MMT10B350T3 [ONSEMI]

Thyristor Surge Protectors High Voltage Bidirectional TSPD; 晶闸管浪涌保护器高压双向TSPD


型号：	MMT10B350T3
厂家：	ONSEMI
描述：	Thyristor Surge Protectors High Voltage Bidirectional TSPD 晶闸管浪涌保护器高压双向TSPD 光电二极管高压
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MMT10B350T3

Preferred Devices

Thyristor Surge Protectors

High Voltage Bidirectional TSPD

These Thyristor Surge Protective devices (TSPD) prevent

overvoltage damage to sensitive circuits by lightning, induction and

power line crossings. They are breakover−triggered crowbar

protectors. Turn−off occurs when the surge current falls below the

holding current value.

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(

)

BIDIRECTIONAL TSPD

100 AMP SURGE, 350 VOLTS

Secondary protection applications for electronic telecom equipment

at customer premises.

Features

• High Surge Current Capability: 100 Amps 10 x 1000 msec, for

Controlled Temperature Environments

MT1

MT2

• The MMT10B350T3 Series is used to help equipment meet various

regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,

IEC 950, UL 1459 & 1950 and FCC Part 68.

• Bidirectional Protection in a Single Device

• Little Change of Voltage Limit with Transient Amplitude or Rate

• Freedom from Wearout Mechanisms Present in Non−Semiconductor

Devices

• Fail−Safe, Shorts When Overstressed, Preventing Continued

Unprotected Operation

SMB

(No Polarity)

(Essentially JEDEC DO−214AA)

CASE 403C

• Surface Mount Technology (SMT)

MARKING DIAGRAM

•

Indicates UL Recognized − File #E210057

• Pb−Free Package is Available

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

AYWW

RPDM G

Rating

Symbol Value Unit

Off−State Voltage − Maximum

300

Maximum Pulse Surge Short Circuit Current

Non−Repetitive

A(pk)

= Assembly Location

= Year

= Work Week

Double Exponential Decay Waveform

(Notes 1 and 2)

10 x 1000 msec

−25°C Initial Temperature

"100

"500

"200

"180

PPS1

PPS2

PPS3

PPS4

RPDM = Device Code

2 x 10 msec

= Pb−Free Package

10 x 160 msec

10 x 700 msec

(Note: Microdot may be in either location)

Maximum Non−Repetitive Rate of Change of

On−State Current Double Exponential Waveform,

R = 2.4 W, L = 2.0 mH, C = 2.0 mF, I = 110 A

di/dt

"100 A/ms

ORDERING INFORMATION

†

Device

Package

Shipping

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MMT10B350T3

MMT10B350T3G

SMB

2500/Tape & Reel

SMB

(Pb−Free)

1. Allow cooling before testing second polarity.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

2. Measured under pulse conditions to reduce heating.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 2

MMT10B350T3/D

MMT10B350T3

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

−40 to +125

+175

Unit

°C

Operating Temperature Range Blocking or Conducting State

Overload Junction Temperature − Maximum Conducting State Only

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

°C

260

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to

forward and reverse polarities.

Characteristics

Symbol

Min

Typ

Max

Unit

Breakover Voltage (Both polarities)

(BO)

(dv/dt = 100 V/ms, I = 1.0 A, Vdc = 1000 V)

−

400

412

(+65°C)

Breakover Voltage (Both polarities)

(BO)

(f = 60 Hz, I = 1.0 A(rms), V

= 1000 V(rms),

−

400

R = 1.0 kW, t = 0.5 cycle) (Note 3)

(+65°C)

−

412

−

Breakover Voltage Temperature Coefficient

Breakdown Voltage (I = 1.0 mA) Both polarities

/dT

0.12

350

V/°C

(BO)

−

(BR)

Off State Current (V = 50 V) Both polarities

−

2.0

5.0

Off State Current (V = V ) Both polarities

On−State Voltage (I = 1.0 A)

−

1.82

475

300

−

5.0

−

(PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 3)

Breakover Current (f = 60 Hz, V

Both polarities

= 1000 V(rms), R = 1.0 kW)

V/ms

Holding Current (Both polarities) (Note 3)

= 500 V; I (Initiating Current) = "1.0 A

150

2000

−

Critical Rate of Rise of Off−State Voltage

dv/dt

−

(Linear waveform, V = Rated V , T = 25°C)

Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)

Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)

−

3. Measured under pulse conditions to reduce heating.

Voltage Current Characteristic of TSPD

(Bidirectional Device)

+ Current

Symbol

Parameter

, I

D1 D2

Off State Leakage Current

Off State Blocking Voltage

Breakdown Voltage

Breakover Voltage

Breakover Current

Holding Current

(BO)

, V

(BO)

+ Voltage

(BR)

On State Voltage

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MMT10B350T3

100

400

390

= 50V

380

370

1.0

360

350

340

0.1

0.01

330

320

0.001

−60 −40 −20

40 60 80 100 120 140

−60 −40 −20

20 40 60 80 100 120 140

TEMPERATURE (°C)

Figure 1. Typical Off−State Current versus

Temperature

Figure 2. Typical Breakdown Voltage versus

Temperature

440

600

550

500

430

420

410

450

400

350

300

250

200

150

100

400

390

380

−60 −40 −20

20 40

80 100 120 140

−40 −20

80 100 120

TEMPERATURE (°C)

Figure 3. Maximum Breakover Voltage versus

Temperature

Figure 4. Typical Holding Current versus

Temperature

420

t = rise time to peak value

400

380

360

340

320

300

280

260

240

220

t = decay time to half value

Peak

Value

100

Half Value

100

1000

100000

0 t

TIME (sec)

TIME (ms)

Figure 5. Exponential Decay Pulse Waveform

Figure 6. Peak Surge On−State Current versus

Surge Current Duration, Sinusoidal Waveform

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MMT10B350T3

TIP

GND

TELECOM

EQUIPMENT

OUTSIDE

PLANT

RING

PPTC*

TIP

GND

TELECOM

EQUIPMENT

OUTSIDE

PLANT

RING

PPTC*

*Polymeric PTC (positive temperature coefficient) overcurrent protection device

HEAT COIL

TIP

TELECOM

EQUIPMENT

OUTSIDE

PLANT

GND

RING

HEAT COIL

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MMT10B350T3

PACKAGE DIMENSIONS

SMB

CASE 403C−01

ISSUE A

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. D DIMENSION SHALL BE MEASURED WITHIN

DIMENSION P.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

4.06

3.30

1.90

1.96

MAX

4.57

3.81

2.41

2.11

0.152

0.30

1.27

0.160

0.130

0.075

0.077

0.180

0.150

0.095

0.083

0.0020 0.0060 0.051

0.006

0.030

0.012

0.050

0.15

0.76

0.020 REF

0.51 REF

0.205

0.220

5.21

5.59

SOLDERING FOOTPRINT*

2.261

0.089

2.743

0.108

2.159

0.085

inches

SCALE 8:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

MMT10B350T3/D

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MMT10B350T3 [ONSEMI]

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