MMSZ4691ET1G [ONSEMI]
Zener Voltage Regulators 500 mW SOD−123 Surface Mount; 齐纳稳压器500 mW的SOD- 123表面贴装
| 型号： | MMSZ4691ET1G |
| 厂家： | 
ONSEMI |
| 描述： | Zener Voltage Regulators 500 mW SOD−123 Surface Mount |
| 文件： | 总6页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMSZ4678ET1 Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
http://onsemi.com
Features
• Pb−Free Packages are Available
• 500 mW Rating on FR−4 or FR−5 Board
1
2
Cathode
Anode
• Wide Zener Reverse Voltage Range − 1.8 V to 43 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Peak Power − 225 W (8 x 20 ms)
SOD−123
CASE 425
STYLE 1
2
1
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MARKING DIAGRAM
xxx M
xxx = Specific Device Code
M
= Date Code
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20 ms (Note 1)
P
pk
225
W
ORDERING INFORMATION
@ T ≤ 25°C
L
†
Device*
Package
Shipping
Total Power Dissipation on FR−5 Board,
P
D
(Note 2) @ T = 75°C
Derated above 75°C
500
6.7
mW
mW/°C
MMSZ4xxxET1
SOD−123
3000/Tape & Reel
3000/Tape & Reel
L
MMSZ4xxxET1G SOD−123
(Pb−Free)
Thermal Resistance, (Note 3)
Junction−to−Ambient
R
340
°C/W
°C/W
°C
q
JA
MMSZ4xxxET3
SOD−123 10,000/Tape & Reel
Thermal Resistance, (Note 3)
Junction−to−Lead
R
q
JL
150
MMSZ4xxxET3G SOD−123 10,000/Tape & Reel
(Pb−Free)
Junction and Storage Temperature Range
T , T
J
−55 to
+150
stg
*The “T1” suffix refers to an 8 mm, 7 inch reel.
The “T3” suffix refers to an 8 mm, 13 inch reel.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. Nonrepetitive current pulse per Figure 11.
2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
3. Thermal Resistance measurement obtained via infrared Scan Method.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
February, 2005 − Rev. 3
MMSZ4678ET1/D
MMSZ4678ET1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless
A
I
otherwise noted, V = 0.95 V Max. @ I = 10 mA)
F
F
I
F
Symbol
Parameter
V
Z
Reverse Zener Voltage @ I
ZT
I
ZT
Reverse Current
V
Z
V
R
I
Reverse Leakage Current @ V
Reverse Voltage
R
R
V
I
V
F
R
ZT
V
I
R
I
F
Forward Current
V
F
Forward Voltage @ I
F
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA)
A
F
F
Zener Voltage (Note 1)
Leakage Current
V (V)
Z
@ I
I @ V
R R
ZT
Device
Marking
Min
3.13
Nom
3.3
4.7
5.1
5.6
6.2
6.8
7.5
10
Max
3.47
mA
mA
7.5
10
V
1.5
3
Device
MMSZ4684ET1
MMSZ4688ET1, G
MMSZ4689ET1
MMSZ4690ET1
MMSZ4691ET1
MMSZ4692ET1
MMSZ4693ET1
MMSZ4697ET1
MMSZ4699ET1
MMSZ4701ET1
MMSZ4702ET1
MMSZ4703ET1
MMSZ4705ET1
MMSZ4709ET1
MMSZ4711ET1
MMSZ4717ET1
CG3
CG7
CG8
CG9
CH1
CH2
CH3
CH7
CH9
CJ2
CJ3
CJ4
CJ6
CK1
CK3
CK9
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
4.47
4.94
4.85
5.36
10
3
5.32
5.88
10
4
5.89
6.51
10
5
6.46
7.14
10
5.1
5.7
7.6
9.1
10.6
11.4
12.1
13.6
18.2
20.4
32.6
7.13
7.88
10
9.50
10.50
12.60
14.7
1
11.40
13.3
12
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
14
14.25
15.20
17.10
22.80
25.65
40.85
15
15.75
16.80
18.90
25.20
28.35
45.15
16
18
24
27
43
1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T = 30°C ±1°C.
L
http://onsemi.com
2
MMSZ4678ET1 Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
100
TYPICAL T VALUES
TYPICAL T VALUES
C
C
V @ I
Z
ZT
V @ I
Z
ZT
10
2
1
0
−1
−2
−3
1
2
3
4
5
6
7
8
9
10
11
12
10
100
V
, NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 1. Temperature Coefficients
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
(Temperature Range −55°C to +150°C)
1.2
1.0
0.8
0.6
1000
100
10
RECTANGULAR
WAVEFORM, T = 25°C
A
P
versus T
L
D
P
D
versus T
A
0.4
0.2
0
1
0
25
50
75
100
125
150
0.1
1
10
100
1000
T, TEMPERATURE (°C)
PW, PULSE WIDTH (ms)
Figure 3. Steady State Power Derating
Figure 4. Maximum Nonrepetitive Surge Power
1000
100
10
1000
100
10
T = 25°C
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
J
I
= 0.1 I
Z(DC)
Z(AC)
I = 1 mA
Z
f = 1 kHz
5 mA
20 mA
75°C 25°C
0.6 0.7
0°C
150°C
1
1
1
10
V , NOMINAL ZENER VOLTAGE
100
0.4
0.5
0.8
0.9
1.0
1.1 1.2
V , FORWARD VOLTAGE (V)
F
Z
Figure 5. Effect of Zener Voltage on
Zener Impedance
Figure 6. Typical Forward Voltage
http://onsemi.com
3
MMSZ4678ET1 Series
TYPICAL CHARACTERISTICS
1000
100
1000
T = 25°C
A
0 V BIAS
1 V BIAS
100
10
1
+150°C
BIAS AT
50% OF V NOM
0.1
0.01
Z
10
1
+25°C
−55°C
0.001
0.0001
0.00001
1
10
100
0
10
20
30
40
50
60
70
80
90
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 7. Typical Capacitance
Figure 8. Typical Leakage Current
100
10
100
10
T = 25°C
A
T = 25°C
A
1
1
0.1
0.01
0.1
0.01
10
30
50
70
90
0
2
4
6
8
10
12
V , ZENER VOLTAGE (V)
Z
V , ZENER VOLTAGE (V)
Z
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
100
PEAK VALUE I
@ 8 ms
RSM
t
r
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
P
HALF VALUE I
/2 @ 20 ms
RSM
t
P
10
0
0
20
40
60
80
t, TIME (ms)
Figure 11. 8 × 20 ms Pulse Waveform
http://onsemi.com
4
MMSZ4678ET1 Series
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE C
A
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
H
2. CONTROLLING DIMENSION: INCH.
1
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.40
2.55
0.95
0.50
0.25
0.00
−−−
MAX
1.80
2.85
1.35
0.70
−−−
A
B
C
D
E
H
J
0.055
0.100
0.037
0.020
0.01
0.071
0.112
0.053
0.028
−−−
K
B
0.000
−−−
0.140
0.004
0.006
0.152
0.10
0.15
3.85
K
3.55
E
STYLE 1:
PIN 1. CATHODE
2. ANODE
2
J
D
SOLDERING FOOTPRINT*
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MMSZ4678ET1 Series
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MMSZ4678ET1/D
相关型号：
MMSZ4691T1
Zener Diode, 6.2V V(Z), 5%, 0.5W, Silicon, Unidirectional, PLASTIC, CASE 425, 2 PIN
MOTOROLA
MMSZ4691T3
6.2V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, CASE 425, 2 PIN
MOTOROLA
©2020 ICPDF网 联系我们和版权申明