MMBZ9V1ALT3G [ONSEMI]
DIODE 24 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236, LEAD FREE, PLASTIC, CASE 318-08, 3 PIN, Transient Suppressor;
| 型号： | MMBZ9V1ALT3G |
| 厂家： | 
ONSEMI |
| 描述： | DIODE 24 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236, LEAD FREE, PLASTIC, CASE 318-08, 3 PIN, Transient Suppressor 光电二极管 电视 |
| 文件： | 总7页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBZ5V6ALT1 Series
24 and 40 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT−23 Dual Common Anode Zeners
for ESD Protection
http://onsemi.com
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
1
2
3
MARKING
DIAGRAM
3
Features
SOT−23
CASE 318
STYLE 12
xxxMG
• SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Working Peak Reverse Voltage Range − 3 V to 26 V
G
1
1
2
• Standard Zener Breakdown Voltage Range − 5.6 V to 33 V
xxx = Specific Device Code
M
= Date Code
= Pb−Free Package
• Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional),
G
per Figure 6 Waveform
(Note: Microdot may be in either location)
• ESD Rating:
− Class 3B (>16 kV) per the Human Body Model
− Class C (>400 V) per the Machine Model
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage < 5.0 mA
• Flammability Rating UL 94 V−0
• Pb−Free Packages are Available
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
October, 2009 − Rev. 10
MMBZ5V6ALT1/D
MMBZ5V6ALT1 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 1.0 ms (Note 1) MMBZ5V6ALT1 thru MMBZ9V1ALT1
@ T ≤ 25°C MMBZ12VALT1 thru MMBZ33VALT1
Symbol
Value
Unit
P
pk
24
40
W
L
Total Power Dissipation on FR−5 Board (Note 2) @ T = 25°C
°P °
D
225
1.8
°mW°
mW/°C
A
Derate above 25°C
Thermal Resistance Junction−to−Ambient
R
556
°C/W
q
JA
Total Power Dissipation on Alumina Substrate (Note 3) @ T = 25°C
°P °
D
300
2.4
°mW
mW/°C
A
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature Range
Lead Solder Temperature − Maximum (10 Second Duration)
R
417
− 55 to +150
260
°C/W
°C
q
JA
T , T
J
stg
T
°C
L
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non−repetitive current pulse per Figure 6 and derate above T = 25°C per Figure 7.
A
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBZ5V6ALT1
SOT−23
3000 Tape & Reel
3000 Tape & Reel
MMBZ5V6ALT1G
SOT−23
(Pb−Free)
MMBZ5V6ALT3
SOT−23
10,000 Tape & Reel
10,000 Tape & Reel
MMBZ5V6ALT3G
SOT−23
(Pb−Free)
MMBZ6VxALT1
SOT−23
3000 Tape & Reel
3000 Tape & Reel
MMBZ6VxALT1G
SOT−23
(Pb−Free)
MMBZ6VxALT3
SOT−23
10,000 Tape & Reel
10,000 Tape & Reel
MMBZ6VxALT3G
SOT−23
(Pb−Free)
MMBZ9V1ALT1
SOT−23
3000 Tape & Reel
3000 Tape & Reel
MMBZ9V1ALT1G
SOT−23
(Pb−Free)
MMBZ9V1ALT3
SOT−23
10,000 Tape & Reel
10,000 Tape & Reel
MMBZ9V1ALT13G
SOT−23
(Pb−Free)
MMBZxxVALT1
SOT−23
3000 Tape & Reel
3000 Tape & Reel
MMBZxxVALT1G
SOT−23
(Pb−Free)
MMBZxxVALT3
SOT−23
10,000 Tape & Reel
10,000 Tape & Reel
MMBZxxVALT3G
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MMBZ5V6ALT1 Series
ELECTRICAL CHARACTERISTICS
I
(T = 25°C unless otherwise noted)
A
I
F
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
Clamping Voltage @ I
PP
C
V
C
V
V
BR RWM
V
I
V
F
V
Working Peak Reverse Voltage
R
T
RWM
I
I
R
Maximum Reverse Leakage Current @ V
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
I
PP
QV
Maximum Temperature Coefficient of V
BR
BR
I
F
Forward Current
Uni−Directional TVS
V
F
Forward Voltage @ I
F
Z
Maximum Zener Impedance @ I
Reverse Current
ZT
ZT
I
ZK
Z
ZK
Maximum Zener Impedance @ I
ZK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
24 WATTS
Max Zener
V @ I
C PP
Impedance (Note 5)
(Note 6)
Breakdown Voltage
Z
@ I
I
V
@
RWM
mA
ZT
R
V
(Note 4) (V)
@ I
Z
ZK
@ I
V
C
I
PP
V
RWM
ZT
QV
BR
BR
T
ZK
Device
mV/5C
1.26
2.80
3.4
Volts
3.0
Min
Nom
5.6
Max
5.88
6.51
7.14
9.56
mA
20
W
11
−
W
mA
1600 0.25
V
A
Marking
Device
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
5A6
6A2
6A8
9A1
5.0
0.5
0.5
0.3
5.32
5.89
6.46
8.65
8.0
3.0
3.0
6.2
1.0
1.0
1.0
−
−
−
−
−
−
8.7 2.76
4.5
6.8
−
9.6
14
2.5
1.7
6.0
9.1
−
7.5
(VF = 0.9 V Max @ IF = 10 mA)
40 WATTS
Breakdown Voltage
V
V
@ I (Note 6)
C
PP
I
V
@
RWM
nA
R
V
(Note 4) (V)
@ I
I
PP
V
RWM
QV
BR
BR
T
C
Device
mV/5C
Volts
8.5
12
Min
Nom
12
Max
mA
1.0
1.0
1.0
1.0
1.0
1.0
V
A
Marking
Device
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
12A
15A
18A
20A
27A
33A
200
50
50
50
50
50
11.40
14.25
17.10
19.00
25.65
31.35
12.60
15.75
18.90
21.00
28.35
34.65
17
21
25
28
40
46
2.35
1.9
7.5
15
12.3
15.3
17.2
24.3
30.4
14.5
17
18
1.6
20
1.4
22
27
1.0
26
33
0.87
4. V measured at pulse test current I at an ambient temperature of 25°C.
BR
T
5. Z and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I
ZT
= 0.1 I
ZK
Z(AC)
, with the AC frequency = 1.0 kHz.
Z(DC)
6. Surge current waveform per Figure 6 and derate per Figure 7
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3
MMBZ5V6ALT1 Series
TYPICAL CHARACTERISTICS
18
15
12
9
1000
100
10
1
6
3
0
0.1
0.01
−40
0
+50
+100
+150
−40
+25
+85
+125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 1. Typical Breakdown Voltage
versus Temperature
Figure 2. Typical Leakage Current
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
320
60
280
240
200
160
120
80
50
40
30
20
10
0
27 V
5.6 V
15 V
33 V
40
0
0
1
2
3
0
1
2
3
BIAS (V)
BIAS (V)
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
Figure 4. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
300
250
ALUMINA SUBSTRATE
200
150
100
50
FR−5 BOARD
0
0
25
50
75
100
125
150
175
TEMPERATURE (°C)
Figure 5. Steady State Power Derating Curve
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4
MMBZ5V6ALT1 Series
TYPICAL CHARACTERISTICS
100
PULSE WIDTH (t ) IS DEFINED
P
90
80
70
60
50
40
30
20
10
0
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
t ≤ 10 ms
r
50% OF I .
PP
100
PEAK VALUE − I
PP
I
PP
HALF VALUE −
2
50
0
t
P
0
1
2
3
4
0
25
50
75
100
125
150 175 200
t, TIME (ms)
T , AMBIENT TEMPERATURE (°C)
A
Figure 6. Pulse Waveform
MMBZ5V6ALT1
Figure 7. Pulse Derating Curve
MMBZ5V6ALT1
100
100
10
1
RECTANGULAR
WAVEFORM, T = 25°C
RECTANGULAR
WAVEFORM, T = 25°C
A
A
BIDIRECTIONAL
BIDIRECTIONAL
10
UNIDIRECTIONAL
UNIDIRECTIONAL
1
0.1
1
10
100
1000
0.1
1
10
100
1000
PW, PULSE WIDTH (ms)
PW, PULSE WIDTH (ms)
Figure 8. Maximum Non−repetitive Surge
Figure 9. Maximum Non−repetitive Surge
Power, Ppk versus PW
Power, Ppk(NOM) versus PW
Power is defined as V
x I (pk) where V
is
Power is defined as V (NOM) x I (pk) where
Z Z
RSM
Z
RSM
the clamping voltage at I (pk).
V (NOM) is the nominal Zener voltage measured at
Z
Z
the low test current used for voltage classification.
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5
MMBZ5V6ALT1 Series
TYPICAL COMMON ANODE APPLICATIONS
A quad junction common anode design in a SOT−23
package protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. Two simplified examples
of TVS applications are illustrated below.
Computer Interface Protection
A
B
C
D
KEYBOARD
TERMINAL
PRINTER
ETC.
FUNCTIONAL
DECODER
I/O
GND
MMBZ5V6ALT1
THRU
MMBZ33VALT1
Microprocessor Protection
V
V
DD
GG
ADDRESS BUS
RAM
ROM
DATA BUS
CPU
MMBZ5V6ALT1
THRU
I/O
MMBZ33VALT1
CLOCK
CONTROL BUS
GND
MMBZ5V6ALT1
THRU
MMBZ33VALT1
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6
MMBZ5V6ALT1 Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
D
SEE VIEW C
3
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
H
E
E
MILLIMETERS
INCHES
c
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
1
2
b
0.25
e
q
A
L1
H
E
L
A1
STYLE 12:
L1
VIEW C
PIN 1. CATHODE
2. CATHODE
3. ANODE
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
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Order Literature: http://www.onsemi.com/orderlit
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Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MMBZ5V6ALT1/D
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