MMSZ5263ETG [ONSEMI]

Zener Voltage Regulators; 齐纳稳压器
MMSZ5263ETG
型号: MMSZ5263ETG
厂家: ONSEMI    ONSEMI
描述:

Zener Voltage Regulators
齐纳稳压器

稳压器
文件: 总6页 (文件大小:79K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMSZ5221ET1 Series  
Preferred Device  
Zener Voltage Regulators  
500 mW SOD−123 Surface Mount  
Three complete series of Zener diodes are offered in the convenient,  
surface mount plastic SOD−123 package. These devices provide a  
convenient alternative to the leadless 34−package style.  
http://onsemi.com  
Features  
1
2
Pb−Free Packages are Available  
Cathode  
Anode  
500 mW Rating on FR−4 or FR−5 Board  
Wide Zener Reverse Voltage Range − 2.4 V to 110 V  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
General Purpose, Medium Current  
SOD−123  
CASE 425  
STYLE 1  
2
1
ESD Rating of Class 3 (>16 kV) per Human Body Model  
Peak Power − 225 W (8 x 20 ms)  
MARKING DIAGRAM  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
xxx M  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
xxx = Specific Device Code  
M
= Date Code  
MAXIMUM RATINGS  
ORDERING INFORMATION  
Rating  
Symbol  
Max  
Unit  
Device**  
Package  
Shipping  
Peak Power Dissipation @ 20 ms (Note 1)  
P
pk  
225  
W
MMSZ52xxET1  
SOD−123  
3000/Tape & Reel  
3000/Tape & Reel  
@ T 25°C  
L
Total Power Dissipation on FR−5 Board,  
(Note 2) @ T = 75°C  
Derated above 75°C  
P
D
MMSZ52xxET1G SOD−123  
(Pb−Free)  
500  
6.7  
mW  
mW/°C  
L
MMSZ52xxET3  
SOD−123 10,000/Tape & Reel  
Thermal Resistance, (Note 3)  
Junction−to−Ambient  
R
340  
150  
°C/W  
°C/W  
°C  
q
JA  
MMSZ52xxET3G SOD−123 10,000/Tape & Reel  
(Pb−Free)  
Thermal Resistance, (Note 3)  
Junction−to−Lead  
R
q
JL  
**The “T1” suffix refers to an 8 mm, 7 inch reel.  
The “T3” suffix refers to an 8 mm, 13 inch reel.  
Junction and Storage Temperature Range T , T  
−55 to  
+150  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
1. Nonrepetitive current pulse per Figure 11.  
2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.  
3. Thermal Resistance measurement obtained via infrared Scan Method.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 2 of  
this data sheet.  
Devices listed in bold, italic are ON Semiconductor  
Preferred devices. Preferred devices are recommended  
choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
February, 2005 − Rev. 4  
MMSZ5221ET1/D  
 
MMSZ5221ET1 Series  
ELECTRICAL CHARACTERISTICS (T = 25°C unless  
A
I
otherwise noted, V = 0.95 V Max. @ I = 10 mA)  
F
F
I
F
Symbol  
Parameter  
V
Z
Reverse Zener Voltage @ I  
ZT  
I
ZT  
Reverse Current  
V
Z
V
R
Z
I
Maximum Zener Impedance @ I  
Reverse Current  
ZT  
ZT  
V
I
V
F
R
ZT  
I
ZK  
Z
ZK  
Maximum Zener Impedance @ I  
ZK  
I
Reverse Leakage Current @ V  
Reverse Voltage  
R
R
V
R
I
F
Forward Current  
Zener Voltage Regulator  
V
F
Forward Voltage @ I  
F
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA)  
A
F
F
Zener Voltage (Notes 4 and 5)  
Zener Impedance (Note 6)  
Leakage Current  
V (V)  
@ I  
Z
ZT  
@ I  
W
Z
@ I  
I @ V  
R R  
Z
ZT  
ZT  
ZK  
ZK  
Device  
Marking  
Min  
2.28  
Nom  
2.4  
2.7  
3.3  
3.9  
4.3  
5.1  
5.6  
6.2  
6.8  
7.5  
8.2  
10  
Max  
2.52  
mA  
W
mA  
mA  
V
1
1
1
1
1
2
3
4
5
6
Device  
MMSZ5221ET1  
MMSZ5223ET1  
MMSZ5226ET1  
MMSZ5228ET1  
MMSZ5229ET1  
MMSZ5231ET1  
MMSZ5232ET1, G  
MMSZ5234ET1  
MMSZ5235ET1  
MMSZ5236ET1, G  
MMSZ5237ET1  
MMSZ5240ET1, G  
MMSZ5242ET1, G  
MMSZ5243ET1  
MMSZ5244ET1  
MMSZ5245ET1  
MMSZ5246ET1  
MMSZ5248ET1  
MMSZ5250ET1  
MMSZ5252ET1  
MMSZ5255ET1  
MMSZ5256ET1  
MMSZ5257ET1  
MMSZ5263ET1  
CA1  
CA3  
CA6  
CA8  
CA9  
CB2  
CB3  
CB5  
CB6  
CB7  
CB8  
CC2  
CC4  
CC5  
CC6  
CC7  
CC8  
CD1  
CD3  
CD5  
CD8  
CD9  
CE1  
CE7  
20  
20  
30  
30  
28  
23  
22  
17  
11  
7
1200  
1300  
1600  
1900  
2000  
1600  
1600  
1000  
750  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
100  
75  
25  
10  
5
2.57  
2.84  
3.14  
3.47  
20  
3.71  
4.10  
20  
4.09  
4.52  
20  
4.85  
5.36  
20  
5
5.32  
5.88  
20  
5
5.89  
6.51  
20  
5
6.46  
7.14  
20  
5
3
7.13  
7.88  
20  
6
500  
3
7.79  
8.61  
20  
8
500  
3
6.5  
8
9.50  
10.50  
12.60  
13.65  
14.70  
15.75  
16.80  
18.90  
21.00  
25.20  
29.40  
31.50  
34.65  
58.80  
20  
17  
30  
13  
15  
16  
17  
21  
25  
33  
44  
49  
58  
600  
3
11.40  
12.35  
13.30  
14.25  
15.20  
17.10  
19.00  
22.80  
26.60  
28.50  
31.35  
53.20  
12  
20  
600  
1
9.1  
9.9  
10  
11  
12  
14  
15  
18  
21  
23  
25  
43  
13  
9.5  
9.0  
8.5  
7.8  
7.0  
6.2  
5.2  
4.5  
4.2  
3.8  
2.2  
600  
0.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
14  
600  
15  
600  
16  
600  
18  
600  
20  
600  
24  
600  
28  
600  
30  
600  
33  
700  
56  
150  
1300  
4. The type numbers shown have a standard tolerance of ±5% on the nominal Zener voltage.  
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T = 30°C $1°C.  
L
6. Z and Z are measured by dividing the AC voltage drop across the device by the ac current applied.  
ZT  
ZK  
The specified limits are for I  
= 0.1 I  
with the AC frequency = 1 kHz.  
Z(AC)  
Z(dc)  
http://onsemi.com  
2
 
MMSZ5221ET1 Series  
TYPICAL CHARACTERISTICS  
8
7
100  
TYPICAL T VALUES  
FOR MMSZ5221BT1 SERIES  
C
TYPICAL T VALUES  
FOR MMSZ5221BT1 SERIES  
C
6
5
V @ I  
4
Z
ZT  
V @ I  
Z
ZT  
3
10  
2
1
0
−1  
−2  
−3  
1
2
3
4
5
6
7
8
9
10  
11 12  
10  
100  
V , NOMINAL ZENER VOLTAGE (V)  
Z
V , NOMINAL ZENER VOLTAGE (V)  
Z
Figure 1. Temperature Coefficients  
Figure 2. Temperature Coefficients  
(Temperature Range 55°C to +150°C)  
(Temperature Range 55°C to +150°C)  
1.2  
1.0  
0.8  
0.6  
1000  
100  
10  
RECTANGULAR  
WAVEFORM, T = 25°C  
A
P
versus T  
L
D
P
D
versus T  
A
0.4  
0.2  
0
1
0
25  
50  
75  
100  
125  
150  
0.1  
1
10  
100  
1000  
T, TEMPERATURE (°C)  
PW, PULSE WIDTH (ms)  
Figure 3. Steady State Power Derating  
Figure 4. Maximum Nonrepetitive Surge Power  
1000  
1000  
100  
T = 25°C  
75 V (MMSZ5267BT1)  
91 V (MMSZ5270BT1)  
J
I
= 0.1 I  
Z(DC)  
Z(AC)  
I = 1 mA  
Z
f = 1 kHz  
100  
10  
1
5 mA  
20 mA  
10  
1
75°C 25°C  
0.6 0.7  
0°C  
150°C  
0.4 0.5  
1
10  
V , NOMINAL ZENER VOLTAGE  
100  
0.8  
0.9  
1.0  
1.1 1.2  
V , FORWARD VOLTAGE (V)  
F
Z
Figure 5. Effect of Zener Voltage on  
Zener Impedance  
Figure 6. Typical Forward Voltage  
http://onsemi.com  
3
MMSZ5221ET1 Series  
TYPICAL CHARACTERISTICS  
1000  
100  
1000  
T = 25°C  
A
100  
10  
0 V BIAS  
1 V BIAS  
1
+150°C  
BIAS AT  
50% OF V NOM  
0.1  
Z
0.01  
0.001  
10  
1
+25°C  
55°C  
0.0001  
0.00001  
1
10  
100  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
V , NOMINAL ZENER VOLTAGE (V)  
Z
V , NOMINAL ZENER VOLTAGE (V)  
Z
Figure 7. Typical Capacitance  
Figure 8. Typical Leakage Current  
100  
10  
1
100  
10  
1
T = 25°C  
A
T = 25°C  
A
0.1  
0.1  
0.01  
0.01  
10  
30  
50  
70  
90  
0
2
4
6
8
10  
12  
V , ZENER VOLTAGE (V)  
Z
V , ZENER VOLTAGE (V)  
Z
Figure 10. Zener Voltage versus Zener Current  
(12 V to 91 V)  
Figure 9. Zener Voltage versus Zener Current  
(VZ Up to 12 V)  
100  
PEAK VALUE I  
@ 8 ms  
RSM  
t
r
90  
80  
70  
60  
50  
40  
30  
20  
PULSE WIDTH (t ) IS DEFINED  
AS THAT POINT WHERE THE  
PEAK CURRENT DECAY = 8 ms  
P
HALF VALUE I  
/2 @ 20 ms  
RSM  
t
P
10  
0
0
20  
40  
60  
80  
t, TIME (ms)  
Figure 11. 8 × 20 ms Pulse Waveform  
http://onsemi.com  
4
MMSZ5221ET1 Series  
PACKAGE DIMENSIONS  
SOD−123  
CASE 425−04  
ISSUE C  
A
C
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
H
2. CONTROLLING DIMENSION: INCH.  
1
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
1.40  
2.55  
0.95  
0.50  
0.25  
0.00  
−−−  
MAX  
1.80  
2.85  
1.35  
0.70  
−−−  
A
B
C
D
E
H
J
0.055  
0.100  
0.037  
0.020  
0.01  
0.071  
0.112  
0.053  
0.028  
−−−  
K
B
0.000  
−−−  
0.140  
0.004  
0.006  
0.152  
0.10  
0.15  
3.85  
K
3.55  
E
STYLE 1:  
PIN 1. CATHODE  
2. ANODE  
2
J
D
SOLDERING FOOTPRINT*  
0.91  
0.036  
1.22  
0.048  
2.36  
0.093  
4.19  
0.165  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
5
MMSZ5221ET1 Series  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
MMSZ5221ET1/D  

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