MMSZ39ET3 [ONSEMI]
39V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, CASE 425-04, 2 PIN;
| 型号： | MMSZ39ET3 |
| 厂家： | 
ONSEMI |
| 描述： | 39V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, CASE 425-04, 2 PIN |
| 文件： | 总7页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMSZxxxET1 Series,
SZMMSZxxxET1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
http://onsemi.com
Specification Features
1
2
Cathode
Anode
• 500 mW Rating on FR−4 or FR−5 Board
• Wide Zener Reverse Voltage Range − 2.4 V to 56 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Peak Power − 225 W (8 X 20 ms)
2
1
• AEC−Q101 Qualified and PPAP Capable
• SZ Prefix for Automotive and Other Applications Requiring Unique
SOD−123
CASE 425
STYLE 1
Site and Control Change Requirements
• Pb−Free Packages are Available
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MARKING DIAGRAM
xxx MG
1
G
xxx = Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20 ms (Note 1)
P
pk
225
W
@ T ≤ 25°C
ORDERING INFORMATION
L
†
Total Power Dissipation on FR−5 Board,
P
D
Device
Package
Shipping
(Note 2) @ T = 75°C
500
6.7
mW
L
MMSZxxxET1
SOD−123
(Pb−Free)
3000 / Tape &
Reel
Derated above 75°C
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 3)
R
340
°C/W
°C/W
°C
q
JA
SZMMSZxxxET1G SOD−123
(Pb−Free)
3000 / Tape &
Reel
Thermal Resistance, Junction−to−Lead
(Note 3)
R
q
JL
150
MMSZxxxET3
SOD−123
(Pb−Free)
10,000 / Tape &
Reel
Junction and Storage Temperature Range T , T
−55 to +150
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2. FR−5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint
3. Thermal Resistance measurement obtained via infrared Scan Method
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
November, 2011 − Rev. 6
MMSZ2V4ET1/D
MMSZxxxET1 Series, SZMMSZxxxET1G Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless
A
I
otherwise noted, V = 0.95 V Max. @ I = 10 mA)
F
F
I
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
V
Z
V
R
Z
Maximum Zener Impedance @ I
ZT
ZT
V
I
V
F
R
ZT
I
Reverse Leakage Current @ V
I
R
R
V
Reverse Voltage
Forward Current
R
I
F
V
F
Forward Voltage @ I
F
Zener Voltage Regulator
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2
MMSZxxxET1 Series, SZMMSZxxxET1G Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA)
A
F
F
V
Z1
(V)
Z
ZT1
V
Z2
(V)
Z
ZT2
Max Reverse
(Notes 4 and 5)
(Note 6)
(Notes 4 and 5)
(Note 6)
Leakage Current
@ I
Nom
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
= 5 mA
Max
@ I = 1 mA
I @ V
R R
ZT1
ZT2
Device
Marking
Min
2.28
W
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
Min
1.7
Max
W
mA
V
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
Device
MMSZ2V4ET1, G
MMSZ2V7ET1, G
MMSZ3V0ET1
MMSZ3V3ET1, G
MMSZ3V6ET1, G
MMSZ3V9ET1, G
MMSZ4V3ET1
MMSZ4V7ET1
MMSZ5V1ET1, G
MMSZ5V6ET1
MMSZ6V2ET1
MMSZ6V8ET1
MMSZ7V5ET1
MMSZ8V2ET1
MMSZ9V1ET1
MMSZ10ET1, G
MMSZ11ET1
CL1
CL2
CL3
CL4
CL5
CL6
CL7
CL8
CL9
CM1
CM2
CM3
CM4
CM5
CM6
CM7
CM8
CM9
CN1
CN2
CN3
CN4
CN5
CN6
CN7
2.52
2.1
2.4
600
600
600
600
600
600
600
500
480
400
150
80
50
20
10
5
2.57
2.84
1.9
2.85
3.15
2.1
2.7
3.14
3.47
2.3
2.9
3.42
3.78
2.7
3.3
5
3.71
4.10
2.9
3.5
3
4.09
4.52
3.3
4.0
3
4.47
4.94
3.7
4.7
3
4.85
5.36
4.2
5.3
2
5.32
5.88
4.8
6.0
1
5.89
6.51
5.6
6.6
3
6.46
7.14
6.3
7.2
2
7.13
7.88
6.9
7.9
80
1
7.79
8.61
7.6
8.7
80
0.7
0.5
0.2
0.1
0.1
0.1
8.65
9.56
8.4
9.6
100
150
150
150
170
200
200
225
225
250
250
9.50
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
9.3
10.6
11.6
12.7
14.0
15.5
17.0
19.0
21.1
23.2
25.5
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
11
10.2
11.2
12.3
13.7
15.2
16.7
18.7
20.7
22.7
MMSZ12ET1, G
MMSZ13ET1
12
13
MMSZ15ET1, G
MMSZ16ET1, G
SZ/MMSZ18ET1, G
MMSZ20ET1, G
MMSZ22ET1, G
MMSZ24ET1
15
0.05
0.05
0.05
0.05
0.05
0.05
10.5
11.2
12.6
14
16
18
20
22
15.4
16.8
24
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage.
5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
6. Z and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
ZT
Z(AC)
ZK
= 0.1 I
I
with the AC frequency = 1 kHz.
Z(DC),
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
* The “G” suffix indicates Pb−Free package available.
http://onsemi.com
3
MMSZxxxET1 Series, SZMMSZxxxET1G Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA)
A
F
F
V
Z1
(V)
Z
ZT1
V
Z2
(V)
Z
ZT2
Max Reverse
(Notes 7 and 8)
(Note 9)
(Notes 7 and 8)
(Note 9)
Leakage Current
@ I
=
ZT2
0.5 mA
@ I
Nom
27
= 2 mA
Max
@ I
= 0.1 mA
Max
28.9
32
I @ V
R R
ZT1
ZT2
Device
Marking
Min
W
Min
W
mA
V
Device
MMSZ27ET1, G
MMSZ30ET1
MMSZ33ET1
MMSZ36ET1
MMSZ39ET1
MMSZ43ET1, G
MMSZ47ET1
MMSZ51ET1
MMSZ56ET1
CN8
CN9
CP1
CP2
CP3
CP4
CP5
CP6
CP7
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
80
25
300
300
325
350
350
375
375
400
425
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
18.9
21
30
80
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
33
80
35
23.1
25.2
27.3
30.1
32.9
35.7
39.2
36
90
38
39
130
150
170
180
200
41
43
46
47
50
51
54
56
60
7. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage.
8. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
9. Z and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
ZT
Z(AC)
ZK
= 0.1 I
I
with the AC frequency = 1 kHz.
Z(DC),
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
* The “G” suffix indicates Pb−Free package available.
http://onsemi.com
4
MMSZxxxET1 Series, SZMMSZxxxET1G Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
100
TYPICAL T VALUES
FOR MMSZxxxT1 SERIES,
SZMMSZxxxT1G SERIES
C
TYPICAL T VALUES
FOR MMSZxxxT1 SERIES,
SZMMSZxxxT1G SERIES
C
V @ I
Z
ZT
V @ I
Z
ZT
10
2
1
0
−1
−2
1
−3
2
3
4
5
6
7
8
9
10 11
12
10
100
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 1. Temperature Coefficients
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
(Temperature Range −55°C to +150°C)
1.2
1.0
0.8
0.6
1000
100
10
RECTANGULAR
WAVEFORM, T = 25°C
A
P
versus T
L
D
P
D
versus T
A
0.4
0.2
0
1
0
25
50
75
100
125
150
0.1
1
10
100
1000
T, TEMPERATURE (°C)
PW, PULSE WIDTH (ms)
Figure 3. Steady State Power Derating
Figure 4. Maximum Nonrepetitive Surge Power
1000
100
10
1000
100
10
T = 25°C
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
J
I
= 0.1 I
Z(AC)
Z(DC)
f = 1 kHz
I = 1 mA
Z
5 mA
20 mA
150°C
25°C
0°C
75°C
1
1
1
10
V , NOMINAL ZENER VOLTAGE
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V , FORWARD VOLTAGE (V)
Z
F
Figure 5. Effect of Zener Voltage on
Zener Impedance
Figure 6. Typical Forward Voltage
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5
MMSZxxxET1 Series, SZMMSZxxxET1G Series
TYPICAL CHARACTERISTICS
1000
100
1000
T = 25°C
A
0 V BIAS
1 V BIAS
100
10
1
+150°C
BIAS AT
50% OF V NOM
0.1
0.01
Z
10
1
+25°C
−55°C
0.001
0.0001
0.00001
1
10
100
0
10
20
30
40
50
60
70
80
90
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 7. Typical Capacitance
Figure 8. Typical Leakage Current
100
10
100
10
T = 25°C
A
T = 25°C
A
1
1
0.1
0.01
0.1
0.01
10
30
50
70
90
0
2
4
6
8
10
12
V , ZENER VOLTAGE (V)
Z
V , ZENER VOLTAGE (V)
Z
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
100
PEAK VALUE I
@ 8 ms
RSM
t
r
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
P
HALF VALUE I
/2 @ 20 ms
RSM
t
P
10
0
0
20
40
60
80
t, TIME (ms)
Figure 11. 8 × 20 ms Pulse Waveform
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6
MMSZxxxET1 Series, SZMMSZxxxET1G Series
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
1
MILLIMETERS
INCHES
DIM MIN
NOM
1.17
0.05
0.61
---
MAX
1.35
0.10
0.71
0.15
1.80
2.84
3.86
---
MIN
0.037
0.000
0.020
---
NOM
0.046
0.002
0.024
---
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
---
A
A1
b
0.94
0.00
0.51
---
H
E
E
c
D
1.40
2.54
3.56
1.60
2.69
3.68
---
0.055
0.100
0.140
0.010
0°
0.063
0.106
0.145
---
E
H
E
L
0.25
0°
---
---
10
10
q
°
°
2
STYLE 1:
q
PIN 1. CATHODE
2. ANODE
L
b
C
SOLDERING FOOTPRINT*
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMSZ2V4ET1/D
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