MOC256R2M [ONSEMI]
8 引脚 SOIC 交流输入光电晶体管输出光耦合器;
| 型号： | MOC256R2M |
| 厂家： | 
ONSEMI |
| 描述： | 8 引脚 SOIC 交流输入光电晶体管输出光耦合器 输入元件 输出元件 晶体管 光电晶体管 |
| 文件： | 总7页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
8-pin SOIC AC Input
Phototransistor Output
Optocoupler
SOIC8
CASE 751DZ
MOC256M
MARKING DIAGRAM
Description
The MOC256M is an AC input phototransistor opto−coupler. The
device consists of two infrared emitters connected in anti−parallel and
coupled to a silicon NPN phototransistor detector. It is designed for
applications requiring the detection or monitoring of AC signals. The
device is constructed with a standard SOIC−8 footprint.
ON 256
V XYYS
256 = Device Number
V
= DIN EN/IEC60747−5−5 Option (only appears
on component ordered with this option)
= One−Digit Year Code, e.g., “4”
Features
X
YY = Digit Work Week, Ranging from “01” to “53”
• Bidirectional AC Input
S
= Assembly Package Code
♦ Protection Against Reversed DC Bias
• Guaranteed CTR Symmetry of 2:1 Maximum
• Convenient Plastic SOIC−8 Surface Mountable Package Style, with
SCHEMATIC
0.050” Lead Spacing
• Safety and Regulatory Approvals:
♦ UL1577, 2,500 VAC
for 1 Minute
RMS
♦ DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage
AC IN 1
8 N/C
• These are Pb−Free Devices
AC IN 2
N/C 3
7 BASE
6 COLLECTOR
5 EMITTER
N/C 4
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
December, 2022 − Rev. 7
MOC256M/D
MOC256M
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation”
only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage
<150 V
<300 V
I–IV
I–III
RMS
RMS
Climatic Classification
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Input−to−Output Test Voltage, Method A, V x 1.6 = V
Value
Unit
V
PR
,
904
V
peak
IORM
PR
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = V
,
1060
V
peak
PR
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
565
4000
≥4
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
°C
External Clearance
≥4
DTI
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
Input Current (Note 1)
≥0.4
150
200
300
T
S
I
mA
mW
W
S,INPUT
P
Output Power (Note 1)
S,OUTPUT
9
R
Insulation Resistance at T , V = 500 V (Note 1)
>10
IO
S
IO
1. Safety limit values – maximum values allowed in the event of a failure.
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Value
Unit
TOTAL DEVICE
T
Storage Temperature
−40 to +125
−40 to +100
−40 to +125
260 for 10 seconds
240
°C
°C
STG
T
Ambient Operating Temperature
Junction Temperature Range
Lead Solder Temperature
A
T
J
°C
T
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
D
A
Derate Above 25°C
2.94
mW/°C
EMITTER
I
Continuous Forward Current
Forward Current – Peak (PW = 100 ms, 120 pps)
Reverse Voltage
60
1.0
6.0
90
mA
A
F
I (pk)
F
V
P
V
R
D
LED Power Dissipation @ T = 25°C
mW
mW/°C
A
Derate Above 25°C
0.8
DETECTOR
I
Continuous Collector Current
Collector−Emitter Voltage
Collector−Base Voltage
150
30
mA
V
C
V
V
V
CEO
CBO
ECO
70
V
Emitter−Collector Voltage
7
V
P
D
Detector Power Dissipation @ T = 25°C
150
1.76
mW
mW/°C
A
Derate Above 25°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
www.onsemi.com
2
MOC256M
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
EMITTER
V
Input Forward Voltage
I = 10 mA
−
−
1.2
20
1.5
−
V
F
F
C
Input Capacitance
V = 0 V, f = 1 MHz
pF
IN
DETECTOR
I
Collector−Emitter Dark Current
V
V
V
= 10 V, T = 25°C
−
−
1.0
1.0
0.2
100
120
10
100
−
nA
mA
nA
V
CEO1
CE
CE
CB
A
I
= 10 V, T = 100°C
CEO2
A
I
Collector−Base Dark Current
= 10 V
−
−
CBO
BV
BV
BV
C
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Collector Breakdown Voltage
Collector−Emitter Capacitance
Collector−Base Capacitance
I
C
I
C
= 10 mA
30
70
5
−
CEO
CBO
ECO
CE
= 100 mA
−
V
I = 100 mA
E
−
V
f = 1.0 MHz, V = 0
−
7
−
pF
pF
pF
CE
C
f = 1.0 MHz, V = 0
−
20
−
CB
CB
C
Emitter−Base Capacitance
f = 1.0 MHz, V = 0
−
10
−
EB
EB
COUPLED
CTR
Current Transfer Ratio
I = 10 mA, V = 10 V
20
150
−
−
%
V
F
CE
Output−Collector Current Symmetry
0.5
2.0
IC@IF + )10 mA, VCE + 10 V
IC@IF + *10 mA, VCE + 10 V
ǒ
Ǔ
V
Collector−Emitter Saturation Voltage
I
C
= 0.5 mA, I = 10 mA
−
0.1
0.4
CE (SAT)
F
ISOLATION CHARACTERISTICS
V
ISO
C
ISO
R
ISO
Input−Output Isolation Voltage
Isolation Capacitance
t = 1 Minute
2500
−
−
0.2
−
−
−
−
VAC
RMS
V
I−O
V
I−O
= 0 V, f = 1 MHz
pF
11
Isolation Resistance
=
500 VDC, T = 25°C
10
W
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
MOC256M
TYPICAL PERFORMANCE CURVES
100
80
10
V
= 5 V
CE
NORMALIZED TO I = 10 mA
F
60
40
1
0.1
20
0
−20
−40
−60
−80
−100
0.01
−2.0 −1.5 −1.0 −0.5 0.0 0.5 1.0 1.5 2.0
0.1
1
10
100
V , INPUT VOLTAGE (V)
F
I , LED INPUT CURRENT (mA)
F
Figure 1. Input Current vs. Input Voltage
Figure 2. Output Current vs. Input Current
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1
I = 10 mA
NORMALIZED TO V = 5 V
0.2
0.0
F
NORMALIZED TO T = 25°C
A
CE
0.1
−80 −60 −40 −20
0
20 40 60 80 100 120
0
1
2
3
4
5
6
7
8
9
10
T , AMBIENT TEMPERATURE (°C)
A
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Current vs. Ambient Temperature
Figure 4. Output Current vs. Collector−Emitter
Voltage
10000
V
CE
= 10 V
1000
100
10
1
0.1
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
A
Figure 5. Dark Current vs. Ambient Temperature
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4
MOC256M
REFLOW PROFILE
Max. Ramp−up Rate = 3°C/S
Max. Ramp−down Rate = 6°C/S
TP
TL
280
260
220
200
180
160
140
120
100
80
tP
Tsmax
tL
Preheat Area
Tsmin
ts
60
40
20
0
120
240
360
Time 25°C to Peak
Time (seconds)
Figure 6. Reflow Profile
Table 1.
Profile Freature
Pb−Free Assembly Profile
150°C
Temperature Minimum (Tsmin)
Temperature Maximum (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60−120 seconds
3°C/second maximum
217°C
S
Ramp−up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60−150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp−down Rate (T to T )
6°C/second maximum
8 minutes maximum
P
L
Time 25°C to Peak Temperature
ORDERING INFORMATION
†
Part Number
Package
Shipping
MOC256M
Small Outline 8−Pin, SOIC8
(Pb−Free)
100 Units / Tube
2500 Units / Tape & Reel
100 Units / Tube
MOC256R2M
MOC256VM
Small Outline 8−Pin, SOIC8
(Pb−Free)
Small Outline 8−Pin, SOIC8, DIN EN/IEC60747−5−5 Option
(Pb−Free)
MOC256R2VM
Small Outline 8−Pin, SOIC8, DIN EN/IEC60747−5−5 Option
(Pb−Free)
2500 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751DZ
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13733G
SOIC8
PAGE 1 OF 1
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