MMBZXXXALT1G [ONSEMI]
Zener Diodes, 24 and 40 Watt Peak Power;
| 型号： | MMBZXXXALT1G |
| 厂家： | 
ONSEMI |
| 描述： | Zener Diodes, 24 and 40 Watt Peak Power |
| 文件： | 总8页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBZxxxALT1G Series,
SZMMBZxxxALT1G Series
Zener Diodes, 24 and
40 Watt Peak Power
SOT−23 Dual Common Anode Zeners
www.onsemi.com
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
SOT−23
CASE 318
STYLE 12
Features
• SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Standard Zener Breakdown Voltage Range − 5.6 V to 47 V
CATHODE 1
CATHODE 2
3 ANODE
• Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional),
per Figure 6 Waveform
MARKING DIAGRAM
• ESD Rating:
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
• ESD Rating of IEC61000−4−2 Level 4, 30 kV Contact Discharge
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage < 5.0 mA
XXXMG
G
1
• Flammability Rating UL 94 V−0
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
• These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
© Semiconductor Components Industries, LLC, 1996
1
Publication Order Number:
August, 2016 − Rev. 20
MMBZ5V6ALT1/D
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1)
MMBZ5V6ALT1G thru MMBZ9V1ALT1G
MMBZ12VALT1G thru MMBZ47VALT1G
P
pk
24
40
W
@ T ≤ 25°C
L
Total Power Dissipation on FR−5 Board (Note 2)
°P °
D
@ T = 25°C
225
1.8
mW°
mW/°C
A
Derate above 25°C
Thermal Resistance Junction−to−Ambient
R
556
°C/W
q
JA
Total Power Dissipation on Alumina Substrate (Note 3)
°P °
D
@ T = 25°C
300
2.4
°mW
mW/°C
A
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature Range
Lead Solder Temperature − Maximum (10 Second Duration)
R
417
− 55 to +150
260
°C/W
°C
q
JA
T , T
J
stg
T
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 6 and derate above T = 25°C per Figure 7.
A
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBZ5V6ALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZMMBZ5V6ALT1G*
MMBZ5V6ALT3G
MMBZ6VxALT1G
SZMMBZ6VxALT1G*
MMBZ6VxALT3G
MMBZ9V1ALT1G
MMBZ9V1ALT13G
MMBZxxVALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SZMMBZxxVALT1G*
MMBZxxVALT3G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SZMMBZxxVALT3G*
SZMMBZxxVTALT1G*
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
www.onsemi.com
2
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
I
Symbol
Parameter
I
F
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
C
V
V
BR RWM
V
V
Breakdown Voltage @ I
Test Current
BR
T
I
V
F
R
T
I
I
T
QV
Maximum Temperature Coefficient of V
Forward Current
BR
BR
I
F
V
Forward Voltage @ I
F
F
I
PP
Z
ZT
Maximum Zener Impedance @ I
Reverse Current
ZT
I
ZK
Uni−Directional Zener
Z
ZK
Maximum Zener Impedance @ I
ZK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V = 0.9 V Max @ I = 10 mA) (5% Tolerance)
24 WATTS
F
F
Max Zener
V @ I
C PP
Impedance (Note 5)
(Note 6)
Breakdown Voltage
Z
@ I
I
V
@
RWM
mA
ZT
R
V
(Note 4) (V)
@ I
Z
ZK
@ I
V
C
I
PP
V
RWM
ZT
QV
BR
BR
T
ZK
Device
mV/5C
Volts
3.0
Min
Nom
5.6
Max
5.88
6.51
7.14
9.56
mA
20
W
11
−
W
mA
V
A
Marking
Device*
MMBZ5V6ALT1G/T3G
MMBZ6V2ALT1G
MMBZ6V8ALT1G
MMBZ9V1ALT1G
5A6
6A2
6A8
9A1
5.0
0.5
0.5
0.3
5.32
5.89
6.46
8.65
1600 0.25
8.0
3.0
1.26
2.80
3.4
3.0
6.2
1.0
1.0
1.0
−
−
−
−
−
−
8.7 2.76
4.5
6.8
−
9.6
14
2.5
1.7
6.0
9.1
−
7.5
(V = 0.9 V Max @ I = 10 mA) (5% Tolerance)
40 WATTS
F
F
Breakdown Voltage
V
V
@ I (Note 6)
C
PP
I
V
@
RWM
nA
R
V
(Note 4) (V)
@ I
I
PP
V
RWM
QV
BR
T
C
BR
Device
mV/5C
Volts
8.5
12
Min
Nom
12
Max
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
V
A
Marking
Device*
MMBZ12VALT1G
MMBZ15VALT1G
MMBZ16VALT1G
MMBZ18VALT1G
MMBZ20VALT1G
12A
15A
16A
18A
20A
27A
33A
47A
200
50
50
50
50
50
50
50
11.40
14.25
15.20
17.10
19.00
25.65
31.35
44.65
12.60
15.75
16.80
18.90
21.00
28.35
34.65
49.35
17
21
23
25
28
40
46
54
2.35
1.9
7.5
15
12.3
13.8
15.3
17.2
24.3
30.4
43.1
13
16
1.7
14.5
17
18
1.6
20
1.4
MMBZ27VALT1G/T3G
MMBZ33VALT1G
MMBZ47VALT1G
22
27
1.0
26
33
0.87
0.74
38
47
(V = 0.9 V Max @ I = 10 mA) (2% Tolerance)
40 WATTS
F
F
Breakdown Voltage
(Note 4) (V)
V
V
@ I (Note 6)
C
PP
I
V
@
RWM
nA
R
V
@ I
I
PP
V
QV
BR
T
C
RWM
BR
Device
Marking
mV/5C
13.8
Volts
13
Min
Nom
16
Max
16.32
47.94
mA
1.0
1.0
V
A
Device*
MMBZ16VTALT1G
MMBZ47VTALT1G
16T
47T
50
50
15.68
46.06
23
54
1.7
38
47
0.74
43.1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. V measured at pulse test current I at an ambient temperature of 25°C.
BR
T
5. Z and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I
ZT
ZK
Z(AC)
= 0.1 I , with the AC frequency = 1.0 kHz.
Z(DC)
6. Surge current waveform per Figure 6 and derate per Figure 7
* Include SZ-prefix devices where applicable.
www.onsemi.com
3
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
TYPICAL CHARACTERISTICS
18
15
12
9
1000
100
10
1
6
3
0
0.1
0.01
−40
0
+50
+100
+150
−40
+25
+85
+125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 1. Typical Breakdown Voltage
versus Temperature
Figure 2. Typical Leakage Current
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
320
60
280
240
200
160
120
80
50
40
30
20
10
0
27 V
5.6 V
15 V
33 V
40
0
0
1
2
3
0
1
2
3
BIAS (V)
BIAS (V)
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
Figure 4. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
300
250
ALUMINA SUBSTRATE
200
150
100
50
FR−5 BOARD
0
0
25
50
75
100
125
150
175
TEMPERATURE (°C)
Figure 5. Steady State Power Derating Curve
www.onsemi.com
4
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
TYPICAL CHARACTERISTICS
100
PULSE WIDTH (t ) IS DEFINED
P
90
80
70
60
50
40
30
20
10
0
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
t ≤ 10 ms
r
50% OF I .
PP
100
PEAK VALUE − I
PP
I
PP
HALF VALUE −
2
50
0
t
P
0
1
2
3
4
0
25
50
75
100
125
150 175 200
t, TIME (ms)
T , AMBIENT TEMPERATURE (°C)
A
Figure 6. Pulse Waveform
Figure 7. Pulse Derating Curve
100
100
10
1
RECTANGULAR
WAVEFORM, T = 25°C
RECTANGULAR
WAVEFORM, T = 25°C
A
A
BIDIRECTIONAL
BIDIRECTIONAL
10
UNIDIRECTIONAL
UNIDIRECTIONAL
1
0.1
1
10
100
1000
0.1
1
10
100
1000
PW, PULSE WIDTH (ms)
PW, PULSE WIDTH (ms)
Figure 8. Maximum Non−repetitive Surge
Power, Ppk versus PW
Figure 9. Maximum Non−repetitive Surge
Power, Ppk(NOM) versus PW
Power is defined as V
x I (pk) where V
is
Power is defined as V (NOM) x I (pk) where
Z Z
RSM
Z
RSM
the clamping voltage at I (pk).
V (NOM) is the nominal Zener voltage measured at
Z
Z
the low test current used for voltage classification.
www.onsemi.com
5
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
TYPICAL COMMON ANODE APPLICATIONS
A dual junction common anode design in a SOT−23
package protects two separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. Two simplified examples
of ESD applications are illustrated below.
Computer Interface Protection
A
B
C
D
KEYBOARD
TERMINAL
PRINTER
ETC.
FUNCTIONAL
DECODER
I/O
GND
MMBZ5V6ALT1G
THRU
MMBZ47VALT1G
Microprocessor Protection
V
V
DD
GG
ADDRESS BUS
RAM
ROM
DATA BUS
CPU
MMBZ5V6ALT1G
THRU
I/O
MMBZ47VALT1G
CLOCK
CONTROL BUS
GND
MMBZ5V6ALT1G
THRU
MMBZ47VALT1G
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
ON Semiconductor Website: www.onsemi.com
◊
www.onsemi.com
©2020 ICPDF网 联系我们和版权申明