MPS751ZL1G [ONSEMI]
Amplifier Transistors; 放大器晶体管![MPS751ZL1G](http://pdffile.icpdf.com/pdf1/p00108/img/icpdf/MPS750_585352_icpdf.jpg)
型号: | MPS751ZL1G |
厂家: | ![]() |
描述: | Amplifier Transistors |
文件: | 总6页 (文件大小:104K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MPS650, MPS651, NPN
MPS750, MPS751, PNP
MPS651 and MPS751 are Preferred Devices
Amplifier Transistors
Features
• Pb−Free Packages are Available*
http://onsemi.com
MAXIMUM RATINGS
MPS650 MPS651
COLLECTOR
COLLECTOR
MPS750 MPS751
Rating
Symbol
Unit
Vdc
Vdc
Vdc
Adc
3
3
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
V
V
40
60
60
80
CE
CB
EB
2
2
BASE
BASE
5.0
2.0
Collector Current − Continuous
Total Power Dissipation @
I
C
1
1
EMITTER
P
P
EMITTER
D
D
T = 25°C
625
5.0
mW
mW/°C
A
NPN
PNP
Derate above 25°C
Total Power Dissipation @
T
= 25°C
1.5
12
W
mW/°C
C
Derate above 25°C
MARKING
DIAGRAM
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
MPS
xxx
AYWW
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
TO−92
CASE 29−11
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
R
q
JA
200
°C/W
xxx
A
Y
= Specific Device Code
= Assembly Location
= Year
Thermal Resistance,
Junction−to−Case
R
q
JC
83.3
°C/W
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
May, 2005 − Rev. 2
MPS650/D
MPS650, MPS651, NPN MPS750, MPS751, PNP
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 10 mAdc, I = 0)
MPS650, MPS750
MPS651, MPS751
40
60
−
−
C
B
Collector−Base Breakdown Voltage
(I = 100 mAdc, I = 0 )
V
V
Vdc
MPS650, MPS750
MPS651, MPS751
60
80
−
−
C
E
Emitter−Base Breakdown Voltage
(I = 0, I = 10 mAdc)
5.0
−
Vdc
C
E
Collector Cutoff Current
(V = 60 Vdc, I = 0)
I
mAdc
CBO
MPS650, MPS750
MPS651, MPS751
−
−
0.1
0.1
CB
E
(V = 80 Vdc, I = 0)
CB
E
Emitter Cutoff Current
(V = 4.0 V, I = 0)
I
−
0.1
mAdc
EBO
EB
C
ON CHARACTERISTICS (Note 1)
DC Current Gain
h
FE
−
(I = 50 mA, V = 2.0 V)
75
75
75
40
−
−
−
−
C
CE
(I = 500 mA, V = 2.0 V)
C
CE
(I = 1.0 A, V = 2.0 V)
C
CE
(I = 2.0 A, V = 2.0 V)
C
CE
Collector−Emitter Saturation Voltage
(I = 2.0 A, I = 200 mA)
V
Vdc
CE(sat)
−
−
0.5
0.3
C
B
(I = 1.0 A, I = 100 mA)
C
B
Base−Emitter On Voltage (I = 1.0 A, V = 2.0 V)
V
−
−
1.0
1.2
Vdc
Vdc
C
CE
BE(on)
Base−Emitter Saturation Voltage (I = 1.0 A, I = 100 mA)
V
C
B
BE(sat)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
f
75
−
MHz
T
(I = 50 mAdc, V = 5.0 Vdc, f = 100 MHz)
C
CE
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
2. f is defined as the frequency at which |h | extrapolates to unity.
T
fe
http://onsemi.com
2
25°C
−ꢀ55°C
−
55°C
MPS650, MPS651, NPN MPS750, MPS751, PNP
NPN
PNP
300
270
250
225
T = 125°C
J
V
= −2.0 V
V
= 2.0 V
CE
CE
T = 125°C
J
240
210
200
175
150
125
100
75
180
150
120
90
25°C
60
50
30
25
0
0
10
20
50 100 200
500 1.0 A 2.0 A 4.0 A
−10 −ꢀ20
−ꢀ50 −100 −ꢀ200 −ꢀ500 −1.0 A −2.0 A−4.0 A
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 1. MPS650, MPS651
Typical DC Current Gain
Figure 2. MPS750, MPS751
Typical DC Current Gain
NPN
PNP
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−2.0
−1.8
−1.6
−1.4
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
0
V
@ I /I = 10
C B
BE(sat)
V
@ I /I = 10
C B
BE(sat)
V
@ V = 2.0 V
CE
BE(on)
V
@ V = 2.0 V
CE
BE(on)
V
@ I /I = 10
C B
CE(sat)
V
@ I /I = 10
C B
CE(sat)
50
100
200
500
1.0 A
2.0 A
4.0 A
−50
−100
−200
−500 −1.0 A −2.0 A −4.0 A
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. MPS650, MPS651
On Voltages
Figure 4. MPS750, MPS751
On Voltages
http://onsemi.com
3
MPS650, MPS651, NPN MPS750, MPS751, PNP
NPN
PNP
1.0
0.9
0.8
0.7
−1.0
−0.9
−0.8
−0.7
T = 25°C
J
T = 25°C
J
0.6
0.5
0.4
0.3
0.2
0.1
0
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
0
I = 10 mA I = 100 mA I = 500 mA
C
I = 2.0 A
C
I = −500 mA
C
I = −2.0 A
C
C
C
I = −10 mA
C
I = −100 mA
C
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100 200 500
−0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100−200 −500
I , BASE CURRENT (mA)
B
I , BASE CURRENT (mA)
B
Figure 5. MPS650, MPS651
Collector Saturation Region
Figure 6. MPS750, MPS751
Collector Saturation Region
NPN
PNP
10
−10
4.0
2.0
1.0
−4.0
−2.0
−1.0
100 ms
100 ms
1.0 ms
MPS65
1.0 ms
MPS75
0
MPS65
0.5
−0.5
0
MPS75
1
1
0.2
0.1
−0.2
−0.1
T = 25°C
A
T = 25°C
A
T = 25°C
C
T = 25°C
C
0.05
−0.05
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.02
0.01
−0.02
−0.01
1.0
2.0
5.0 10 20
50
100
−1.0
−2.0
−5.0 −10 −20
−50
−100
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
V , COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 7. MPS650, MPS651 SOA,
Safe Operating Area
Figure 8. MPS750, MPS751 SOA,
Safe Operating Area
http://onsemi.com
4
MPS650, MPS651, NPN MPS750, MPS751, PNP
ORDERING INFORMATION
†
Device
MPS650
Package
Shipping
TO−92
5000 Units / Bulk
5000 Units / Bulk
MPS650G
TO−92
(Pb−Free)
MPS650RLRA
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
MPS650RLRAG
TO−92
(Pb−Free)
MPS650ZL1
TO−92
2000 / Tape & Ammunition
2000 / Tape & Ammunition
MPS650ZL1G
TO−92
(Pb−Free)
MPS651
TO−92
5000 Units / Bulk
5000 Units / Bulk
MPS651G
TO−92
(Pb−Free)
MPS651RLRA
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
MPS651RLRAG
TO−92
(Pb−Free)
MPS651RLRBG
TO−92
(Pb−Free)
2000 / Tape & Reel
MPS651RLRM
TO−92
2000 / Tape & Ammunition
2000 / Tape & Ammunition
MPS651RLRMG
TO−92
(Pb−Free)
MPS750
TO−92
5000 Units / Bulk
5000 Units / Bulk
MPS750G
TO−92
(Pb−Free)
MPS750RLRA
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
MPS750RLRAG
TO−92
(Pb−Free)
MPS750RLRP
TO−92
2000 / Tape & Ammunition
2000 / Tape & Ammunition
MPS750RLRPG
TO−92
(Pb−Free)
MPS751
TO−92
5000 Units / Bulk
5000 Units / Bulk
MPS751G
TO−92
(Pb−Free)
MPS751RLRA
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
MPS751RLRAG
TO−92
(Pb−Free)
MPS751RLRP
TO−92
2000 / Tape & Ammunition
2000 / Tape & Ammunition
MPS751RLRPG
TO−92
(Pb−Free)
MPS751ZL1
TO−92
2000 / Tape & Ammunition
2000 / Tape & Ammunition
MPS751ZL1G
TO−92
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
MPS650, MPS651, NPN MPS750, MPS751, PNP
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
SEATING
PLANE
K
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.205
0.210
0.165
0.021
0.055
0.105
0.020
D
X X
G
K
L
−−− 12.70
J
H
V
−−−
0.105
6.35
2.04
−−−
−−−
N
P
R
V
2.66
2.54
−−−
C
−−− 0.100
0.115
0.135
−−−
−−−
2.93
3.43
SECTION X−X
−−−
1
N
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MPS650/D
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00225/img/page/MPS751-D26Z_1318426_files/MPS751-D26Z_1318426_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00225/img/page/MPS751-D26Z_1318426_files/MPS751-D26Z_1318426_2.jpg)
MPS751_D26Z
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
ONSEMI
![](http://pdffile.icpdf.com/pdf2/p00247/img/page/MPS9484_1497469_files/MPS9484_1497469_1.jpg)
MPS8000
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MICRO-ELECTRO
©2020 ICPDF网 联系我们和版权申明