MOCD217VM_技术文档

MOCD207M, MOCD208M,

MOCD211M, MOCD213M,

MOCD217M

8-pin SOIC Dual-Channel

Phototransistor Output

Optocoupler

www.onsemi.com

These devices consist of two gallium arsenide infrared emitting

diodes optically coupled to two monolithic silicon phototransistor

detectors, in a surface mountable, small outline, plastic package. They

are ideally suited for high−density applications, and eliminate the need

for through−the−board mounting.

Features

• Closely Matched Current Transfer Ratios

• Minimum BV

of 70 V Guaranteed

SOIC8

M SUFFIX

CASE 751DZ

CEO

– MOCD207M, MOCD208M, MOCD213M

• Minimum BV

of 30 V Guaranteed

– MOCD211M, MOCD217M

CEO

• Low LED Input Current Required for Easier Logic Interfacing

– MOCD217M

MARKING DIAGRAM

1

• Convenient Plastic SOIC−8 Surface Mountable Package Style, with

0.050″ Lead Spacing

• Safety and Regulatory Approvals:

2

D207

X YY S

– UL1577, 2,500 VAC

for 1 Minute

RMS

– DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage

• These are Pb−Free Devices

6

V

Applications

• Feedback Control Circuits

• Interfacing and Coupling Systems of Different Potentials and

Impedances

5

3

4

• General Purpose Switching Circuits

• Monitor and Detection Circuits

1 − Logo

2 − Device Number

3 − DIN EN/IEC60747−5−5 Option (only appears

on component ordered with this option)

4 − One−Digit Year Code, e.g., “4”

5 − Digit Work Week, Ranging from “01” to “53”

6 − Assembly Package Code

1

8

COLLECTOR 1

ANODE 1

CATHODE 1 2

ANODE 2 3

7 EMITTER 1

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

6

5

COLLECTOR 2

EMITTER 2

CATHODE 2

4

Figure 1. Schematic

1

Publication Order Number:

October, 2018 − Rev. 6

MOCD217M/D

MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M

Safety and Insulation Ratings

As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.

Compliance with the safety ratings shall be ensured by means of protective circuits.

Parameter

Characteristics

Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated

Mains Voltage

< 150 V

< 300 V

I−IV

I−III

RMS

Climatic Classification

55/100/21

2

Pollution Degree (DIN VDE 0110/1.89)

Comparative Tracking Index

175

Symbol

Parameter

Input−to−Output Test Voltage, Method A, V

Value

Unit

V

PR

x 1.6 = V

,

904

V

peak

IORM

PR

Type and Sample Test with t = 10 s, Partial Discharge < 5 pC

m

Input−to−Output Test Voltage, Method B, V

x 1.875 = V

,

1060

V

peak

IORM

PR

100% Production Test with t = 1 s, Partial Discharge < 5 pC

m

V

Maximum Working Insulation Voltage

Highest Allowable Over−Voltage

External Creepage

565

4000

≥4

V

IORM

peak

V

IOTM

peak

mm

°C

External Clearance

≥4

DTI

Distance Through Insulation (Insulation Thickness)

Case Temperature (Note 1)

Input Current (Note 1)

≥0.4

150

200

300

T

S

I

mA

mW

W

S,INPUT

P

Output Current (Note 1)

S,OUTPUT

9

R

Insulation Resistance at T , V = 500 V (Note 1)

>10

IO

S

IO

1. Safety limit values – maximum values allowed in the event of a failure.

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2

MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

A

Symbol

Rating

Value

Unit

TOTAL DEVICE

T

Storage Temperature

−40 to +125

−40 to +100

−40 to +125

260 for 10 seconds

240

°C

STG

T

Ambient Operating Temperature

Junction Temperature

A

T

J

°C

T

Lead Solder Temperature

°C

SOL

P

Total Device Power Dissipation @ T = 25°C

mW

mW/°C

D

A

Derate Above 25°C

2.94

EMITTER

I

Continuous Forward Current

Forward Current – Peak (PW = 100 ms, 120 pps)

Reverse Voltage

60

1.0

6.0

90

mA

A

F

I (pk)

F

V

P

V

R

D

LED Power Dissipation @ T = 25°C

mW

mW/°C

A

Derate Above 25°C

0.8

DETECTOR

I

Continuous Collector Current

150

70

mA

V

C

V

Collector−Emitter Voltage

− MOCD207M, MOCD208M, MOCD213M

CEO

− MOCD211M, MOCD217M

Emitter−Collector Voltage

30

7

V

ECO

P

D

Detector Power Dissipation @ T = 25°C

150

1.76

mW

mW/°C

A

Derate Above 25°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

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3

MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

Symbol

Parameter

Device

Test Conditions

Min

Typ

Max

Unit

EMITTER

V

F

Input Forward Voltage

MOCD217M

MOCD213M

I = 1 mA

−

1.05

1.15

1.25

1.3

1.5

V

F

I = 10 mA

F

MOCD207M,

MOCD208M,

MOCD211M

I = 30 mA

F

I

Reverse Leakage Current

Input Capacitance

All

V

R

= 6 V

−

0.001

18

100

mA

R

C

−

pF

IN

DETECTOR

I

Collector−Emitter Dark Current

All

V

I

= 10 V, T = 25°C

−

1.0

100

50

−

nA

mA

V

CEO

CE

A

= 10 V, T = 100°C

CE

A

BV

Collector−Emitter Breakdown

Voltage

MOCD211M,

MOCD217M

30

−

= 100 mA

CEO

C

MOCD207M,

MOCD208M,

MOCD213M

I

= 100 mA

70

100

−

V

C

E

BV

C

Emitter−Collector Breakdown

All

I

= 100 mA

7

10

7

−

V

ECO

Voltage

Collector−Emitter Capacitance

Collector−Output Current

All

f = 1.0 MHz, V = 0

−

pF

CE

COUPLED

CTR

MOCD207M

MOCD208M

MOCD211M

MOCD213M

MOCD217M

I = 10 mA, V = 5 V

100

40

−

200

125

−

%

V

F

CE

I = 10 mA, V = 5 V

F

CE

I = 10 mA, V = 5 V

20

F

CE

I = 10 mA, V = 5 V

100

−

F

CE

I = 1 mA, V = 5 V

−

F

CE

V

Collector−Emitter Saturation

Voltage

MOCD207M,

MOCD208M,

MOCD211M,

MOCD213M

I

C

= 2 mA, I = 10 mA

0.4

CE(SAT)

F

MOCD217M

All

I

= 100 mA, I = 1 mA

−

0.4

V

C

F

t

Turn−On Time

Turn−Off Time

Rise Time

= 2 mA, V = 10 V,

7.5

−

ms

on

C

CC

R = 100 W (Figure 7)

L

All

I

= 2 mA, V = 10 V,

−

5.7

3.2

4.7

−

ms

off

C

CC

R = 100 W (Figure 7)

L

t

r

I = 2 mA, V = 10 V,

C CC

R = 100 W (Figure 7)

L

t

f

Fall Time

I = 2 mA, V = 10 V,

C CC

R = 100 W (Figure 7)

L

ISOLATION

V

ISO

C

ISO

R

ISO

Input−Output Isolation Voltage

Isolation Capacitance

All

t = 1 Minute

2500

−

0.2

−

VAC

RMS

V

I−O

V

I−O

= 0 V, f = 1 MHz

−

pF

11

Isolation Resistance

=

500 VDC, T = 25°C

10

W

A

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

www.onsemi.com

4

MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M

TYPICAL CHARACTERISTICS

10

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

V

= 5 V

CE

NORMALIZED TO I_F= 10 mA

1

T

= –55_C

A

= 25_C

A

0.1

T

= 100_C

A

1

10

100

I_F– LED FORWARD CURRENT (mA)

0.01

0.1

1

10

100

Figure 2. LED Forward Voltage vs. Forward

Current

I_F– LED INPUT CURRENT (mA)

10

Figure 3. Output Current vs. Input Current

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1

I

_F= 10 mA

NORMALIZED TO T_A= 25_C

NORMALIZED TO V_CE= 5 V

0.1

−80

−60

−40

−20

0

20

40

60

80

100

120

0

1

2

3

4

5

6

7

8

9

10

V_CE– COLLECTOR−EMITTER VOLTAGE (V)

T_A– AMBIENT TEMPERATURE (_C)

Figure 4. Output Current vs. Ambient

Temperature

Figure 5. Output Current vs. Collector−Emitter

Voltage

10000

V

_CE= 10 V

1000

100

10

1

0.1

0

20

40

60

80

100

T_A– AMBIENT TEMPERATURE (_C)

Figure 6. Dark Current vs. Ambient

Temperature

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5

MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M

SWITCHING TIME TEST CIRCUIT AND WAVEFORMS

V_CC= 10 V

INPUT PULSE

I_C

I_F

R_L

10%

90%

INPUT

OUTPUT

OUTPUT PULSE

R_BE

t_r

t_f

t_off

t_on

I_{F to produce}I_{C = 2 mA}

Adjust

Figure 7. Switching Time Test Circuit and Waveforms

REFLOW PROFILE

Max. Ramp−up Rate = 3°C/S

Max. Ramp−down Rate = 6°C/S

T

P

260

240

220

200

180

160

140

120

100

80

t

P

T

L

Tsmax

t

L

Preheat Area

Tsmin

t

s

60

40

20

0

120

Time 25°C to Peak

240

360

Time (seconds)

Figure 8. Reflow Profile

Profile Feature

Pb−Free Assembly Profile

150°C

Temperature Minimum (Tsmin)

Temperature Maximum (Tsmax)

200°C

Time (t ) from (Tsmin to Tsmax)

60 − 120 seconds

3°C/second maximum

217°C

S

Ramp−up Rate (t to t )

L

P

Liquidous Temperature (T )

L

Time (t ) Maintained Above (T )

60 − 150 seconds

260°C +0°C / –5°C

30 seconds

L

Peak Body Package Temperature

Time (t ) within 5°C of 260°C

P

Ramp−down Rate (T to T )

6°C/second maximum

8 minutes maximum

P

L

Time 25°C to Peak Temperature

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6

MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M

ORDERING INFORMATION

Part Number

MOCD207M

Package

Shipping

Small Outline 8−Pin

100 Units / Tube

MOCD207R2M

MOCD207VM

MOCD207R2VM

MOCD208M

2500 Units / Tape & Reel

100 Units / Tube

Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option

Small Outline 8−Pin

2500 Units / Tape & Reel

100 Units / Tube

MOCD208R2M

MOCD208VM

MOCD208R2VM

MOCD211M

Small Outline 8−Pin

2500 Units / Tape & Reel

100 Units / Tube

Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option

Small Outline 8−Pin

2500 Units / Tape & Reel

100 Units / Tube

MOCD211R2M

MOCD211VM

MOCD211R2VM

MOCD213M

Small Outline 8−Pin

2500 Units / Tape & Reel

100 Units / Tube

Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option

Small Outline 8−Pin

2500 Units / Tape & Reel

100 Units / Tube

MOCD213R2M

MOCD213VM

MOCD213R2VM

MOCD217M

Small Outline 8−Pin

2500 Units / Tape & Reel

100 Units / Tube

Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option

Small Outline 8−Pin

2500 Units / Tape & Reel

100 Units / Tube

MOCD217R2M

MOCD217VM

MOCD217R2VM

Small Outline 8−Pin

2500 Units / Tape & Reel

100 Units / Tube

Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option

2500 Units / Tape & Reel

www.onsemi.com

7

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOIC8

CASE 751DZ

ISSUE O

DATE 30 SEP 2016

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13733G

SOIC8

PAGE 1 OF 1

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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

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


型号：	MOCD217VM
厂家：	ONSEMI
描述：	8 引脚 SOIC 双沟道光电晶体管输出光耦合器输出元件晶体管光电晶体管
文件：	总9页 (文件大小：232K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MOCD217VM [ONSEMI]

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