MPS6726G [ONSEMI]
One Watt Amplifier Transistors; 一瓦放大器晶体管
| 型号： | MPS6726G |
| 厂家： | 
ONSEMI |
| 描述： | One Watt Amplifier Transistors |
| 文件： | 总4页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MPS6726
One Watt Amplifier
Transistors
PNP Silicon
http://onsemi.com
Features
• This is a Pb−Free Device*
COLLECTOR
3
MAXIMUM RATINGS
2
BASE
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
−30
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
V
CBO
V
EBO
1
−40
EMITTER
−5.0
−1.0
Collector Current − Continuous
I
C
Total Device Dissipation @ T = 25°C
P
D
1.0
8.0
W
mW/°C
A
Derate above 25°C
Total Device Dissipation @ T = 25°C
P
D
2.5
20
W
mW/°C
C
Derate above 25°C
TO−92 1 WATT
(TO−226)
CASE 29−10
STYLE 1
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
1
2
THERMAL CHARACTERISTICS
Characteristic
3
STRAIGHT LEAD
BULK PACK
Symbol
Max
125
50
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
q
JA
R
q
JC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
MPS
6726
AYWWG
G
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
5000 Units / Bulk
MPS6726G
TO−92
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
August, 2010 − Rev. 4
MPS6726/D
MPS6726
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = −10 mAdc, I = 0)
−30
−
C
B
Collector−Base Breakdown Voltage
(I = −100 mAdc, I = 0)
V
V
−40
−
−
C
E
Emitter−Base Breakdown Voltage
(I = −100 mAdc, I = 0)
−5.0
Vdc
E
C
Collector Cutoff Current
(V = −40 Vdc, I = 0)
I
mAdc
mAdc
CBO
−
−
−0.1
−0.1
CB
E
Emitter Cutoff Current
(V = −5.0 Vdc, I = 0)
I
EBO
EB
C
ON CHARACTERISTICS (Note 1)
DC Current Gain
h
FE
−
(I = −100 mAdc, V = −1.0 Vdc)
60
50
−
250
C
CE
(I = −1000 mAdc, V = −1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = −1000 mAdc, I = −100 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−0.5
−1.2
C
B
Base−Emitter On Voltage
(I = −1000 mAdc, V = −1.0 Vdc)
V
BE(on)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Collector−Base Capacitance
C
h
pF
cb
(V = −10 Vdc, I = 0, f = 1.0 MHz)
−
30
25
CB
E
Small−Signal Current Gain
(I = −50 mAdc, V = −10 Vdc, f = 20 MHz)
−
fe
2.5
C
CE
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
-1.0
-0.8
-0.6
-0.4
200
I
=
I
=
I
=
I
=
C
C
I =
C
-1000 mA
I
=
C
-500 mA
C
-50 mA
C
-10 mA
-250
mA
-100
mA
100
70
V
= -1.0 V
CE
T = 25°C
50
J
-0.2
0
T = 25°C
J
20
-10
-20
-50
-100
-200
-500
-1000
-0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100
I , COLLECTOR CURRENT (mA)
C
I , BASE CURRENT (mA)
B
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
http://onsemi.com
2
MPS6726
-1.0
-0.8
-0.6
-0.4
-0.2
-0.8
T = 25°C
J
-1.2
-1.6
-2.0
V
@ I /I = 10
C B
BE(SAT)
V
@ V = -1.0 V
CE
BE(ON)
qV for V
B
BE
-2.4
-2.8
V
@ I /I = 10
C B
CE(SAT)
0
-1.0 -2.0
-5.0 -10 -20
-50 -100 -200
-500 -1000
-1.0 -2.0
-5.0 -10 -20
-50 -100 -200
-500 -1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. “ON” Voltages
Figure 4. Temperature Coefficient
300
200
160
120
80
T = 25°C
J
V
= -10 V
CE
T = 25°C
100
70
J
f = 20 MHz
C
ibo
40
0
50
C
obo
30
-10
-20
-50
-100
-200
-500
-1000
C
C
-5.0
-1.0
-10
-2.0
-15
-3.0
-20
-4.0
-25
-5.0
obo
ibo
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 5. Current Gain — Bandwidth Product
Figure 6. Capacitance
-1.0 k
-500
1.0 s
1.0 ms
100 ms
T = 25°C
A
T
= 25°C
C
-200
-100
-50
DUTY CYCLE ≤ 10%
MPS6726
MPS6727
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-20
-10
-1.0
-2.0
-5.0 -10 -20 -30 -40
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
CE
Figure 7. Active Region — Safe Operating Area
http://onsemi.com
3
MPS6726
PACKAGE DIMENSIONS
TO−92 (TO−226) 1 WATT
CASE 29−10
ISSUE O
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
STRAIGHT LEAD
BULK PACK
B
R
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN DI
MENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
P
L
F
K
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.44
7.37
3.18
0.46
0.41
1.15
2.42
0.46
12.70
6.35
2.04
---
MAX
5.21
7.87
4.19
0.53
0.48
1.39
2.66
0.61
---
A
B
C
D
F
0.175
0.290
0.125
0.018
0.016
0.045
0.095
0.018
0.500
0.250
0.080
---
0.205
0.310
0.165
0.021
0.019
0.055
0.105
0.024
---
D
X X
G
J
H
V
G
H
J
C
K
L
SECTION X−X
---
---
1
N
N
P
R
V
0.105
0.100
---
2.66
2.54
---
STYLE 1:
PIN 1. EMITTER
2. BASE
N
0.135
0.135
3.43
3.43
---
---
3. COLLECTOR
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
BENT LEAD
TAPE & REEL
AMMO PACK
R
B
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN
DIMENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
P
T
SEATING
PLANE
K
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.44
7.37
3.18
0.46
2.40
0.46
12.70
2.04
---
MAX
5.21
7.87
4.19
0.53
2.80
0.61
---
A
B
C
D
G
J
0.175
0.290
0.125
0.018
0.094
0.018
0.500
0.080
---
0.205
0.310
0.165
0.021
0.102
0.024
---
D
X X
G
J
K
N
P
R
V
V
C
0.105
0.100
---
2.66
2.54
---
SECTION X−X
0.135
0.135
3.43
3.43
1
N
---
---
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MPS6726/D
相关型号：
MPS6726RL1
TRANSISTOR 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN, BIP General Purpose Small Signal
ONSEMI
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