MPS6428RLRM [ONSEMI]
200mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN;
| 型号： | MPS6428RLRM |
| 厂家： | 
ONSEMI |
| 描述： | 200mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN 晶体 放大器 晶体管 |
| 文件： | 总4页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MPS6428/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
3
2
BASE
1
1
2
3
EMITTER
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Value
Unit
Vdc
V
CEO
V
CBO
V
EBO
50
60
Vdc
6.0
200
Vdc
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage
V
V
50
60
—
—
—
—
—
Vdc
Vdc
A
(BR)CEO
(I = 1.0 mAdc, I = 0)
C
B
Collector–Base Breakdown Voltage
(I = 0.1 mAdc, I = 0)
(BR)CBO
C
E
Collector Cutoff Current
(V = 30 Vdc)
I
0.025
0.01
0.01
CES
CE
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
A
CBO
CB
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
E
I
A
EBO
EB
C
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
ON CHARACTERISTICS
Symbol
Min
Max
Unit
DC Current Gain
h
FE
—
(V
CE
(V
CE
(V
CE
(V
CE
= 5.0 Vdc, I = 0.01 mAdc)
= 5.0 Vdc, I = 0.1 mAdc)
= 5.0 Vdc, I = 1.0 mAdc)
= 5.0 Vdc, I = 10 mAdc)
250
250
250
250
—
650
—
C
C
C
C
—
Collector–Emitter Saturation Voltage
(I = 10 mAdc, I = 0.5 mAdc)
V
Vdc
Vdc
CE(sat)
—
—
0.2
0.6
C
B
(I = 100 mAdc, I = 5.0 mAdc)
C
B
Base–Emitter On Voltage
(I = 1.0 mAdc, V = 5.0 Vdc)
V
0.56
0.66
BE(on)
C
CE
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
100
—
700
3.0
8.0
30
MHz
pF
T
(I = 1.0 mAdc, V
C
= 5.0 V, f = 100 MHz)
CE
Output Capacitance
C
obo
(V
CB
= 10 Vdc, I = 0, f = 1.0 MHz)
E
Input Capacitance
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
C
—
pF
ibo
EB
Input Impedance
(I = 1.0 mAdc, V
C
h
3.0
2.0
200
5.0
kΩ
ie
re
fe
= 5.0 Vdc, f = 1.0 kHz)
C
CE
Voltage Feedback Ratio
(I = 1.0 mAdc, V
–4
X 10
h
h
20
= 5.0 Vdc, f = 1.0 kHz)
C
CE
Small–Signal Current Gain
800
50
—
(I = 1.0 mAdc, V
C
= 5.0 Vdc, f = 1.0 kHz)
= 5.0 Vdc, f = 1.0 kHz)
CE
Output Admittance
h
oe
mhos
(I = 1.0 mAdc, V
C
CE
NOISE FIGURE/TOTAL NOISE VOLTAGE CHARACTERISTICS
NF
VT
NF
VT
NF
VT
Max (1)
Max (2)
Max (3)
Unit
Noise Figure/Voltage
7.0
18.1
6.0 5700
3.5 4.3
dB
nV
(V
CE
= 5.0 V, I = 0.1 mA, T = 25°C)
C A
1. R = 10 kΩ, BW = 1.0 Hz, f = 100 Hz
S
2. R = 50 kΩ, BW = 15.7 kHz, f = 10 Hz–10 kHz
S
3. R = 500 Ω, BW = 1.0 Hz, f = 10 Hz
S
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 1:
PIN 1. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
2. BASE
3. COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
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