MOC3073SR2VM [ONSEMI]

三端双向可控硅开关驱动器光耦合器,6 引脚 DIP 随机相(峰值 800 V);
MOC3073SR2VM
型号: MOC3073SR2VM
厂家: ONSEMI    ONSEMI
描述:

三端双向可控硅开关驱动器光耦合器,6 引脚 DIP 随机相(峰值 800 V)

开关 驱动 光电 可控硅开关 驱动器
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中文:  中文翻译
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s  
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
MOC3071M, MOC3072M  
6-Pin DIP Random-Phase Triac  
Driver Optocoupler (800 Volt Peak)  
The MOC3071M and MOC3072M consist of a GaAs infrared emitting  
diode optically coupled to a non-zero- crossing silicon bilateral AC switch  
(triac). These devices isolate low voltage logic from 240 VAC lines to  
provide random phase control of high current triacs or thyristors. These  
devices feature greatly enhanced static dv/dt capability to ensure stable  
switching performance of inductive loads.  
www.onsemi.com  
Features  
Excellent IFT StabilityIR Emitting Diode Has Low Degradation  
800 V Peak Blocking Voltage  
Safety and RegulatoryApprovals  
UL1577, 4,170 VACRMS for 1 Minute  
DIN EN/IEC60747-5-5 (pending approval)  
MDIP 6L WHITE  
MARKING DIAGRAM  
Typical Applications  
Solenoid/ValveControls  
Lamp Ballasts  
Static AC Power Switch  
Interfacing Microprocessors to 240 VAC Peripherals  
Solid State Relay  
1. F  
= Fairchild Logo  
2. MOC3071 =Specific Device Code  
3. V  
4. X  
5. YY  
6. Q  
=DIN EN/IEC60747-5-5 Option  
Incandescent Lamp Dimmers  
Temperature Controls  
=One-Digit Year Code  
=Two-Digit Work Week  
=Assembly Package Code  
Motor Controls  
PIN CONNECTIONS  
ORDERING INFORMATION  
See detailed ordering and shipping information page 9 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2016  
November 2016 - Rev. 1  
1
Publication Order Number:  
MOC3071M/D  
MOC3071M, MOC3072M  
SAFETY AND INSULATIONS RATINGS  
As per DIN EN/IEC 60747-5-5 (pending approval), this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.  
Compliance with the safety ratings shall be ensured by means of protective circuits.  
Parameter  
Characteristics  
< 150 V  
< 300 V  
IIV  
IIV  
RMS  
RMS  
Installation Classifications per DIN VDE 0110/1.89 Table 1,  
For Rated Mains Voltage  
Climatic Classification  
40/85/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
175  
Symbol  
Parameter  
Input-to-Output Test Voltage, Method A, V  
Value  
Unit  
x 1.6 = V , Type and  
PR  
IORM  
Sample Test with t = 10 s, Partial Discharge < 5 pC  
V
V
1360  
1594  
peak  
peak  
m
V
PR  
Input-to-Output Test Voltage, Method B, V  
x 1.875 = V , 100%  
PR  
IORM  
Production Test with t = 1 s, Partial Discharge < 5 pC  
m
V
V
V
Maximum Working Insulation Voltage  
Highest Allowable Over-Voltage  
850  
6000  
7  
IORM  
peak  
peak  
V
IOTM  
External Creepage  
mm  
mm  
mm  
mm  
Ω
External Clearance  
7  
External Clearance (for Option TV, 0.4" Lead Spacing)  
Distance Through Insulation (Insulation Thickness)  
Insulation Resistance at T , V = 500 V  
10  
0.5  
DTI  
9
R
> 10  
S
IO  
IO  
www.onsemi.com  
2
MOC3071M, MOC3072M  
MAXIMUM RATINGS (Note 1)  
T
= 25°C unless otherwise specified.  
A
Symbol  
Parameters  
Value  
Unit  
Total Device  
T
Storage Temperature  
-40 to +150  
-40 to +85  
-40 to +100  
260 for 10 seconds  
330  
°C  
°C  
STG  
T
Operating Temperature  
Junction Temperature Range  
Lead Solder Temperature  
OPR  
T
J
°C  
T
°C  
SOL  
Total Device Power Dissipation at 25°C Ambient  
Derate Above 25°C  
mW  
mW/°C  
P
D
4.4  
Emitter  
I
Continuous Forward Current  
Reverse Voltage  
60  
3
mA  
V
F
V
R
Total Power Dissipation at 25°C Ambient  
Derate Above 25°C  
100  
1.33  
mW  
P
D
mW/°C  
Detector  
V
Off-State Output Terminal Voltage  
800  
1
V
A
DRM  
I
Peak Non-Repetitive Surge Current (Single Cycle 60 Hz Sine Wave)  
Total Power Dissipation at 25°C Ambient  
Derate Above 25°C  
TSM  
300  
4
mW  
mW/°C  
P
D
1. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device  
functionality should not be assumed, damage may occur and reliability may be affected.  
www.onsemi.com  
3
 
MOC3071M, MOC3072M  
ELECTRICAL CHARACTERISTICS  
T
= 25°C unless otherwise specified.  
A
INDIVIDUAL COMPONENT CHARACTERISTICS  
Symbol  
Parameters  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
EMITTER  
V
F
I
= 10 mA  
= 3 V  
Input Forward Voltage  
1.18  
0.05  
1.50  
100  
V
F
I
V
Reverse Leakage Current  
µA  
R
R
DETECTOR  
I
Peak Blocking Current, Either Direction  
Peak On-State Voltage, Either Direction  
Critical Rate of Rise of Off-State Voltage  
10  
200  
2.5  
nA  
V
V
I
= 800 V, I = 0 (Note 2)  
F
DRM  
DRM  
= 100 mA peak, I = 0  
V
2.2  
TM  
TM  
F
I
= 0, V  
= 800 V)  
DRM  
dv/dt  
1000  
V/µs  
F
TRANSFER CHARACTERISTICS  
Symbol  
DC Characteristics  
Test Conditions  
Device  
Min.  
Typ.  
Max.  
15  
Unit  
mA  
µA  
MOC3071M  
MOC3072M  
All  
Main Terminal  
Voltage = 3 V (Note 3)  
I
LED Trigger Current, Either Direction  
Holding Current, Either Direction  
FT  
10  
I
540  
H
ISOLATION CHARACTERISTICS  
Symbol  
Characteristic  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
Input-Output Isolation Voltage (Note 4) f = 60 Hz, t = 1 Minute  
4170  
VACRMS  
ISO  
11  
R
V
= 500 VDC  
Isolation Resistance  
Isolation Capacitance  
Ω
ISO  
I-O  
10  
C
V = 0 V, f = 1 MHz  
0.2  
pF  
ISO  
2. Test voltage must be applied within dv/dt rating.  
3. All devices are guaranteed to trigger at an I value less than or equal to max I . Therefore, the recommended operating I lies between  
F
FT  
F
maximum I (15 mA for MOC3071M, 10 mA for MOC3072M) and absolute maximum I (60 mA).  
FT  
F
4. Isolation voltage, V  
common.  
, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are  
ISO  
www.onsemi.com  
4
 
 
MOC3071M, MOC3072M  
TYPICAL CHARACTERISTICS  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
400  
300  
200  
100  
0
TA = -40 °C  
-100  
-200  
-300  
TA = 25 °C  
TA = 100 °C  
-400  
-3  
-2  
-1  
0
1
2
3
1
10  
IF - LED FORWARD CURRENT (mA)  
100  
VTM - ON-STATE VOLTAGE (V)  
Figure 1. LED Forward Voltage vs. Forward Current  
Figure 2. On-State Characteristics  
1.4  
15  
10  
5
NORMALIZED TO TA = 25°C  
NORMALIZED TO PW = 100µs  
1.2  
1.0  
0.8  
0.6  
0
1
10  
100  
-40  
-20  
0
20  
40  
60  
80  
100  
PW - LED TRIGGER PULSE WIDTH (µs)  
TA - AMBIENT TEMPERATURE (°C)  
Figure 3. LED Trigger Current vs. Ambient Temperature  
Figure 4. LED Trigger Current vs. LED Pulse Width  
4
10000  
NORMALIZED TO TA = 25°C  
VDRM = 800 V  
1000  
100  
10  
3
2
1
0
1
0.1  
-40  
-40  
-20  
0
20  
40  
60  
80  
100  
-20  
0
20  
40  
60  
80  
100  
TA - AMBIENT TEMPERATURE (°C)  
TA - AMBIENT TEMPERATURE (°C)  
Figure 5. Holding Current vs. Ambient Temperature  
Figure 6. Leakage Current vs. Ambient Temperature  
www.onsemi.com  
5
 
 
MOC3071M, MOC3072M  
APPLICATIONS INFORMATION  
Basic Triac Driver Circuit  
LED Trigger Current vs. Pulse Width  
The random phase triac drivers MOC3071M and  
MOC3072M can allow snubberless operations in  
applications where load is resistive and the external  
generated noise in the AC line is below its guaranteed  
dv/dt withstand capability. For these applications, a  
snubber circuit is not necessary when a noise insensitive  
power triac is used. Figure 7 shows the circuit diagram.  
The triac driver is directly connected to the triac main  
terminal 2 and a series resistor R which limits the current  
to the triac driver. Current limiting resistor R must have a  
minimum value which restricts the current into the driver  
to maximum 1 A.  
Random phase triac drivers are designed to be phase  
controllable. They may be triggered at any phase angle  
within the AC sine wave. Phase control may be  
accomplished by an AC line zero cross detector and a  
variable pulse delay generator which is synchronized to  
the zero cross detector. The same task can be  
accomplished by a microprocessor which is synchronized  
to the AC zero crossing. The phase controlled trigger  
current may be a very short pulse which saves energy  
delivered to the input LED. LED trigger pulse currents  
shorter than 100 µs must have increased amplitude as  
shown on Figure 4. This graph shows the dependency of  
the trigger current IFT versus the pulse width. IFT in this  
graph is normalized in respect to the minimum specified  
IFT for static condition, which is specified in the device  
characteristic. The normalized IFT has to be multiplied  
with the devices guaranteed static trigger current.  
Example:  
The power dissipation of this current limiting resistor and  
the triac driver is very small because the power triac  
carries the load current as soon as the current through  
driver and current limiting resistor reaches the trigger  
current of the power triac. The switching transition times  
for the driver is only one micro second and for power  
triacs typical four micro seconds.  
IFT = 10 mA, Trigger PW = 4 µs  
IF (pulsed) = 10 mA x 3 = 30 mA  
Triac Driver Circuit for Noisy Environments  
When the transient rate of rise and amplitude are expected  
to exceed the power triacs and triac drivers maximum  
ratings a snubber circuit as shown in Figure 8 is  
recommended. Fast transients are slowed by the R-C  
snubber and excessive amplitudes are clipped by the Metal  
Oxide Varistor MOV.  
Minimum LED Off Time in Phase Control Applications  
In phase control applications, one intends to be able to  
control each AC sine half wave from 0° to 180°. Turn on  
at 0° means full power and turn on at 180° means zero  
power. This is not quite possible in reality because triac  
driver and triac have a fixed turn on time when activated  
at zero degrees. At a phase control angle close to 180°the  
driver’s turn on pulse at the trailing edge of the AC sine  
wave must be limited to end 200 µs before AC zero cross  
as shown in Figure 10. This assures that the triac driver has  
time to switch off. Shorter times may cause loss of control  
at the following half cycle.  
Triac Driver Circuit for Extremely Noisy Environments  
As specified in the noise standards IEEE472 and IEC255-  
4.  
Industrial control applications do specify a maximum  
transient noise dv/dt and peak voltage which is super-  
imposed onto the AC line voltage. In order to pass this  
environment noise test a modified snubber network as  
shown in Figure 9 is recommended.  
Static dv/dt  
Critical rate of rise of off-state voltage or static dv/dt is a  
triac characteristic that rates its ability to prevent false  
triggering in the event of fast rising line voltage transients  
when it is in the off-state. When driving a discrete power  
triac, the triac driver optocoupler switches back to off-  
state once the power triac is triggered. However, during  
the commutation of the power triac in application where  
the load is inductive, both triacs are subjected to fast rising  
voltages. The static dv/dt rating of the triac driver  
optocoupler and the commutating dv/dt rating of the  
power triac must be taken into consideration in snubber  
circuit design to prevent false triggering and commutation  
failure.  
LED Trigger Current versus Temperature  
Recommended operating LED control current IF lies  
between the guaranteed IFT and absolute maximum IF.  
Figure 3 shows the increase of the trigger current when the  
device is expected to operate at an ambient temperature  
below 25°C. Multiply the datasheet guaranteed IFT with  
the normalized IFT shown on this graph and an allowance  
for LED degradation over time.  
Example:  
IFT = 10 mA, LED degradation factor = 20%  
IF at -40°C = 10 mA x 1.25 x 120% = 15 mA  
www.onsemi.com  
6
MOC3071M, MOC3072M  
TRIAC DRIVER  
VCC  
RLED  
R
POWER TRIAC  
AC LINE  
CONTROL  
RET.  
Q
LOAD  
RLED = (VCC VFLED VSATQ) / IFT  
R = VPAC / ITSM  
Figure 7. Basic Driver Circuit  
TRIAC DRIVER  
VCC  
RLED  
R
POWER TRIAC  
RS  
CS  
AC LINE  
MOV  
CONTROL  
RET.  
Q
LOAD  
Typical Snubber values RS = 33 W, CS = 0.01 µF  
MOV (Metal Oxide Varistor) protects power triac and  
driver from transient overvoltages > VDRM max  
Figure 8. Triac Driver Circuit for Noisy Environments  
POWER TRIAC  
TRIAC DRIVER  
R
VCC  
RLED  
RS MOV  
AC LINE  
CS  
CONTROL  
RET.  
Q
LOAD  
Recommended snubber to pass IEEE472 and IEC255-4 noise tests  
RS = 47 W, CS = 0.01 µF  
Figure 9. Triac Driver Circuit for Extremely Noisy Environments  
AC Line  
0°  
180°  
LED PW  
LED Current  
LED turn off min. 200µs  
Figure 10. Minimum Time for LED Turn Off to Zero Crossing  
www.onsemi.com  
7
MOC3071M, MOC3072M  
REFLOW PROFILE  
Profile Feature  
Pb-Free Assembly Profile  
150°C  
Temperature Minimum (Tsmin)  
Temperature Maximum (Tsmax)  
200°C  
Time (t ) from (Tsmin to Tsmax)  
S
60 seconds to 120 seconds  
3°C/second maximum  
217°C  
Ramp-up Rate (T to T )  
L
P
Liquidous Temperature (T )  
L
Time (t ) Maintained Above (T )  
60 seconds to 150 seconds  
260°C +0°C / 5°C  
30 seconds  
L
L
Peak Body Package Temperature  
Time (t ) within 5°C of 260°C  
P
Ramp-down Rate (T to T )  
6°C/second maximum  
8 minutes maximum  
P
L
Time 25°C to Peak Temperature  
Figure 11. Reflow Profile  
www.onsemi.com  
8
MOC3071M, MOC3072M  
ORDERING INFORMATION (Note 5)  
Device  
Package  
Shipping  
Tube (50 Units)  
MOC3071M  
DIP 6-Pin  
SMT 6-Pin (Lead Bend)  
MOC3071SM  
Tube (50 Units)  
MOC3071SR2M  
MOC3071VM  
SMT 6-Pin (Lead Bend)  
Tape and Reel (1000 Units)  
DIP 6-Pin, DIN EN/IEC60747-5-5 Option (pending approval)  
Tube (50 Units)  
Tube (50 Units)  
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option (pending  
approval)  
MOC3071SVM  
MOC3071SR2VM  
MOC3071TVM  
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option (pending  
approval)  
Tape and Reel (1000 Units)  
Tube (50 Units)  
DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option (pending  
approval)  
5. The product orderable part number system listed in this table also applies to the MOC3072M product families.  
www.onsemi.com  
9
 
MOC3071M, MOC3072M  
PACKAGING DIMENSIONS  
8.89  
8.13-8.89  
6
4
7.62 (TYP)  
PIN 1  
1
3
15.0° (TYP)  
0.20-0.30  
0.25-0.36  
NOTES:  
A)  
NO STANDARD APPLIES TO THIS PACKAGE.  
B) ALL DIMENSIONS ARE IN MILLIMETERS.  
DIMENSIONS ARE EXCLUSIVE OF BURRS,  
MOLD FLASH, AND TIE BAR EXTRUSION  
D) DRAWING FILENAME AND REVSION: MKT-N06BREV4.  
C)  
0.38 (MIN)  
(0.86)  
2.54 BSC  
0.41-0.51  
1.02-1.78  
0.76-1.14  
6 LEAD MDIP OPTO WHITE 0.3" WIDE  
www.onsemi.com  
10  
MOC3071M, MOC3072M  
8.13-8.89  
(1.52)  
(1.78)  
(2.54)  
6
4
1
3
(0.76)  
LAND PATTERN RECOMMENDATION  
PIN 1  
5.08 (MAX)  
3.28-3.53  
0.38 (MIN)  
0.25-0.36  
0.20-0.30  
2.54 (BSC)  
0.16-0.88  
(8.13)  
(0.86)  
0.41-0.50  
1.02-1.78  
0.76-1.14  
NOTES:  
A)  
NO STANDARD APPLIES TO THIS PACKAGE.  
B) ALL DIMENSIONS ARE IN MILLIMETERS.  
DIMENSIONS ARE EXCLUSIVE OF BURRS,  
MOLD FLASH, AND TIE BAR EXTRUSION  
C)  
D) DRAWING FILENAME AND REVSION : MKT-N06CREV4.  
6-LEAD MDIP OPTO WHITE SURFACE MOUNT FORM  
www.onsemi.com  
11  
MOC3071M, MOC3072M  
8.13-8.89  
6
4
0.20-0.30  
10.16-10.80  
PIN 1  
1
3
0.25-0.36  
NOTES:  
A)  
NO STANDARD APPLIES TO THIS PACKAGE.  
B) ALL DIMENSIONS ARE IN MILLIMETERS.  
DIMENSIONS ARE EXCLUSIVE OF BURRS,  
MOLD FLASH, AND TIE BAR EXTRUSION  
D) DRAWING FILENAME AND REVSION: MKT-N06Drev4  
C)  
0.38 (MIN)  
(0.86)  
0.41-0.51  
1.02-1.78  
0.76-1.14  
2.54 BSC  
6 LEAD MDIP OPTO WHITE 0.4" LEAD SPACING  
www.onsemi.com  
12  
MOC3071M, MOC3072M  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States  
and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON  
Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further  
notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON  
Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,  
consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and  
safety  
requirements  
or  
standards,  
regardless  
of  
any  
support  
or  
applications  
information  
provided  
by  
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor  
does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in  
life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in  
the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON  
Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising  
out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was  
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