MPS751-D26Z [ONSEMI]

(Legacy Fairchild) PNP 60V 2 Amp Small Signal Bipolar Junction Transistor;


型号：	MPS751-D26Z
厂家：	ONSEMI
描述：	(Legacy Fairchild) PNP 60V 2 Amp Small Signal Bipolar Junction Transistor 小信号双极晶体管
文件：	总4页 (文件大小：177K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Order this document

by MPS650/D

SEMICONDUCTOR TECHNICAL DATA

COLLECTOR

BASE

NPN

PNP

Voltage and current are

negative for PNP transistors

EMITTER

*Motorola Preferred Devices

MAXIMUM RATINGS

MPS650

MPS651

MPS750

MPS751

Rating

Symbol

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

5.0

2.0

Collector Current — Continuous

Total Power Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Total Power Dissipation @ T = 25°C

Derate above 25°C

1.5

Watt

mW/°C

Operating and Storage Junction

Temperature Range

T , T

J stg

–55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

Vdc

(BR)CEO

(I = 10 mAdc, I = 0)

MPS650, MPS750

MPS651, MPS751

—

Collector–Base Breakdown Voltage

(I = 100 µAdc, I = 0 )

Vdc

(BR)CBO

MPS650, MPS750

MPS651, MPS751

—

Emitter–Base Breakdown Voltage

(I = 0, I = 10 µAdc)

5.0

—

Vdc

(BR)EBO

Collector Cutoff Current

µAdc

CBO

= 60 Vdc, I = 0)

MPS650, MPS750

MPS651, MPS751

—

0.1

= 80 Vdc, I = 0)

Emitter Cutoff Current

(V = 4.0 V, I = 0)

—

0.1

µAdc

EBO

1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle = 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

(1)

ON CHARACTERISTICS

DC Current Gain

—

(I = 50 mA, V

= 2.0 V)

—

(I = 500 mA, V

(I = 1.0 A, V

(I = 2.0 A, V

= 2.0 V)

Collector–Emitter Saturation Voltage

(I = 2.0 A, I = 200 mA)

Vdc

CE(sat)

—

0.5

0.3

(I = 1.0 A, I = 100 mA)

Base–Emitter On Voltage (I = 1.0 A, V

= 2.0 V)

—

1.0

1.2

Vdc

BE(on)

BE(sat)

Base–Emitter Saturation Voltage (I = 1.0 A, I = 100 mA)

SMALL–SIGNAL CHARACTERISTICS

(2)

Current–Gain — Bandwidth Product

—

MHz

(I = 50 mAdc, V = 5.0 Vdc, f = 100 MHz)

1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle = 2.0%.

2. f is defined as the frequency at which |h | extrapolates to unity.

NPN

PNP

300

270

250

225

= 125°C

= –2.0 V

= 2.0 V

= 125°C

240

210

200

175

25°C

150

125

100

180

150

120

25°C

–55°C

100

200

500 1.0 A 2.0 A 4.0 A

–10 –20

–50 –10 –200

–500 –1.0 A –2.0 A –4.0 A

I , COLLECTOR CURRENT (mA)

, COLLECTOR CURRENT (mA)

Figure 1. MPS650, MPS651

Typical DC Current Gain

Figure 2. MPS750, MPS751

Typical DC Current Gain

NPN

PNP

2.0

1.8

–2.0

–1.8

–1.6

–1.4

–1.2

1.6

1.4

1.2

1.0

0.8

0.6

@ I /I = 10

–1.0

–0.8

–0.6

–0.4

–0.2

BE(sat) C B

@ I /I = 10

C B

BE(sat)

@ V = 2.0 V

BE(on)

@ V

= 2.0 V

BE(on)

0.4

0.2

@ I /I = 10

C B

CE(sat)

@ I /I = 10

C B

CE(sat)

100

200

500

1.0 A

2.0 A

4.0 A

–50

–10

–20

–50

–1.0 A

I , COLLECTOR CURRENT (mA)

–2.0 A –4.0 A

, COLLECTOR CURRENT (mA)

Figure 3. MPS650, MPS651

On Voltages

Figure 4. MPS750, MPS751

On Voltages

Motorola Small–Signal Transistors, FETs and Diodes Device Data

NPN

PNP

1.0

0.9

0.8

0.7

–1.0

–0.9

–0.8

–0.7

= 25°C

0.6

0.5

0.4

0.3

0.2

0.1

–0.6

–0.5

–0.4

–0.3

–0.2

–0.1

= 10 mA

= 100 mA

= 500 mA

= 2.0 A

= –500 mA

I = –2.0 A

= –10 mA

I = –100 mA

0.05 0.1 0.2

0.5 1.0 2.0

5.0 10 20

50 100 200 500

–0.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500

, BASE CURRENT (mA)

I , BASE CURRENT (mA)

Figure 5. MPS650, MPS651

Collector Saturation Region

Figure 6. MPS750, MPS751

Collector Saturation Region

NPN

PNP

–10

4.0

2.0

1.0

–4.0

–2.0

–1.0

100 µs

1.0 ms

MPS65

1.0 ms

MPS75

0.5

–0.5

MPS65

MPS75

0.2

0.1

–0.2

–0.1

= 25°C

T = 25°C

= 25

°C

T = 25°C

0.05

–0.05

WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

0.02

0.01

–0.02

–0.01

1.0

2.0

5.0 10 20

100

–1.0

–2.0

–5.0 –10 –20

–50

–100

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

V , COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 7. MPS650, MPS651 SOA,

Safe Operating Area

Figure 8. MPS750, MPS751 SOA,

Safe Operating Area

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSION D AND J APPLY BETWEEN L AND K

MINIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIMENSION K MINIMUM.

SEATING

PLANE

INCHES

MIN

MILLIMETERS

DIM

MAX

0.205

0.210

0.165

0.022

0.019

0.055

0.105

0.020

–––

MIN

4.45

4.32

3.18

0.41

1.15

2.42

0.39

12.70

6.35

2.04

–––

MAX

5.20

5.33

4.19

0.55

0.48

1.39

2.66

0.50

–––

0.175

0.170

0.125

0.016

0.045

0.095

0.015

0.500

0.250

0.080

–––

X X

SECTION X–X

–––

0.105

0.100

–––

2.66

2.54

–––

0.115

0.135

2.93

3.43

–––

STYLE 1:

PIN 1. EMITTER

CASE 029–04

(TO–226AA)

ISSUE AD

2. BASE

3. COLLECTOR

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specificallydisclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters which may be provided in Motorola

datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola and

Opportunity/Affirmative Action Employer.

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal

How to reach us:

USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,

3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609

INTERNET: http://Design–NET.com

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MPS650/D

◊

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MPS751-D26Z [ONSEMI]

相关型号：

MPS751APM

MPS751APP

MPS751APPLEADFREE

MPS751D26Z

MPS751D27Z

MPS751D74Z

MPS751D75Z

MPS751G

MPS751G

MPS751J05Z

MPS751J18Z

MPS751LEADFREE