MOC8021SM [ONSEMI]
6 引脚 DIP 光电达林顿输出光耦合器 - 无基极联接;
| 型号： | MOC8021SM |
| 厂家： | 
ONSEMI |
| 描述： | 6 引脚 DIP 光电达林顿输出光耦合器 - 无基极联接 输出元件 光电 |
| 文件： | 总14页 (文件大小：491K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 2015
MOC8021M, MOC8050M
6-Pin DIP Photodarlington Optocoupler
(No Base Connection)
Features
Description
■ High BV
:
The MOC8021M and MOC8050M are photodarlington-
type optically coupled optocouplers. The devices have a
gallium arsenide infrared emitting diode coupled with a
silicon darlington phototransistor.
CEO
– Minimum 50 V (MOC8021M)
– Minimum 80 V (MOC8050M)
■ High Current Transfer Ratio:
– Minimum 1000% (MOC8021M)
– Minimum 500% (MOC8050M)
■ No Base Connection for Improved Noise Immunity
■ Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
for 1 Minute
RMS
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■ Appliances, Measuring Instruments
■ I/O Interface for Computers
■ Programmable Controllers
■ Portable Electronics
■ Interfacing and Coupling Systems of Different
Potentials and Impedance
■ Solid State Relays
Schematic
Package Outlines
N/C
ANODE 1
6
CATHODE
N/C
COLLECTOR
EMITTER
2
3
5
4
Figure 2. Package Outlines
Figure 1. Schematic
©2000 Fairchild Semiconductor Corporation
MOC8021M, MOC8050M Rev. 3.2
www.fairchildsemi.com
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
< 150 V
< 300 V
I–IV
I–IV
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
RMS
RMS
Climatic Classification
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
Input-to-Output Test Voltage, Method A, V
x 1.6 = V
,
IORM
PR
1360
V
V
peak
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC
m
V
PR
Input-to-Output Test Voltage, Method B, V
x 1.875 = V
,
IORM
PR
1594
peak
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
850
6000
≥ 7
V
V
IORM
peak
V
IOTM
peak
External Creepage
mm
mm
mm
mm
°C
External Clearance
≥ 7
External Clearance (for Option TV, 0.4" Lead Spacing)
Distance Through Insulation (Insulation Thickness)
≥ 10
≥ 0.5
175
350
800
DTI
(1)
T
Case Temperature
S
(1)
I
Input Current
mA
mW
Ω
S,INPUT
(1)
P
Output Power
S,OUTPUT
(1)
9
R
Insulation Resistance at T , V = 500 V
> 10
IO
S
IO
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©2000 Fairchild Semiconductor Corporation
MOC8021M, MOC8050M Rev. 3.2
www.fairchildsemi.com
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Unit
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
Junction Temperature
-40 to +125
-40 to +100
-40 to +125
260 for 10 seconds
270
°C
°C
STG
T
OPR
T
°C
J
T
Lead Solder Temperature
°C
SOL
Total Device Power Dissipation @ T = 25°C
mW
mW/°C
A
P
D
Derate Above 25°C
2.94
EMITTER
I
DC/Average Forward Input Current
Reverse Input Voltage
60
3
mA
V
F
V
R
LED Power Dissipation @ T = 25°C
120
1.41
mW
A
P
D
Derate Above 25°C
mW/°C
DETECTOR
I
Continuous Collector Current
150
mA
C
Collector-Emitter Voltage
MOC8021M
50
80
V
V
V
CEO
MOC8050M
Detector Power Dissipation @ T = 25°C
150
1.76
mW
mW/°C
A
P
D
Derate Above 25°C
©2000 Fairchild Semiconductor Corporation
MOC8021M, MOC8050M Rev. 3.2
www.fairchildsemi.com
3
Electrical Characteristics
T = 25°C Unless otherwise specified.
A
Individual Component Characteristics
Symbol
EMITTER
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Collector-Emitter Breakdown Voltage
I = 10 mA
1.18
2.00
10
V
F
F
I
V = 3.0 V
0.001
µA
R
R
MOC8021M
MOC8050M
50
80
5
100
100
10
V
V
BV
I = 1.0 mA, I = 0
C F
CEO
BV
Emitter-Collector Breakdown Voltage I = 100 µA, I = 0
V
ECO
E
F
I
Collector-Emitter Dark Current
Capacitance
V
= 60 V, I = 0
1
µA
pF
CEO
CE
CE
F
C
V
= 0 V, f = 1 MHz
8
CE
Transfer Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
DC CHARACTERISTICS
Current Transfer Ratio,
Collector to Emitter
CTR
MOC8021M
I = 10 mA, V = 5 V
1,000
500
%
%
F
CE
MOC8050M
I = 10 mA, V = 1.5 V
F CE
AC CHARACTERISTICS
I = 5 mA, V = 10 V,
F
CC
t
Turn-on Time
Turn-off Time
8.5
95
µs
µs
on
off
R = 100 Ω
L
I = 5 mA, V = 10 V,
F
CC
t
R = 100 Ω
L
Isolation Characteristics
Symbol Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
V
C
R
Input-Output Isolation Voltage t = 1 Minute
4170
VAC
RMS
ISO
ISO
ISO
Isolation Capacitance
Isolation Resistance
V
V
= 0 V, f = 1 MHz
0.2
pF
I-O
I-O
11
= 500 VDC, T = 25°C
10
Ω
A
©2000 Fairchild Semiconductor Corporation
MOC8021M, MOC8050M Rev. 3.2
www.fairchildsemi.com
4
Typical Performance Curves
1.8
1.6
1.4
V
T
= 10 V
Normalized to I = 10 mA
F
CE
= 25oC
A
= 0oC, 25oC
T
= -40oC
T
A
A
1
T
= -40oC
A
1.2
1.0
0.8
0.6
T
= 7 oC
0
A
T
T
= 25oC
T
= 110oC
A
A
A
= 110oC
0.1
0.1
1
10
100
0.1
1
10
100
I
- LED FORWARD CURRENT (mA)
I
- FORWARD CURRENT (mA)
F
F
Figure 4. Normalized CTR vs. Forward Current
Figure 3. LED Forward Voltage vs. Forward Current
1000
100
10
V
T
= 10 V
CC
= 25oC
1.6
R
= 1kΩ
L
Normalized to T = 25oC
I
= 10 mA
= 10 V
A
F
A
V
CE
1.4
1.2
1.0
0.8
0.6
0.4
R
= 100 Ω
= 10 Ω
L
R
L
1
0.1
0.1
-40
-20
0
A
20
40
60
80
100
120
1
10
100
T
- AMBIENT TEMPERATURE (°C)
I
F
- FORWARD CURRENT (mA)
Figure 5. Normalized CTR vs. Ambient Temperature
Figure 6. Turn-on Time vs. Forward Current
16
V
T
= 10V
Normalized to:
= 1 mA, V = 5V
T
= 25oC
CC
A
= 25oC
I
F
CE
A
14
12
10
8
1000
100
I
= 10 mA
= 5 mA
F
R
= 1KΩ
L
I
F
R
= 100Ω
= 10Ω
L
6
R
L
10
1
4
I
I
= 2 mA
F
2
= 1 mA
5
F
0
0
1
10
100
0
1
2
3
4
6
7
8
9
10
I
- FORWARD CURRENT (mA)
V
- COLLECTOR-EMITTER VOLTAGE (V)
F
CE
Figure 7. Turn-off Time vs. Forward Current
Figure 8. Normalized Collector-Emitter Current
vs. Collector-Emitter Voltage
©2000 Fairchild Semiconductor Corporation
MOC8021M, MOC8050M Rev. 3.2
www.fairchildsemi.com
5
Typical Performance Curves (Continued)
100,000
V
= 10 V
CE
10,000
1.000
100
10
1
0.1
0.01
-40
-20
0
20
60
80
100
120
40
T
A
- AMBIENT TEMPERATURE (°C)
Figure 9. Dark Current vs. Ambient Temperature
Switching Time Test Circuit and Waveform
TEST CIRCUIT
WAVE FORMS
VCC = 10 V
INPUT PULSE
IC
IF
RL
10%
INPUT
OUTPUT
OUTPUT PULSE
90%
RBE
tr
tf
toff
ton
IF to produce IC = 2 mA
Adjust
Figure 10. Switching Time Test Circuit and Waveform
©2000 Fairchild Semiconductor Corporation
MOC8021M, MOC8050M Rev. 3.2
www.fairchildsemi.com
6
Reflow Profile
Figure 11. Reflow Profile
©2000 Fairchild Semiconductor Corporation
MOC8021M, MOC8050M Rev. 3.2
www.fairchildsemi.com
7
Ordering Information
Part Number
Package
Packing Method
MOC8021M
DIP 6-Pin
Tube (50 Units)
MOC8021SM
MOC8021SR2M
MOC8021VM
MOC8021SVM
SMT 6-Pin (Lead Bend)
SMT 6-Pin (Lead Bend)
Tube (50 Units)
Tape and Reel (1000 Units)
Tube (50 Units)
DIP 6-Pin, DIN EN/IEC60747-5-5 Option
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tube (50 Units)
MOC8021SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tape and Reel (1000 Units)
Tube (50 Units)
MOC8021TVM
DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option
Note:
2. The product orderable part number system listed in this table also applies to the MOC8050M device.
Marking Information
1
2
MOC8021
6
V X YY Q
5
3
4
Figure 12. Top Mark
Table 1. Top Mark Definitions
1
2
3
4
5
6
Fairchild Logo
Device Number
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
One-Digit Year Code, e.g., “5”
Digit Work Week, Ranging from “01” to “53”
Assembly Package Code
©2000 Fairchild Semiconductor Corporation
MOC8021M, MOC8050M Rev. 3.2
www.fairchildsemi.com
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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