MMSZ5259ET1G [ONSEMI]
Zener Voltage Regulators 500 mW SODâ123 Surface Mount; 齐纳稳压器500毫瓦苏打???? 123表面贴装
| 型号： | MMSZ5259ET1G |
| 厂家： | 
ONSEMI |
| 描述： | Zener Voltage Regulators 500 mW SODâ123 Surface Mount |
| 文件： | 总6页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMSZ52xxET1G Series,
SZMMSZ52xxET1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
http://onsemi.com
Features
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 2.4 V to 110 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
General Purpose, Medium Current
SOD−123
CASE 425
STYLE 1
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power − 225 W (8 x 20 ms)
1
2
Cathode
Anode
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
MARKING DIAGRAM
Pb−Free Packages are Available*
Mechanical Characteristics:
xxx M G
1
G
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
xxx = Device Code (Refer to page 2)
M
G
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
MAXIMUM RATINGS
ORDERING INFORMATION
Rating
Symbol
Max
Units
P
pk
225
W
†
Peak Power Dissipation @ 20 ms (Note 1)
Device
Package
Shipping
@ T 25C
L
MMSZ52xxET1G
SOD−123
(Pb−Free)
3,000 /
Total Power Dissipation on FR−5 Board,
P
D
Tape & Reel
(Note 3) @ T = 75C
500
6.7
mW
mW/C
L
Derated above 75C
SZMMSZ52xxET1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
Thermal Resistance, (Note 2)
Junction−to−Ambient
R
C/W
C/W
C
q
JA
340
MMSZ52xxET3G
SOD−123
(Pb−Free)
10,000 /
Tape & Reel
Thermal Resistance, (Note 2)
Junction−to−Lead
R
q
JL
150
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Junction and Storage Temperature Range
T , T
−55 to
+150
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11.
2. Thermal Resistance measurement obtained via infrared Scan Method.
3. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
February, 2012 − Rev. 8
MMSZ5221ET1/D
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
ELECTRICAL CHARACTERISTICS (T = 25C unless
A
I
otherwise noted, V = 0.95 V Max. @ I = 10 mA)
F
F
I
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
V
Z
V
R
Z
I
Maximum Zener Impedance @ I
Reverse Current
ZT
ZT
V
I
V
F
R
ZT
I
ZK
Z
ZK
Maximum Zener Impedance @ I
ZK
I
Reverse Leakage Current @ V
Reverse Voltage
R
R
V
R
I
F
Forward Current
Zener Voltage Regulator
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA)
A
F
F
Zener Voltage (Notes 4 and 5)
Zener Impedance (Note 6)
Leakage Current
V (V)
Z
@ I
Z
ZT
@ I
Z
ZK
@ I
I @ V
R R
ZT
ZT
ZK
Device
Marking
Min
Nom
Max
mA
W
W
mA
mA
V
Device*
MMSZ5221ET1G
MMSZ5223ET1G
MMSZ5226ET1G
MMSZ5228ET1G
MMSZ5229ET1G
CA1
CA3
CA6
CA8
CA9
2.28
2.57
3.14
3.71
4.09
2.4
2.7
3.3
3.9
4.3
2.52
2.84
3.47
4.10
4.52
20
20
20
20
20
30
30
28
23
22
1200
1300
1600
1900
2000
0.25
0.25
0.25
0.25
0.25
100
75
25
10
5
1
1
1
1
1
MMSZ5231ET1G
MMSZ5232ET1G
MMSZ5234ET1G
MMSZ5235ET1G
MMSZ5236ET1G
CB2
CB3
CB5
CB6
CB7
4.85
5.32
5.89
6.46
7.13
5.1
5.6
6.2
6.8
7.5
5.36
5.88
6.51
7.14
7.88
20
20
20
20
20
17
11
7
1600
1600
1000
750
0.25
0.25
0.25
0.25
0.25
5
5
5
3
3
2
3
4
5
6
5
6
500
MMSZ5237ET1G
MMSZ5240ET1G
MMSZ5242ET1G
MMSZ5243ET1G
MMSZ5244ET1G
CB8
CC2
CC4
CC5
CC6
7.79
9.50
8.2
10
12
13
14
8.61
10.50
12.60
13.65
14.70
20
20
8
500
600
600
600
600
0.25
0.25
0.25
0.25
0.25
3
3
6.5
8
17
30
13
15
11.40
12.35
13.30
20
1
9.1
9.9
10
9.5
9.0
0.5
0.1
MMSZ5245ET1G
MMSZ5246ET1G
MMSZ5248ET1G
MMSZ5250ET1G
MMSZ5252ET1G
CC7
CC8
CD1
CD3
CD5
14.25
15.20
17.10
19.00
22.80
15
16
18
20
24
15.75
16.80
18.90
21.00
25.20
8.5
7.8
7.0
6.2
5.2
16
17
21
25
33
600
600
600
600
600
0.25
0.25
0.25
0.25
0.25
0.1
0.1
0.1
0.1
0.1
11
12
14
15
18
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T = 30C 1C.
L
6. Z and Z are measured by dividing the AC voltage drop across the device by the ac current applied.
ZT
ZK
The specified limits are for I
= 0.1 I
with the AC frequency = 1 kHz.
Z(AC)
Z(dc)
*Include SZ-prefix devices where applicable
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2
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA)
A
F
F
Zener Voltage (Notes 4 and 5)
Zener Impedance (Note 6)
Leakage Current
@ V
V (V)
@ I
Z
@ I
Z
ZK
@ I
I
R
Z
ZT
ZT
ZT
ZK
R
Device
Marking
Min
Nom
Max
mA
W
W
mA
mA
V
Device*
MMSZ5253ET1G
MMSZ5254ET1G
MMSZ5255ET1G
MMSZ5256ET1G
MMSZ5257ET1G
CD6
CD7
CD8
CD9
CE1
23.75
25.65
26.60
28.50
31.35
25
27
28
30
33
26.25
28.35
29.40
31.50
34.65
5.0
4.6
4.5
4.2
3.8
35
41
44
49
58
600
600
600
600
700
0.25
0.25
0.25
0.25
0.25
0.1
0.1
0.1
0.1
0.1
19
21
21
23
25
MMSZ5258ET1G
MMSZ5259ET1G
MMSZ5262ET1G
MMSZ5263ET1G
CE2
CE3
CE6
CE7
34.20
37.05
48.45
53.20
36
39
51
56
37.80
40.95
53.55
58.80
3.4
3.2
2.5
2.2
70
80
700
800
0.25
0.25
0.25
0.25
0.1
0.1
0.1
0.1
27
30
39
43
125
150
1100
1300
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T = 30C 1C.
L
6. Z and Z are measured by dividing the AC voltage drop across the device by the ac current applied.
ZT
ZK
The specified limits are for I
= 0.1 I
with the AC frequency = 1 kHz.
Z(AC)
Z(dc)
*Include SZ-prefix devices where applicable
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3
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
TYPICAL CHARACTERISTICS
8
7
100
TYPICAL T VALUES
FOR MMSZ5221BT1G SERIES
C
TYPICAL T VALUES
FOR MMSZ5221BT1G SERIES
C
6
5
V @ I
4
Z
ZT
V @ I
Z
ZT
3
10
2
1
0
−1
−2
−3
1
2
3
4
5
6
7
8
9
10
11 12
10
100
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 1. Temperature Coefficients
Figure 2. Temperature Coefficients
(Temperature Range −55C to +150C)
(Temperature Range −55C to +150C)
1.2
1.0
0.8
0.6
1000
100
10
RECTANGULAR
WAVEFORM, T = 25C
A
P
versus T
L
D
P
D
versus T
A
0.4
0.2
0
1
0
25
50
75
100
125
150
0.1
1
10
100
1000
T, TEMPERATURE (C)
PW, PULSE WIDTH (ms)
Figure 3. Steady State Power Derating
Figure 4. Maximum Nonrepetitive Surge Power
1000
1000
100
T = 25C
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
J
I
= 0.1 I
Z(AC)
Z(DC)
I = 1 mA
Z
f = 1 kHz
100
10
1
5 mA
20 mA
10
1
75C 25C
0.6 0.7
0C
150C
0.4 0.5
1
10
V , NOMINAL ZENER VOLTAGE
100
0.8
0.9
1.0
1.1 1.2
V , FORWARD VOLTAGE (V)
F
Z
Figure 5. Effect of Zener Voltage on
Zener Impedance
Figure 6. Typical Forward Voltage
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4
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
TYPICAL CHARACTERISTICS
1000
100
1000
T = 25C
A
100
10
0 V BIAS
1 V BIAS
1
+150C
BIAS AT
50% OF V NOM
0.1
Z
0.01
0.001
10
1
+25C
−55C
0.0001
0.00001
1
10
100
0
10
20
30
40
50
60
70
80
90
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 7. Typical Capacitance
Figure 8. Typical Leakage Current
100
10
1
100
10
1
T = 25C
A
T = 25C
A
0.1
0.1
0.01
0.01
10
30
50
70
90
0
2
4
6
8
10
12
V , ZENER VOLTAGE (V)
Z
V , ZENER VOLTAGE (V)
Z
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
100
PEAK VALUE I
@ 8 ms
RSM
t
r
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
P
HALF VALUE I
/2 @ 20 ms
RSM
t
P
10
0
0
20
40
60
80
t, TIME (ms)
Figure 11. 8 20 ms Pulse Waveform
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5
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
1
MILLIMETERS
INCHES
DIM MIN
NOM
1.17
0.05
0.61
---
MAX
1.35
0.10
0.71
0.15
1.80
2.84
3.86
---
MIN
0.037
0.000
0.020
---
NOM
0.046
0.002
0.024
---
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
---
A
A1
b
0.94
0.00
0.51
---
H
E
E
c
D
1.40
2.54
3.56
1.60
2.69
3.68
---
0.055
0.100
0.140
0.010
0
0.063
0.106
0.145
---
E
H
E
L
0.25
0
---
---
10
10
q
2
STYLE 1:
PIN 1. CATHODE
2. ANODE
q
L
b
C
SOLDERING FOOTPRINT*
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMSZ5221ET1/D
相关型号：
MMSZ5259ET3
39V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, CASE 425-04, 2 PIN
ONSEMI
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