MPS2369AG [ONSEMI]

Switching Transistors;
MPS2369AG
型号: MPS2369AG
厂家: ONSEMI    ONSEMI
描述:

Switching Transistors

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ON Semiconductort  
MPS2369  
MPS2369A  
Switching Transistors  
NPN Silicon  
*
*ON Semiconductor Preferred Device  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Value  
15  
Unit  
Vdc  
V
CEO  
V
40  
Vdc  
CES  
CBO  
EBO  
V
V
40  
Vdc  
4.5  
200  
Vdc  
1
2
3
Collector Current — Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
CASE 29–11, STYLE 1  
TO–92 (TO–226AA)  
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
COLLECTOR  
3
Thermal Resistance, Junction to Ambient  
R
200  
°C/W  
qJA  
2
BASE  
1
EMITTER  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
Collector–Emitter Breakdown Voltage  
V
15  
40  
40  
4.5  
Vdc  
Vdc  
(BR)CEO  
(I = 10 mAdc, I = 0)  
MPS2369A  
MPS2369,A  
MPS2369,A  
MPS2369,A  
C
B
Collector–Emitter Breakdown Voltage  
(I = 10 µAdc, V = 0)  
V
(BR)CES  
(BR)CBO  
(BR)EBO  
C
BE  
Collector–Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
V
V
Vdc  
C
E
Emitter–Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
Vdc  
E
C
Collector Cutoff Current  
I
µAdc  
CBO  
(V  
CB  
(V  
CB  
= 20 Vdc, I = 0)  
0.4  
30  
E
= 20 Vdc, I = 0, T = 125°C)  
MPS2369,A  
MPS2369,A  
E
A
Collector Cutoff Current  
(V = 20 Vdc, V = 0)  
I
0.4  
µAdc  
CES  
CE  
BE  
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
June, 2001 – Rev. 2  
MPS2369/D  
MPS2369 MPS2369A  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
ON CHARACTERISTICS  
(1)  
DC Current Gain  
(I = 10 mAdc, V  
h
FE  
= 1.0 Vdc)  
= 1.0 Vdc, T = –55°C)  
= 1.0 Vdc)  
= 0.35 Vdc)  
= 0.35 Vdc, T = –55°C)  
= 0.4 Vdc)  
MPS2369A  
MPS2369  
MPS2369  
MPS2369A  
MPS2369A  
MPS2369A  
MPS2369  
MPS2369A  
20  
40  
40  
20  
30  
20  
20  
120  
120  
C
CE  
CE  
CE  
CE  
CE  
CE  
(I = 10 mAdc, V  
(I = 10 mAdc, V  
(I = 10 mAdc, V  
(I = 10 mAdc, V  
(I = 30 mAdc, V  
(I = 100 mAdc, V  
C
C
C
C
C
C
C
A
A
= 2.0 Vdc)  
= 1.0 Vdc)  
CE  
CE  
(I = 100 mAdc, V  
(1)  
Collector–Emitter Saturation Voltage  
V
V
Vdc  
Vdc  
CE(sat)  
(I = 10 mAdc, I = 1.0 mAdc)  
MPS2369  
0.25  
0.20  
0.30  
0.25  
0.50  
C
C
B
B
B
B
(I = 10 mAdc, I = 1.0 mAdc)  
MPS2369A  
MPS2369A  
MPS2369A  
MPS2369A  
(I = 10 mAdc, I = 1.0 mAdc, T = +125°C)  
C
A
(I = 30 mAdc, I = 3.0 mAdc)  
C
(I = 100 mAdc, I = 10 mAdc)  
C
B
(1)  
Base–Emitter Saturation Voltage  
BE(sat)  
(I = 10 mAdc, I = 1.0 mAdc)  
MPS2369  
0.7  
0.5  
0.85  
1.02  
1.15  
1.60  
C
B
(I = 10 mAdc, I = 1.0 mAdc, T = +125°C)  
MPS2369A  
MPS2369A  
MPS2369A  
MPS2369A  
C
C
B
B
B
B
A
A
(I = 10 mAdc, I = 1.0 mAdc, T = –55°C)  
(I = 30 mAdc, I = 3.0 mAdc)  
C
(I = 100 mAdc, I = 10 mAdc)  
C
SMALL–SIGNAL CHARACTERISTICS  
Output Capacitance  
C
4.0  
pF  
obo  
(V  
CB  
= 5.0 Vdc, I = 0, f = 1.0 MHz)  
MPS2369,A  
MPS2369,A  
E
Small–Signal Current Gain  
(I = 10 mAdc, V = 10 Vdc, f = 100 MHz)  
h
5.0  
fe  
C
CE  
SWITCHING CHARACTERISTICS  
Storage Time  
(I = I = I = 10 mAdc) (Figure 3)  
B1 B2  
t
5.0  
8.0  
13  
12  
ns  
ns  
s
MPS2369,A  
MPS2369,A  
MPS2369,A  
C
Turn–On Time  
t
t
on  
(V  
= 3.0 Vdc, I = 10 mAdc, I = 3.0 mAdc)  
CC  
C
B1  
(Figure 1)  
Turn–Off Time  
10  
18  
ns  
off  
(V  
= 3.0 Vdc, I = 10 mAdc, I = 3.0 mAdc,  
= 1.5 mAdc) (Figure 2)  
CC  
C
B1  
I
B2  
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.  
http://onsemi.com  
2
MPS2369 MPS2369A  
t
1
3.0 V  
270  
+10.6 V  
0
-1.5 V  
3.3 k  
C * < 4.0 pF  
S
< 1.0 ns  
PULSE WIDTH (t ) = 300 ns  
1
DUTY CYCLE = 2.0%  
Figure 1. t  
Circuit  
on  
t
1
3.0 V  
+10.75 V  
270  
0
-4.15 V  
< 1.0 ns  
3.3 k  
C * < 4.0 pF  
S
PULSE WIDTH (t ) = 300 ns  
1
DUTY CYCLE = 2.0%  
Figure 2. t  
Circuit  
off  
t
1
10 V  
+6.0 V  
0
980  
-4.0 V  
500  
C * < 3.0 pF  
S
< 1.0 ns  
PULSE WIDTH (t ) = 300 ns  
1
DUTY CYCLE = 2.0%  
Figure 3. Storage Test Circuit  
*Total shunt capacitance of test jig and connectors.  
http://onsemi.com  
3
MPS2369 MPS2369A  
PACKAGE DIMENSIONS  
TO–92 (TO–226)  
CASE 29–11  
ISSUE AL  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A
B
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
R
P
L
INCHES  
DIM MIN MAX  
MILLIMETERS  
SEATING  
PLANE  
K
MIN  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
---  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
---  
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
---  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
---  
D
X X  
G
J
H
V
K
L
---  
---  
C
N
P
R
V
0.105  
0.100  
---  
2.66  
2.54  
---  
SECTION X–X  
0.115  
0.135  
2.93  
3.43  
1
N
---  
---  
N
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
Literature Fulfillment:  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
Email: ONlit@hibbertco.com  
Email: r14525@onsemi.com  
ON Semiconductor Website: http://onsemi.com  
For additional information, please contact your local  
Sales Representative.  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
MPS2369/D  

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