MMBZ6V8AL [ONSEMI]

24 and 40 Watt Peak Power Zener Transient Voltage Suppressors; 24和40瓦的峰值功率齐纳瞬态电压抑制器
MMBZ6V8AL
型号: MMBZ6V8AL
厂家: ONSEMI    ONSEMI
描述:

24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
24和40瓦的峰值功率齐纳瞬态电压抑制器

二极管 光电二极管 局域网
文件: 总8页 (文件大小:73K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMBZ5V6ALT1 Series  
Preferred Device  
24 and 40 Watt Peak Power  
Zener Transient Voltage  
Suppressors  
SOT−23 Dual Common Anode Zeners  
for ESD Protection  
http://onsemi.com  
These dual monolithic silicon Zener diodes are designed for  
applications requiring transient overvoltage protection capability. They  
are intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems,  
medical equipment and other applications. Their dual junction common  
anode design protects two separate lines using only one package. These  
devices are ideal for situations where board space is at a premium.  
1
2
3
MARKING  
DIAGRAM  
3
Features  
SOT−23  
CASE 318  
STYLE 12  
xxx  
Pb−Free Packages are Available  
1
SOT−23 Package Allows Either Two Separate Unidirectional  
Configurations or a Single Bidirectional Configuration  
Working Peak Reverse Voltage Range − 3 V to 26 V  
2
xxx = Device Code  
= Date Code  
M
Standard Zener Breakdown Voltage Range − 5.6 V to 33 V  
Peak Power − 24 or 40 Watts @ 1.0 ms (Unidirectional),  
per Figure 5 Waveform  
ESD Rating of Class N (exceeding 16 kV) per the Human  
Body Model  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Maximum Clamping Voltage @ Peak Pulse Current  
Low Leakage < 5.0 mA  
Flammability Rating UL 94 V−O  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the table on page 3 of this data sheet.  
Mechanical Characteristics  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
Preferred devices are recommended choices for future use  
and best overall value.  
Package designed for optimal automated board assembly  
Small package size for high density applications  
Available in 8 mm Tape and Reel  
Use the Device Number to order the 7 inch/3,000 unit reel.  
Replace the “T1” with “T3” in the Device Number to order the  
13 inch/10,000 unit reel.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 7  
MMBZ5V6ALT1/D  
MMBZ5V6ALT1 Series  
MAXIMUM RATINGS  
Rating  
Peak Power Dissipation @ 1.0 ms (Note 1) MMBZ5V6ALT1 thru MMBZ10VALT1  
@ T 25°C MMBZ12VALT1 thru MMBZ33VALT1  
Symbol  
Value  
Unit  
P
pk  
24  
40  
Watts  
L
Total Power Dissipation on FR−5 Board (Note 2) @ T = 25°C  
Derate above 25°C  
°P °  
D
225  
1.8  
°mW°  
mW/°C  
A
Thermal Resistance Junction−to−Ambient  
R
556  
°C/W  
q
JA  
Total Power Dissipation on Alumina Substrate (Note 3) @ T = 25°C  
Derate above 25°C  
°P °  
D
300  
2.4  
°mW  
mW/°C  
A
Thermal Resistance Junction−to−Ambient  
Junction and Storage Temperature Range  
Lead Solder Temperature − Maximum (10 Second Duration)  
R
417  
− 55 to +150  
260  
°C/W  
°C  
q
JA  
T , T  
J
stg  
T
°C  
L
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit  
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,  
damage may occur and reliability may be affected.  
1. Non−repetitive current pulse per Figure 5 and derate above T = 25°C per Figure 6.  
A
2. FR−5 = 1.0 x 0.75 x 0.62 in.  
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.  
*Other voltages may be available upon request.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBZ5V6ALT1  
SOT−23  
3000 Tape & Reel  
3000 Tape & Reel  
MMBZ5V6ALT1G  
SOT−23  
(Pb−Free)  
MMBZ5V6ALT3  
SOT−23  
10,000 Tape & Reel  
10,000 Tape & Reel  
MMBZ5V6ALT3G  
SOT−23  
(Pb−Free)  
MMBZ6VxALT1  
SOT−23  
3000 Tape & Reel  
3000 Tape & Reel  
MMBZ6VxALT1G  
SOT−23  
(Pb−Free)  
MMBZ6VxALT3  
SOT−23  
10,000 Tape & Reel  
10,000 Tape & Reel  
MMBZ6VxALT3G  
SOT−23  
(Pb−Free)  
MMBZ9V1ALT1  
SOT−23  
3000 Tape & Reel  
3000 Tape & Reel  
MMBZ9V1ALT1G  
SOT−23  
(Pb−Free)  
MMBZ9V1ALT3  
SOT−23  
10,000 Tape & Reel  
10,000 Tape & Reel  
MMBZ9V1ALT13G  
SOT−23  
(Pb−Free)  
MMBZxxVALT1  
SOT−23  
3000 Tape & Reel  
3000 Tape & Reel  
MMBZxxVALT1G  
SOT−23  
(Pb−Free)  
MMBZxxVALT3  
SOT−23  
10,000 Tape & Reel  
10,000 Tape & Reel  
MMBZxxVALT3G  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
2
 
MMBZ5V6ALT1 Series  
ELECTRICAL CHARACTERISTICS  
I
(T = 25°C unless otherwise noted)  
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)  
A
I
F
Symbol  
Parameter  
I
PP  
Maximum Reverse Peak Pulse Current  
V
C
Clamping Voltage @ I  
PP  
V
C
V
V
BR RWM  
V
I
V
F
V
RWM  
Working Peak Reverse Voltage  
R
T
I
I
R
Maximum Reverse Leakage Current @ V  
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
I
T
I
PP  
QV  
Maximum Temperature Coefficient of V  
Forward Current  
BR  
BR  
I
F
Uni−Directional TVS  
V
F
Forward Voltage @ I  
F
Z
Maximum Zener Impedance @ I  
Reverse Current  
ZT  
ZT  
I
ZK  
Z
ZK  
Maximum Zener Impedance @ I  
ZK  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)  
(VF = 0.9 V Max @ IF = 10 mA)  
24 WATTS  
Max Zener  
V @ I  
C PP  
Impedance (Note 5)  
(Note 6)  
Breakdown Voltage  
Z
@ I  
I
V
@
RWM  
mA  
ZT  
R
V
(Note 4) (V)  
@ I  
Z
ZK  
@ I  
V
C
I
PP  
V
RWM  
ZT  
QV  
BR  
BR  
T
ZK  
Device  
mV/5C  
1.26  
2.80  
3.4  
Volts  
3.0  
Min  
Nom  
5.6  
6.2  
6.8  
9.1  
10  
Max  
5.88  
6.51  
7.14  
9.56  
10.5  
mA  
20  
W
11  
W
mA  
1600 0.25  
V
A
Marking  
Device  
MMBZ5V6AL  
MMBZ6V2AL  
MMBZ6V8AL  
MMBZ9V1AL  
MMBZ10VAL  
5A6  
6A2  
6A8  
9A1  
10A  
5.0  
0.5  
0.5  
0.3  
0.3  
5.32  
5.89  
6.46  
8.65  
9.50  
8.0  
3.0  
3.0  
1.0  
1.0  
1.0  
1.0  
8.7 2.76  
4.5  
9.6  
14  
2.5  
1.7  
6.0  
7.5  
6.5  
14.2 1.7  
7.5  
(VF = 0.9 V Max @ IF = 10 mA)  
40 WATTS  
Breakdown Voltage  
V
V
@ I (Note 6)  
C
PP  
I
V
@
RWM  
nA  
R
V
(Note 4) (V)  
@ I  
I
PP  
V
RWM  
QV  
BR  
BR  
T
C
Device  
mV/5C  
Volts  
8.5  
12  
Min  
Nom  
12  
Max  
mA  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
V
A
Marking  
Device  
MMBZ12VAL  
MMBZ15VAL  
MMBZ18VAL  
MMBZ20VAL  
MMBZ27VAL  
MMBZ33VAL  
12A  
15A  
18A  
20A  
27A  
33A  
200  
50  
50  
50  
50  
50  
11.40  
14.25  
17.10  
19.00  
25.65  
31.35  
12.60  
15.75  
18.90  
21.00  
28.35  
34.65  
17  
21  
25  
28  
40  
46  
2.35  
1.9  
7.5  
15  
12.3  
15.3  
17.2  
24.3  
30.4  
14.5  
17  
18  
1.6  
20  
1.4  
22  
27  
1.0  
26  
33  
0.87  
4. V measured at pulse test current I at an ambient temperature of 25°C.  
BR  
T
5. Z and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I  
ZT  
ZK  
Z(AC)  
= 0.1 I , with the AC frequency = 1.0 kHz.  
Z(DC)  
6. Surge current waveform per Figure 5 and derate per Figure 6  
http://onsemi.com  
3
 
MMBZ5V6ALT1 Series  
TYPICAL CHARACTERISTICS  
18  
15  
12  
9
1000  
100  
10  
1
6
3
0
0.1  
0.01  
40  
0
+50  
+100  
+150  
40  
+25  
+85  
+125  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 1. Typical Breakdown Voltage  
versus Temperature  
Figure 2. Typical Leakage Current  
versus Temperature  
(Upper curve for each voltage is bidirectional mode,  
lower curve is unidirectional mode)  
320  
300  
280  
240  
200  
160  
120  
80  
250  
200  
ALUMINA SUBSTRATE  
5.6 V  
150  
100  
50  
15 V  
FR−5 BOARD  
40  
0
0
0
1
2
3
0
25  
50  
75  
100  
125  
150  
175  
BIAS (V)  
TEMPERATURE (°C)  
Figure 3. Typical Capacitance versus Bias Voltage  
(Upper curve for each voltage is unidirectional mode,  
lower curve is bidirectional mode)  
Figure 4. Steady State Power Derating Curve  
http://onsemi.com  
4
MMBZ5V6ALT1 Series  
TYPICAL CHARACTERISTICS  
100  
PULSE WIDTH (t ) IS DEFINED  
P
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
AS THAT POINT WHERE THE  
PEAK CURRENT DECAYS TO  
t 10 ms  
r
50% OF I .  
PP  
100  
PEAK VALUE − I  
PP  
I
PP  
HALF VALUE −  
2
50  
0
t
P
0
1
2
3
4
0
25  
50  
75  
100  
125  
150 175 200  
t, TIME (ms)  
T , AMBIENT TEMPERATURE (°C)  
A
Figure 5. Pulse Waveform  
MMBZ5V6ALT1  
Figure 6. Pulse Derating Curve  
MMBZ5V6ALT1  
100  
100  
10  
1
RECTANGULAR  
WAVEFORM, T = 25°C  
RECTANGULAR  
WAVEFORM, T = 25°C  
A
A
BIDIRECTIONAL  
BIDIRECTIONAL  
10  
UNIDIRECTIONAL  
UNIDIRECTIONAL  
1
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
1000  
PW, PULSE WIDTH (ms)  
PW, PULSE WIDTH (ms)  
Figure 7. Maximum Non−repetitive Surge  
Power, Ppk versus PW  
Figure 8. Maximum Non−repetitive Surge  
Power, Ppk(NOM) versus PW  
Power is defined as V  
x I (pk) where V  
is  
Power is defined as V (NOM) x I (pk) where  
Z Z  
RSM  
Z
RSM  
the clamping voltage at I (pk).  
V (NOM) is the nominal Zener voltage measured at  
Z
Z
the low test current used for voltage classification.  
http://onsemi.com  
5
MMBZ5V6ALT1 Series  
TYPICAL COMMON ANODE APPLICATIONS  
A quad junction common anode design in a SOT−23  
package protects four separate lines using only one package.  
This adds flexibility and creativity to PCB design especially  
when board space is at a premium. Two simplified examples  
of TVS applications are illustrated below.  
Computer Interface Protection  
A
B
C
D
KEYBOARD  
TERMINAL  
PRINTER  
ETC.  
FUNCTIONAL  
DECODER  
I/O  
GND  
MMBZ5V6ALT1  
THRU  
MMBZ33VALT1  
Microprocessor Protection  
V
V
DD  
GG  
ADDRESS BUS  
RAM  
ROM  
DATA BUS  
CPU  
MMBZ5V6ALT1  
THRU  
I/O  
MMBZ33VALT1  
CLOCK  
CONTROL BUS  
GND  
MMBZ5V6ALT1  
THRU  
MMBZ33VALT1  
http://onsemi.com  
6
MMBZ5V6ALT1 Series  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−09  
ISSUE AH  
NOTES:  
A
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
L
2. CONTROLLING DIMENSION: INCH.  
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS OF  
BASE MATERIAL.  
3
B
S
1
2
4. 318−01, −02, AND −06 OBSOLETE, NEW  
STANDARD 318−09.  
INCHES  
MIN  
MILLIMETERS  
DIM  
A
B
C
D
G
H
J
MAX  
0.1197  
0.0551  
0.0498  
0.0200  
0.0826  
0.0098  
0.0070  
0.0236  
0.0401  
0.0984  
0.0236  
MIN  
2.80  
1.20  
0.99  
0.36  
1.70  
0.10  
0.085  
0.45  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.26  
0.50  
2.10  
0.25  
0.177  
0.60  
1.02  
2.50  
0.60  
V
G
0.1102  
0.0472  
0.0385  
0.0140  
0.0670  
0.0040  
0.0034  
0.0180  
0.0350  
0.0830  
0.0177  
C
J
H
K
D
K
L
S
V
STYLE 12:  
PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
0.8  
0.031  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
7
MMBZ5V6ALT1 Series  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
MMBZ5V6ALT1/D  

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