MMT05A310T3 [ONSEMI]
Thyristor Surge Protectors High Voltage Bidirectional TSPD; 晶闸管浪涌保护器高压双向TSPD
| 型号： | MMT05A310T3 |
| 厂家： | 
ONSEMI |
| 描述： | Thyristor Surge Protectors High Voltage Bidirectional TSPD |
| 文件： | 总6页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMT05A230T3,
MMT05A260T3,
MMT05A310T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
http://onsemi.com
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
BIDIRECTIONAL TSPD
50 AMP SURGE
265 thru 365 VOLTS
Secondary protection applications for electronic telecom equipment
at customer premises.
• High Surge Current Capability: 50 Amps 10 x 1000 µsec; for
Controlled Temperature Environments in the SMA package
MT1
MT2
• The MMT05A230T3 Series is used to help equipment meet various
regulatory requirements including: Telcordia 1089, ITU K.20 &
K.21, IEC 950 and FCC Part 68
• Bidirectional Protection in a Single Device
• Little Change of Voltage Limit with Transient Amplitude or Rate
• Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
SMA
(No Polarity)
CASE 403D
• Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
MARKING DIAGRAM
• Surface Mount Technology (SMT)
•
Indicates UL Registered − File #E210057
xxx
• Device Marking: MMT05A230T3: PBF; MMT05A260T3: PBG;
AYW
MMT05A310T3: PBJ
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
xxx = Specific Device Code
A
Y
= Assembly Location
= Year
Rating
Symbol
Value
Unit
Off−State Voltage − Maximum
V
DM
Volts
W
= Work Week
MMT05A230T3
MMT05A260T3
MMT05A310T3
"170
"200
"270
ORDERING INFORMATION
Maximum Pulse Surge Short Circuit
Current Non−Repetitive
Double Exponential Decay Waveform
(Notes 1 and 2)
A(pk)
†
Device
Package
Shipping
MMT05A230T3
SMA
12 mm Tape and Reel
(5 K/Reel)
8 x 20 µsec
10 x 160 µsec
10 x 560 µsec
10 x 1000 µsec
I
I
I
I
"150
"100
"70
PPS1
PPS2
PPS3
PPS4
MMT05A260T3
MMT05A310T3
SMA
SMA
12 mm Tape and Reel
(5 K/Reel)
"50
12 mm Tape and Reel
(5 K/Reel)
Maximum Non−Repetitive Rate of
Change of On−State Current Double
Exponential Waveform,
di/dt
"100
A/µs
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
I
PK
= 50 A, P = 15 ms
W
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
March, 2004 − Rev. 4
MMT05A230T3/D
MMT05A230T3, MMT05A260T3, MMT05A310T3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Operating Temperature Range
Blocking or Conducting State
T
J1
−40 to +125
°C
Overload Junction Temperature − Maximum Conducting State Only
T
+175
2000
260
°C
W
J2
Instantaneous Peak Power Dissipation (I = 50A, 10x1000 µsec @ 25°C)
P
PK
pk
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
°C
L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics
Breakover Voltage (Both polarities)
Symbol
V
Min
Typ
Max
Unit
Volts
(BO)
(dv/dt = 100 V/µs, I = 1.0 A, Vdc = 1000 V)
MMT05A230T3
MMT05A260T3
MMT05A310T3
−
−
−
−
−
−
265
320
365
SC
(+65°C)
MMT05A230T3
MMT05A260T3
MMT05A310T3
−
−
−
−
−
−
280
340
400
Breakover Voltage (Both polarities)
V
(BO)
Volts
(f = 60 Hz, I = 1.0 A(rms), V = 1000 V(rms),
R = 1.0 kΩ, t = 0.5 cycle) (Note 3)
I
MMT05A230T3
MMT05A260T3
MMT05A310T3
−
−
−
−
−
−
265
320
365
SC
OC
(+65°C)
MMT05A230T3
MMT05A260T3
MMT05A310T3
−
−
−
−
−
−
280
340
400
Breakover Voltage Temperature Coefficient
dV
(BO)
/dT
−
0.08
−
%/°C
J
Breakdown Voltage (I
= 1.0 mA) Both polarities
V
(BR)
Volts
(BR)
MMT05A230T3
MMT05A260T3
MMT05A310T3
−
−
−
190
240
280
−
−
−
Off State Current (V = 50 V) Both polarities
I
I
−
−
−
−
2.0
5.0
µA
Volts
mA
D1
D1
D2
Off State Current (V = V ) Both polarities
D2
DM
On−State Voltage (I = 1.0 A)
V
−
1.53
230
340
−
3.0
T
T
(PW ≤ 300 µs, Duty Cycle ≤ 2%) (Note 3)
Breakover Current (f = 60 Hz, V
Both polarities
= 1000 V(rms), R = 1.0 kΩ)
I
BO
−
−
DM
S
Holding Current (Both polarities)
= 500 Volts; I (Initiating Current) = "1.0 Amp
(Note 3)
I
150
2000
−
mA
H
V
S
T
Critical Rate of Rise of Off−State Voltage
(Linear waveform, V = Rated V , T = 25°C)
dv/dt
−
V/µs
pF
D
BR
J
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V(rms) Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V(rms) Signal)
C
−
−
22
35
−
50
O
3. Measured under pulse conditions to reduce heating.
http://onsemi.com
2
MMT05A230T3, MMT05A260T3, MMT05A310T3
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
Parameter
V
TM
I , I
D1 D2
Off State Leakage Current
Off State Blocking Voltage
Breakdown Voltage
Breakover Voltage
Breakover Current
Holding Current
V
(BO)
V
V
V
, V
D2
D1
I
H
BR
BO
I
(BO)
I
I
D2
D1
I
I
BO
+ Voltage
H
V
V
D2
V
(BR)
D1
V
TM
On State Voltage
100
340
320
300
280
260
240
220
200
V
D1
= 50V
MMT05A310T3
MMT05A260T3
10
1
MMT05A230T3
0.1
180
160
0.01
0
20
40
60
80
100
120
140
−2 −10
0
10
20
30
40
50
60
70
0
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 1. Off−State Current versus Temperature
Figure 2. Typical Breakdown Voltage versus
Temperature
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3
MMT05A230T3, MMT05A260T3, MMT05A310T3
800
340
320
300
280
260
240
220
200
MMT05A310T3
700
MMT05A260T3
600
500
MMT05A230T3
400
300
200
100
180
160
−2 −10
0
10
20
30
40
50
60
70
−2 −10
0
10
20
30
40
50
60
70
0
0
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 3. Typical Breakover Voltage versus
Temperature
Figure 4. Typical Holding Current versus
Temperature
100
t = rise time to peak value
r
t = decay time to half value
f
Peak
Value
100
10
Half Value
50
1
0.001
0
0.01
0.1
TIME (sec)
1
10
100
0 t
r
t
f
TIME (ms)
Figure 5. Exponential Decay Pulse Waveform
Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
http://onsemi.com
4
MMT05A230T3, MMT05A260T3, MMT05A310T3
TIP
GND
TELECOM
OUTSIDE
PLANT
EQUIPMENT
RING
PPTC*
TIP
GND
TELECOM
OUTSIDE
PLANT
EQUIPMENT
RING
PPTC*
*Polymeric PTC (positive temperature coefficient) overcurrent protection device
HEAT COIL
TIP
TELECOM
OUTSIDE
PLANT
GND
EQUIPMENT
RING
HEAT COIL
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5
MMT05A230T3, MMT05A260T3, MMT05A310T3
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS
403D−02.
S
A
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.06
2.29
1.91
1.27
0.05
0.15
0.76
4.83
MAX
4.57
2.92
2.41
1.63
0.15
0.41
1.52
5.59
A
B
C
D
H
J
0.160
0.090
0.075
0.050
0.002
0.006
0.030
0.190
0.180
0.115
0.095
0.064
0.006
0.016
0.060
0.220
D
B
POLARITY INDICATOR OPTIONAL
AS NEEDED
K
S
C
H
J
K
SOLDERING FOOTPRINT*
0.157
4.0
0.0787
2.0
inches
mm
0.0787
2.0
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMT05A230T3/D
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