MMSZ5262ET1 [ONSEMI]
51V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, CASE 425-04, 2 PIN;型号: | MMSZ5262ET1 |
厂家: | ONSEMI |
描述: | 51V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, CASE 425-04, 2 PIN |
文件: | 总6页 (文件大小:165K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMSZ52xxET1 Series,
SZMMSZ52xxET1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
http://onsemi.com
1
2
Features
Cathode
Anode
• 500 mW Rating on FR−4 or FR−5 Board
• Wide Zener Reverse Voltage Range − 2.4 V to 110 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• General Purpose, Medium Current
SOD−123
CASE 425
STYLE 1
2
1
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Peak Power − 225 W (8 x 20 ms)
• AEC−Q101 Qualified and PPAP Capable
MARKING DIAGRAM
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
xxx M G
1
G
• Pb−Free Packages are Available
Mechanical Characteristics:
xxx = Device Code (Refer to page 2)
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
M
G
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
MMSZ52xxET1
SOD−123
3000 / Tape &
Reel
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
MMSZ52xxET1G
SOD−123
(Pb−Free)
3000 / Tape &
Reel
Peak Power Dissipation @ 20 ms (Note 1)
P
pk
225
W
@ T ≤ 25°C
L
Total Power Dissipation on FR−5 Board,
P
D
SZMMSZ52xxET1G SOD−123
(Pb−Free)
3000 / Tape &
Reel
500
6.7
mW
mW/°C
(Note 3) @ T = 75°C
L
Derated above 75°C
MMSZ52xxET3
SOD−123
10000 / Tape &
Reel
Thermal Resistance, (Note 2)
Junction−to−Ambient
R
340
150
°C/W
°C/W
°C
q
JA
Thermal Resistance, (Note 2)
Junction−to−Lead
R
q
JL
MMSZ52xxET3G
SOD−123
(Pb−Free)
10000 / Tape &
Reel
Junction and Storage Temperature Range
T , T
J
−55 to
+150
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11.
2. Thermal Resistance measurement obtained via infrared Scan Method.
3. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
November, 2011 − Rev. 7
MMSZ5221ET1/D
MMSZ52xxET1 Series, SZMMSZ52xxET1G Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless
A
I
otherwise noted, V = 0.95 V Max. @ I = 10 mA)
F
F
I
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
V
Z
V
R
Z
I
Maximum Zener Impedance @ I
Reverse Current
ZT
ZT
V
I
V
F
R
ZT
I
ZK
Z
ZK
Maximum Zener Impedance @ I
ZK
I
Reverse Leakage Current @ V
Reverse Voltage
R
R
V
R
I
F
Forward Current
Zener Voltage Regulator
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA)
A
F
F
Zener Voltage (Notes 4 and 5)
Zener Impedance (Note 6)
Leakage Current
V (V)
Z
@ I
Z
ZT
@ I
Z
ZK
@ I
I @ V
R R
ZT
ZT
ZK
Device
Marking
Min
Nom
Max
mA
W
W
mA
mA
V
Device*
MMSZ5221ET1
MMSZ5223ET1
MMSZ5226ET1
MMSZ5228ET1
MMSZ5229ET1
CA1
CA3
CA6
CA8
CA9
2.28
2.57
3.14
3.71
4.09
2.4
2.7
3.3
3.9
4.3
2.52
2.84
3.47
4.10
4.52
20
20
20
20
20
30
30
28
23
22
1200
1300
1600
1900
2000
0.25
0.25
0.25
0.25
0.25
100
75
25
10
5
1
1
1
1
1
MMSZ5231ET1
MMSZ5232ET1
MMSZ5234ET1
SZ/MMSZ5235ET1
MMSZ5236ET1
CB2
CB3
CB5
CB6
CB7
4.85
5.32
5.89
6.46
7.13
5.1
5.6
6.2
6.8
7.5
5.36
5.88
6.51
7.14
7.88
20
20
20
20
20
17
11
7
1600
1600
1000
750
0.25
0.25
0.25
0.25
0.25
5
5
5
3
3
2
3
4
5
6
5
6
500
SZ/MMSZ5237ET1
MMSZ5240ET1
CB8
CC2
CC4
CC5
CC6
7.79
9.50
8.2
10
12
13
14
8.61
10.50
12.60
13.65
14.70
20
20
8
500
600
600
600
600
0.25
0.25
0.25
0.25
0.25
3
3
6.5
8
17
30
13
15
SZ/MMSZ5242ET1
MMSZ5243ET1
11.40
12.35
13.30
20
1
9.1
9.9
10
9.5
9.0
0.5
0.1
SZ/MMSZ5244ET1
SZ/MMSZ5245ET1
SZ/MMSZ5246ET1
MMSZ5248ET1
CC7
CC8
CD1
CD3
CD5
14.25
15.20
17.10
19.00
22.80
15
16
18
20
24
15.75
16.80
18.90
21.00
25.20
8.5
7.8
7.0
6.2
5.2
16
17
21
25
33
600
600
600
600
600
0.25
0.25
0.25
0.25
0.25
0.1
0.1
0.1
0.1
0.1
11
12
14
15
18
MMSZ5250ET1
SZ/MMSZ5252ET1
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T = 30°C $1°C.
L
6. Z and Z are measured by dividing the AC voltage drop across the device by the ac current applied.
ZT
ZK
The specified limits are for I
= 0.1 I
with the AC frequency = 1 kHz.
Z(AC)
Z(dc)
*The “G’’ suffix indicates Pb−Free package available. See Ordering Information Table on page 1.
http://onsemi.com
2
MMSZ52xxET1 Series, SZMMSZ52xxET1G Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA)
A
F
F
Zener Voltage (Notes 4 and 5)
Zener Impedance (Note 6)
Leakage Current
@ V
V (V)
@ I
Z
@ I
Z
ZK
@ I
I
R
Z
ZT
ZT
ZT
ZK
R
Device
Marking
Min
Nom
Max
mA
W
W
mA
mA
V
Device*
MMSZ5253ET1
CD6
CD7
CD8
CD9
CE1
23.75
25.65
26.60
28.50
31.35
25
27
28
30
33
26.25
28.35
29.40
31.50
34.65
5.0
4.6
4.5
4.2
3.8
35
41
44
49
58
600
600
600
600
700
0.25
0.25
0.25
0.25
0.25
0.1
0.1
0.1
0.1
0.1
19
21
21
23
25
SZ/MMSZ5254ET1
SZ/MMSZ5255ET1
SZ/MMSZ5256ET1
SZ/MMSZ5257ET1
MMSZ5258ET1
MMSZ5259ET1
MMSZ5262ET1
MMSZ5263ET1
CE2
CE3
CE6
CE7
34.20
37.05
48.45
53.20
36
39
51
56
37.80
40.95
53.55
58.80
3.4
3.2
2.5
2.2
70
80
700
800
0.25
0.25
0.25
0.25
0.1
0.1
0.1
0.1
27
30
39
43
125
150
1100
1300
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T = 30°C $1°C.
L
6. Z and Z are measured by dividing the AC voltage drop across the device by the ac current applied.
ZT
ZK
The specified limits are for I
= 0.1 I
with the AC frequency = 1 kHz.
Z(AC)
Z(dc)
*The “G’’ suffix indicates Pb−Free package available. See Ordering Information Table on page 1.
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3
MMSZ52xxET1 Series, SZMMSZ52xxET1G Series
TYPICAL CHARACTERISTICS
8
7
100
TYPICAL T VALUES
FOR MMSZ5221BT1 SERIES
C
TYPICAL T VALUES
FOR MMSZ5221BT1 SERIES
C
6
5
V @ I
4
Z
ZT
V @ I
Z
ZT
3
10
2
1
0
−1
−2
−3
1
2
3
4
5
6
7
8
9
10
11 12
10
100
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 1. Temperature Coefficients
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
(Temperature Range −55°C to +150°C)
1.2
1.0
0.8
0.6
1000
100
10
RECTANGULAR
WAVEFORM, T = 25°C
A
P
versus T
L
D
P
D
versus T
A
0.4
0.2
0
1
0
25
50
75
100
125
150
0.1
1
10
100
1000
T, TEMPERATURE (°C)
PW, PULSE WIDTH (ms)
Figure 3. Steady State Power Derating
Figure 4. Maximum Nonrepetitive Surge Power
1000
1000
100
T = 25°C
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
J
I
= 0.1 I
Z(AC)
Z(DC)
I = 1 mA
Z
f = 1 kHz
100
10
1
5 mA
20 mA
10
1
75°C 25°C
0.6 0.7
0°C
150°C
0.4 0.5
1
10
V , NOMINAL ZENER VOLTAGE
100
0.8
0.9
1.0
1.1 1.2
V , FORWARD VOLTAGE (V)
F
Z
Figure 5. Effect of Zener Voltage on
Zener Impedance
Figure 6. Typical Forward Voltage
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4
MMSZ52xxET1 Series, SZMMSZ52xxET1G Series
TYPICAL CHARACTERISTICS
1000
100
1000
T = 25°C
A
100
10
0 V BIAS
1 V BIAS
1
+150°C
BIAS AT
50% OF V NOM
0.1
Z
0.01
0.001
10
1
+25°C
−55°C
0.0001
0.00001
1
10
100
0
10
20
30
40
50
60
70
80
90
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 7. Typical Capacitance
Figure 8. Typical Leakage Current
100
10
1
100
10
1
T = 25°C
A
T = 25°C
A
0.1
0.1
0.01
0.01
10
30
50
70
90
0
2
4
6
8
10
12
V , ZENER VOLTAGE (V)
Z
V , ZENER VOLTAGE (V)
Z
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
100
PEAK VALUE I
@ 8 ms
RSM
t
r
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
P
HALF VALUE I
/2 @ 20 ms
RSM
t
P
10
0
0
20
40
60
80
t, TIME (ms)
Figure 11. 8 × 20 ms Pulse Waveform
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5
MMSZ52xxET1 Series, SZMMSZ52xxET1G Series
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
1
MILLIMETERS
INCHES
DIM MIN
NOM
1.17
0.05
0.61
---
MAX
1.35
0.10
0.71
0.15
1.80
2.84
3.86
---
MIN
0.037
0.000
0.020
---
NOM
0.046
0.002
0.024
---
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
---
A
A1
b
0.94
0.00
0.51
---
H
E
E
c
D
1.40
2.54
3.56
1.60
2.69
3.68
---
0.055
0.100
0.140
0.010
0°
0.063
0.106
0.145
---
E
H
E
L
0.25
0°
---
---
10
10
q
°
°
2
STYLE 1:
PIN 1. CATHODE
2. ANODE
q
L
b
C
SOLDERING FOOTPRINT*
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMSZ5221ET1/D
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