MPS5172 [ONSEMI]
General Purpose Transistor NPN Silicon; 通用晶体管NPN硅
| 型号： | MPS5172 |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistor NPN Silicon |
| 文件： | 总6页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MPS5172
General Purpose Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
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COLLECTOR
3
MAXIMUM RATINGS
2
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Symbol
Value
25
Unit
Vdc
Vdc
BASE
V
CEO
CBO
V
25
1
Emitter−Base Voltage
V
EBO
5.0
Vdc
EMITTER
Collector Current − Continuous
I
C
100
mAdc
Total Device Dissipation @ T = 25°C
P
D
625
5.0
mW
mW/°C
A
Derate above 25°C
Total Power Dissipation @ T = 60°C
P
P
450
mW
A
D
Total Device Dissipation @ T = 25°C
1.5
12
W
mW/°C
C
D
TO−92 (TO−226)
CASE 29
Derate above 25°C
1
2
3
STYLE 1
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
MARKING DIAGRAM
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
q
JA
JC
R
q
83.3
MPS
5172
AYWW G
G
Maximum ratings are those values beyond which device damage can occur.
Maximumratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
MPS5172 = Device Code
A
= Assembly Location
Y
= Year
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPS5172
MPS5172G
Package
Shipping
5000 / Bulk
5000 / Bulk
TO−92
TO−92
(Pb−Free)
MPS5172RLRM
TO−92
2000/Ammo Pack
2000/Ammo Pack
MPS5172RLRMG
TO−92
*For additional information on our Pb−Free strategy and soldering details, please
downloadthe ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
(Pb−Free)
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
December, 2005 − Rev. 2
MPS5172/D
MPS5172
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 1)
V
25
−
−
Vdc
(BR)CEO
(I = 10 mA, I = 0)
C
B
Collector Cutoff Current
I
100
nAdc
CES
(V = 25 V, I = 0)
CE
B
Collector Cutoff Current
I
CBO
(V = 25 V, I = 0)
−
−
100
10
nAdc
mAdc
CB
E
E
(V = 25 V, I = 0, T = 100°C)
CB
A
Emitter Cutoff Current
I
−
100
nAdc
EBO
(V = 5.0 V, I = 0)
EB
C
ON CHARACTERISTICS (Note 1)
DC Current Gain
h
100
−
500
0.25
1.25
−
FE
(V = 10 V, I = 10 mA)
CE
C
Collector−Emitter Saturation Voltage
V
Vdc
Vdc
CE(sat)
(I = 10 mAdc, I = 1.0 mAdc)
C
B
Base−Emitter On Voltage
V
0.5
BE(on)
(I = 10 mAdc, V = 10 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Collector−Base Capacitance
C
h
1.6
10
pF
−
cb
(V = 10 V, f = 1.0 MHz)
CB
Small−Signal Current Gain
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
100
750
fe
C
CE
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
MPS5172
TYPICAL STATIC CHARACTERISTICS
400
200
T = 125°C
J
25°C
−ꢀ55°C
100
80
60
V
V
= 1.0 V
= 10 V
CE
CE
40
0.004 0.006 0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
3.0
2.0
5.0 7.0 10
20 30
50 70 100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
1.0
0.8
0.6
0.4
0.2
0
100
T = 25°C
PULSE WIDTH = 300 ms
DUTY CYCLE ≤ 2.0%
A
T = 25°C
J
I
= 500 mA
B
80
60
400 mA
300 mA
I
= 1.0 mA
10 mA
50 mA
100 mA
C
200 mA
100 mA
40
20
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
5.0 10 20
0
5.0
10
15
20
25
30
35
40
I , BASE CURRENT (mA)
B
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. Collector Saturation Region
Figure 3. Collector Characteristics
1.4
1.2
1.6
0.8
0
*APPLIES for I /I ≤ h /2
C B
FE
T = 25°C
J
25°C to 125°C
−55°C to 25°C
1.0
0.8
0.6
0.4
*q for V
VC
CE(sat)
V
@ I /I = 10
C B
BE(sat)
−ꢀ0.8
−ꢀ1.6
−ꢀ2.4
V
BE(on)
@ V = 1.0 V
CE
25°C to 125°C
−55°C to 25°C
0.2
0
q
for V
BE
VB
V
@ I /I = 10
C B
CE(sat)
50 100
50 100
0.1 0.2
0.5 1.0
2.0
5.0
10
20
0.1
0.2
0.5
1.0 2.0
5.0 10 20
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 4. “On” Voltages
Figure 5. Temperature Coefficients
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3
MPS5172
TYPICAL DYNAMIC CHARACTERISTICS
500
10
7.0
5.0
T = 25°C
J
T = 25°C
f = 100 MHz
J
f = 1.0 MHz
300
200
C
ib
V
CE
= 20 V
5.0 V
C
ob
3.0
2.0
100
70
50
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
0.05 0.1
0.2
0.5 1.0 2.0
5.0
10
20
50
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Current−Gain − Bandwidth Product
Figure 7. Capacitance
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4
MPS5172
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
FIGURE 9
DUTY CYCLE, D = t /t
1 2
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
P
(pk)
0.02
0.01
READ TIME AT t (SEE AN−569)
1
0.03
0.02
t
1
Z
T
= r(t) • R
q
q
JA
Z
q
JA(t)
JA(t)
− T = P
J(pk)
A
(pk)
SINGLE PULSE
t
2
0.01
0.01 0.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0
10 20
50
100 200
500 1.0ꢂk 2.0ꢂk 5.0ꢂk 10ꢂk 20ꢂk
100ꢂk
50ꢂk
t, TIME (ms)
Figure 8. Thermal Response
4
3
10
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
V
CC
= 30 Vdc
A train of periodical power pulses can be represented by
the model as shown in Figure 9. Using the model and the de-
vice thermal response the normalized effective transient
thermal resistance of Figure 8 was calculated for various
duty cycles.
10
10
2
I
CEO
1
0
10
To find Z
, multiply the value obtained from Figure
JA(t)
q
I
8 by the steady state value R
Example:
.
JA
CBO
q
10
AND
I
@ V
= 3.0 Vdc
CEX
BE(off)
The MPS3904 is dissipating 2.0 watts peak under the follow-
ing conditions:
−1
10
10
t = 1.0 ms, t = 5.0 ms. (D = 0.2)
−2
1
2
−40 −20
0
+20 +40 +60 +80 +100 +120 +140 +160
Using Figure 8 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
T , JUNCTION TEMPERATURE (°C)
J
The peak rise in junction temperature is therefore
Figure 10.
DT = r(t) x P
x R
= 0.22 x 2.0 x 200 = 88°C.
JA
(pk)
q
For more information, see ON Semiconductor Applica-
tion Note AN569/D, available from the Literature Distribu-
tion Center or on our website at www.onsemi.com.
400
100 ms
1.0 ms
200
100
10 ms
1.0 s
The safe operating area curves indicate I −V limits
C
CE
T
= 25°C
C
of the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
dc
60
40
T = 25°C
A
dc
The data of Figure 11 is based upon T
= 150°C; T or
C
J(pk)
20
10
T = 150°C
J
T is variable depending upon conditions. Pulse curves are
A
valid for duty cycles to 10% provided T
≤ 150°C. T
J(pk)
J(pk)
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
may be calculated from the data in Figure 8. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
6.0
4.0
40
2.0
4.0 6.0 8.0 10
20
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 11.
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5
MPS5172
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
SEATING
PLANE
INCHES
DIM MIN MAX
MILLIMETERS
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
−−−
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
−−−
0.205
0.210
0.165
0.021
0.055
0.105
0.020
−−−
D
X X
G
J
H
V
K
L
−−−
−−−
C
N
P
R
V
0.105
0.100
−−−
2.66
2.54
−−−
SECTION X−X
0.115
0.135
2.93
3.43
1
N
−−−
−−−
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
3. SOURCE
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MPS5172/D
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