
K
L
S
V
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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For additional information, please contact your
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MMBZ5221ELT1/D
相关型号:
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