MPS3646G [ONSEMI]
Switching Transistor;
| 型号： | MPS3646G |
| 厂家： | 
ONSEMI |
| 描述： | Switching Transistor 开关 晶体管 |
| 文件： | 总8页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
ON Semiconductort
Switching Transistor
NPN Silicon
MPS3646
ON Semiconductor Preferred Device
w This device is available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
15
Unit
Vdc
V
CEO
1
V
40
Vdc
CES
CBO
EBO
2
3
V
V
40
Vdc
5.0
Vdc
CASE 29−11, STYLE 1
TO−92 (TO−226AA)
Collector Current — Continuous
I
C
300
500
mAdc
— 10 ms Pulse
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
P
625
5.0
mW
mW/°C
A
D
COLLECTOR
3
Total Device Dissipation @ T = 25°C
1.5
12
Watts
mW/°C
C
D
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
2
J
stg
BASE
THERMAL CHARACTERISTICS
Characteristic
1
Symbol
Max
200
Unit
°C/W
°C/W
EMITTER
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
q
JA
R
83.3
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I = 100 mAdc, V = 0)
V
40
15
40
5.0
—
—
—
—
Vdc
Vdc
Vdc
Vdc
mAdc
C
BE
(BR)CES
V
CEO(sus)
(1)
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
(I = 10 mAdc, I = 0)
C
B
(I = 100 mAdc, I = 0)
V
V
C
E
(BR)CBO
(BR)EBO
(I = 100 mAdc, I = 0)
E
C
I
CES
(V = 20 Vdc, V = 0)
—
—
0.5
3.0
CE
BE
(V = 20 Vdc, V = 0, T = 65°C)
CE
BE
A
ON CHARACTERISTICS(1)
DC Current Gain
(I = 30 mAdc, V = 0.4 Vdc)
h
FE
30
25
15
120
—
—
—
C
CE
(I = 100 mAdc, V = 0.5 Vdc)
C
CE
(I = 300 mA, V = 1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
(I = 30 mAdc, I = 3.0 mAdc)
V
V
—
—
—
—
0.2
0.28
0.5
Vdc
C
B
CE(sat)
(I = 100 mAdc, I = 10 mAdc)
C
B
(I = 300 mAdc, I = 30 mAdc)
C
B
(I = 30 mA, I = 3.0 mA, T = 65°C)
0.3
C
B
A
(I = 30 mAdc, I = 3.0 mAdc)
0.73
—
0.95
1.2
Vdc
C
B
BE(sat)
(I = 100 mAdc, I = 10 mAdc)
C
B
(I = 300 mAdc, I = 30 mA)
—
1.7
C
B
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006 − Rev. 3
MPS3646/D
MPS3646
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
Symbol
Min
Max
Unit
f
T
350
—
—
MHz
pF
(I = 30 mAdc, V = 10 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
5.0
9.0
obo
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
—
pF
ibo
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
EB
C
SWITCHING CHARACTERISTICS
Turn−On Time
t
—
—
—
—
—
—
18
10
15
28
15
18
ns
ns
ns
ns
ns
ns
on
(V = 10 Vdc, I = 300 mAdc, I = 30 mAdc)
(Figure 1)
CC
C
B1
Delay Time
Rise Time
t
d
t
r
Turn−Off Time
Fall Time
t
off
(V = 10 Vdc, I = 300 mAdc, I = I = 30 mAdc)
CC
C
B1
B2
(Figure 1)
t
f
Storage Time
t
s
(V = 10 Vdc, I = 10 mAdc, I = I = 10 mAdc) (Figure 2)
CC
C
B1
B2
−3.0 V
+10 V
33
1.0 k
120
+7.6 V
0
To Sampling Scope
t < 1.0 ns
r
0.1
V
in
Z
in
= 100 kΩ
t , t < 1.0 ns
r
f
50
Pulse Width ≥ 240 ns
= 50 Ω
Z
in
Figure 1. Switching Time Test Circuit
10% Pulse
Waveform
at Point “A”
+10 V
+6.0 V
91
0
0.1
+11 V
−4 V
10%
t
890
V
out
500
500
To Sampling Scope
s
t ≤ 1.0 ns
0
r
“A”
V
in
Z
in
= 100 kΩ
−10 V
56
t < 1.0 ns
r
Pulse Width = 300 ns
Duty Cycle = 2.0%
Z
in
= 50 Ω
Figure 2. Charge Storage Time Test Circuit
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2
MPS3646
CURRENT GAIN CHARACTERISTICS
100
MPS3646
= 1 V
V
CE
70
50
T = 125°C
J
25°C
−15°C
−55°C
30
20
10
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
I , COLLECTOR CURRENT (mA)
C
Figure 3. Minimum Current Gain
“ON” CONDITION CHARACTERISTICS
1.0
0.8
0.6
0.4
0.2
MPS3646
T = 25°C
J
I
C
= 10 mA
50 mA
200 mA
100 mA
0
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
Figure 4. Collector Saturation Region
1.2
1.0
1.0
I /I = 10
C B
T = 25°C
J
(25°C to 125°C)
(−ꢀ55°C to 25°C)
MAX V
BE(sat)
0.5
q
for V
CE(sat)
VC
MIN V
0.8
BE(sat)
0
−ꢀ0.5
−ꢀ1.0
−ꢀ1.5
0.6
0.4
0.2
0
(25°C to 125°C)
(−ꢀ55°C to 25°C)
MAX V
CE(sat)
q
for V
BE
VB
−ꢀ2.0
1.0
2.0 3.0 5.0 7.0 10
20 30
50 70 100
200
0
40
80
120
160
200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Saturation Voltage Limits
Figure 6. Temperature Coefficients
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3
MPS3646
DYNAMIC CHARACTERISTICS
200
200
I /I = 10
C B
V
= 10 V
CC
T = 25°C
T = 25°C
J
J
100
70
100
70
T = 125°C
J
V
CC
= 10 V
t @ V
d
= 3 V
EB(off)
50
50
30
20
30
20
2 V
V
CC
= 3 V
0 V
10
10
7.0
5.0
7.0
5.0
1.0
1.0
0.1
2.0
5.0
10
20
50
100
200
200
10
1.0
1.0
1.0
2.0
5.0
10
20
50
100
200
200
200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. Delay Time
Figure 8. Rise Time
50
200
V
= 10 V
CC
T = 25°C
T = 125°C
T = 25°C
T = 125°C
J
J
J
100
70
I /I = 20
C B
30
20
J
I /I = 10
C B
50
30
20
I /I = 20
C B
10
I /I = 10
C B
10
t ′ ^ t − 1/8 t
s
s
= I
f
7.0
I
B1 B2
7.0
5.0
5.0
2.0
5.0
10
20
50
100
2.0
5.0
10
20
50
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 9. Storage Time
Figure 10. Fall Time
10
7.0
5.0
1000
MAX
TYP
I /I = 10
C B
700
500
T = 25°C
T = 125°C
J
C
ibo
J
300
200
Q
T
100
V
= 3 V
CC
70
50
C
obo
3.0
2.0
V
CC
= 10 V
= 3 V
Q
A
30
20
V
CC
0.2
0.5
1.0
2.0
5.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
REVERSE BIAS (Vdc)
I , COLLECTOR CURRENT (mA)
C
Figure 11. Junction Capacitance
Figure 12. Maximum Charge Data
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4
MPS3646
PACKAGE DIMENSIONS
CASE 029−11
(TO−226AA)
ISSUE AD
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
K
R
SEATING
PLANE
P
L
F
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.44
7.37
3.18
0.457
0.407
1.15
2.42
0.46
12.70
6.35
2.04
−−−
MAX
5.21
7.87
4.19
0.533
0.482
1.39
2.66
0.61
−−−
A
B
C
D
F
0.175
0.290
0.125
0.018
0.016
0.045
0.095
0.018
0.500
0.250
0.080
−−−
0.205
0.310
0.165
0.021
0.019
0.055
0.105
0.024
−−−
X X
D
G
G
H
J
H
R
J
K
L
−−−
−−−
SECTION X−X
N
P
R
0.105
0.100
−−−
2.66
2.54
−−−
C
1
2
3
N
0.135
3.43
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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5
MPS3646
Notes
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6
MPS3646
Notes
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MPS3646/D
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