MMT08B260T3G [ONSEMI]
Thyristor Surge Protectors High Voltage Bidirectional TSPD; 晶闸管浪涌保护器高压双向TSPD型号: | MMT08B260T3G |
厂家: | ONSEMI |
描述: | Thyristor Surge Protectors High Voltage Bidirectional TSPD |
文件: | 总5页 (文件大小:60K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMT08B260T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
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BIDIRECTIONAL TSPD
80 AMP SURGE, 260 VOLTS
(
)
Secondary protection applications for electronic telecom equipment
at customer premises.
Features
MT1
MT2
• High Surge Current Capability: 80 Amps 10 x 1000 msec, for
Controlled Temperature Environments
• The MMT08B260T3 is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
• Bidirectional Protection in a Single Device
• Little Change of Voltage Limit with Transient Amplitude or Rate
• Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
• Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
MARKING DIAGRAM
• Surface Mount Technology (SMT)
•
Indicates UL Registered − File #E210057
• Pb−Free Package is Available
AYWW
RPCG G
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
V
Off−State Voltage − Maximum
V
200
DM
Maximum Pulse Surge Short Circuit Current
Non−Repetitive
A(pk)
A
Y
WW
= Assembly Location
= Year
= Work Week
Double Exponential Decay Waveform
(−25°C Initial Temperature) (Notes 1 & 2)
2 x 10 msec
RPCG = Device Code
I
250
250
150
150
100
100
80
PPS1
PPS2
PPS3
PPS4
PPS5
PPS6
PPS7
G
= Pb−Free Package
I
I
I
I
I
I
8 x 20 msec
10 x 160 msec
10 x 360 msec
10 x 560 msec
10 x 700 msec
10 x 1000 msec
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
Non−Repetitive Peak On−State Current
60 Hz Full Sign Wave
I
32
A(pk)
TSM
MMT08B260T3
MMT08B260T3G
SMB
2500 Tape & Reel
2500 Tape & Reel
Maximum Non−Repetitive Rate of Change of
On−State Current Exponential Waveform,
di/dt
300
A/ms
SMB
(Pb−Free)
I
< 100A
pk
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Allow cooling before testing second polarity.
Preferred devices are recommended choices for future use
2. Measured under pulse conditions to reduce heating.
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 3
MMT08B260T3/D
MMT08B260T3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
−40 to +125
+175
Unit
°C
Operating Temperature Range Blocking or Conducting State
T
J1
Overload Junction Temperature − Maximum Conducting State Only
T
°C
J2
Instantaneous Peak Power Dissipation (I = 50 A, 10x1000 msec @ 25°C)
P
2000
W
pk
PK
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
260
°C
L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to
J
forward and reverse polarities.
Characteristics
Breakover Voltage (Both polarities)
Symbol
Min
Typ
Max
Unit
V
V
(BO)
(dv/dt = 100 V/ms, I = 1.0 A, Vdc = 1000 V)
−
−
−
−
320
340
SC
(+65°C)
Breakover Voltage (Both polarities)
V
V
(BO)
(f = 60 Hz, I = 1.0 A(rms), V
= 1000 V(rms),
SC
OC
R = 1.0 kW, t = 0.5 cycle) (Note 3)
(+65°C)
−
−
−
−
320
340
I
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I = 1.0 mA) Both polarities
dV
/dT
−
−
0.08
260
−
−
%/°C
V
(BO)
J
V
(BR)
(BR)
Off State Current (V = 50 V) Both polarities
I
I
−
−
−
−
2.0
5.0
mA
D1
D1
D2
Off State Current (V = V ) Both polarities
D2
DM
On−State Voltage (I = 1.0 A)
V
−
−
1.53
230
3.0
−
V
T
T
(PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 3)
Breakover Current (f = 60 Hz, V
Both polarities
= 1000 V(rms), R = 1.0 kW)
I
mA
mA
V/ms
pF
DM
S
BO
Holding Current (Both polarities) (Note 3)
= 500 Volts; I (Initiating Current) = "1.0 Amp
I
150
−
300
−
−
−
H
V
S
T
Critical Rate of Rise of Off−State Voltage
dv/dt
2000
−
−
(Linear waveform, V = Rated V , T = 25°C)
D
BR
J
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 mV rms Signal)
C
O
−
−
25
50
30
55
3. Measured under pulse conditions to reduce heating.
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
Parameter
V
TM
I
, I
D1 D2
Off State Leakage Current
Off State Blocking Voltage
Breakdown Voltage
Breakover Voltage
Breakover Current
Holding Current
V
(BO)
V
V
V
, V
D2
D1
I
BR
BO
H
I
(BO)
I
I
D2
D1
I
I
BO
+ Voltage
H
V
V
V
(BR)
D1
D2
V
On State Voltage
TM
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2
MMT08B260T3
100
340
320
300
280
260
240
220
200
V
= 50V
D1
10
1
0.1
180
160
0.01
0
20
40
60
80
100
120
140
−50
−25
0
25
50
75
100
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 1. Off−State Current versus Temperature
Figure 2. Breakdown Voltage versus Temperature
1000
380
360
340
320
300
280
260
240
900
800
700
600
500
400
300
200
100
220
200
−50
−25
0
25
50
75
100
125
−50
−25
0
25
50
75
100
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 3. Breakover Voltage versus Temperature
Figure 4. Holding Current versus Temperature
100
t = rise time to peak value
r
t = decay time to half value
f
Peak
Value
100
10
Half Value
50
1
0.001
0
0.01
0.1
TIME (sec)
1
10
100
0 t
r
t
f
TIME (ms)
Figure 5. Exponential Decay Pulse Waveform
Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
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3
MMT08B260T3
TIP
GND
TELECOM
OUTSIDE
PLANT
EQUIPMENT
RING
PPTC*
TIP
GND
TELECOM
OUTSIDE
PLANT
EQUIPMENT
RING
PPTC*
*Polymeric PTC (positive temperature coefficient) overcurrent protection device
HEAT COIL
TIP
TELECOM
OUTSIDE
PLANT
GND
EQUIPMENT
RING
HEAT COIL
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4
MMT08B260T3
PACKAGE DIMENSIONS
SMB
CASE 403C−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
S
A
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.06
3.30
1.90
1.96
MAX
4.57
3.81
2.41
2.11
0.152
0.30
1.27
A
B
C
D
H
J
0.160
0.130
0.075
0.077
0.180
0.150
0.095
0.083
D
B
0.0020 0.0060 0.051
0.006
0.030
0.012
0.050
0.15
0.76
K
P
S
0.020 REF
0.51 REF
0.205
0.220
5.21
5.59
C
H
J
K
P
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
mm
inches
ǒ
Ǔ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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MMT08B260T3/D
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