MPSA13RLRA [ONSEMI]
Darlington Transistors NPN Silicon; 达林顿晶体管NPN硅
| 型号： | MPSA13RLRA |
| 厂家： | 
ONSEMI |
| 描述： | Darlington Transistors NPN Silicon |
| 文件： | 总6页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MPSA13, MPSA14
MPSA14 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
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• Pb−Free Packages are Available*
COLLECTOR 3
MAXIMUM RATINGS
BASE
2
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
30
Unit
Vdc
V
CES
CBO
EBO
V
V
30
Vdc
EMITTER 1
10
Vdc
Collector Current − Continuous
Total Device Dissipation
I
500
mAdc
C
P
P
D
D
MARKING DIAGRAM
@ T = 25°C
625
5.0
mW
mW/°C
A
Derate above 25°C
Total Device Dissipation
@ T = 25°C
Derate above 25°C
1.5
12
W
mW/°C
MPS
A1x
C
AYWWG
TO−92
Operating and Storage Junction
Temperature Range
T , T
−55 to
+150
°C
J
stg
G
(TO−226AA)
CASE 29−11
STYLE 1
1
2
THERMAL CHARACTERISTICS
Characteristic
3
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
R
200
°C/mW
q
JA
x
A
Y
= 3 or 4
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Thermal Resistance,
Junction−to−Case
R
q
83.3
°C/mW
JC
WW
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
June, 2005 − Rev. 3
MPSA13/D
MPSA13, MPSA14
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
V
30
−
−
Vdc
nAdc
nAdc
(BR)CES
(I = 100 mAdc, I = 0)
C
B
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
100
100
CBO
CB
E
Emitter Cutoff Current
(V = 10 Vdc, I = 0)
I
−
EBO
EB
C
ON CHARACTERISTICS (Note 1)
DC Current Gain
h
FE
−
(I = 10 mAdc, V = 5.0 Vdc)
MPSA13
MPSA14
MPSA13
MPSA14
5,000
10,000
10,000
20,000
−
−
−
−
C
CE
(I = 100 mAdc, V = 5.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 100 mAdc, I = 0.1 mAdc)
V
−
1.5
Vdc
Vdc
CE(sat)
C
B
Base−Emitter On Voltage
(I = 100 mAdc, V = 5.0 Vdc)
V
BE(on)
−
2.0
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
f
125
−
MHz
T
(I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz)
C
CE
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
2. f = |h | S f
.
test
T
fe
ORDERING INFORMATION
†
Device
Package
Shipping
MPSA13
TO−92
5000 Units / Box
5000 Units / Box
MPSA13G
TO−92
(Pb−Free)
MPSA13RLRA
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
MPSA13RLRAG
TO−92
(Pb−Free)
MPSA13RLRM
TO−92
2000 / Ammo Pack
2000 / Ammo Pack
MPSA13RLRMG
TO−92
(Pb−Free)
MPSA13RLRP
TO−92
2000 / Ammo Pack
2000 / Ammo Pack
MPSA13RLRPG
TO−92
(Pb−Free)
MPSA13ZL1
TO−92
2000 / Ammo Pack
2000 / Ammo Pack
MPSA13ZL1G
TO−92
(Pb−Free)
MPSA14
TO−92
5000 Units / Box
5000 Units / Box
MPSA14G
TO−92
(Pb−Free)
MPSA14RLRA
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
MPSA14RLRAG
TO−92
(Pb−Free)
MPSA14RLRP
TO−92
2000 / Ammo Pack
2000 / Ammo Pack
MPSA14RLRPG
TO−92
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MPSA13, MPSA14
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500
2.0
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
R ≈ 0
S
1.0
0.7
0.5
200
100
50
I
C
= 1.0 mA
0.3
0.2
10 mA
100 mA
100 mA
10 mA
0.1
0.07
0.05
20
I
C
= 1.0 mA
10
0.03
0.02
5.0
10 20
50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
f, FREQUENCY (Hz)
10 20
50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
f, FREQUENCY (Hz)
Figure 2. Noise Voltage
Figure 3. Noise Current
200
14
12
BANDWIDTH = 10 Hz TO 15.7 kHz
BANDWIDTH = 10 Hz TO 15.7 kHz
= 10 mA
100
70
10
8.0
6.0
4.0
2.0
0
I
C
10 mA
50
100 mA
100 mA
30
20
I
= 1.0 mA
C
1.0 mA
10
1.0 2.0
5.0
10
20
50 100 200
500 1000
1.0 2.0
5.0
10
20
50 100 200
500 1000
R , SOURCE RESISTANCE (kW)
S
R , SOURCE RESISTANCE (kW)
S
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
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3
MPSA13, MPSA14
SMALL−SIGNAL CHARACTERISTICS
20
10
4.0
V
= 5.0 V
CE
f = 100 MHz
T = 25°C
J
T = 25°C
J
2.0
7.0
5.0
C
ibo
1.0
0.8
C
obo
0.6
0.4
3.0
2.0
0.2
0.04
0.1 0.2
0.4
1.0 2.0 4.0
10 20
40
0.5 1.0
2.0
0.5 10 20
50
100 200
500
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 6. Capacitance
Figure 7. High Frequency Current Gain
200ꢀk
3.0
2.5
2.0
1.5
1.0
0.5
T = 125°C
J
T = 25°C
J
100ꢀk
70ꢀk
50ꢀk
I
C
=
50 mA
250 mA 500 mA
10 mA
25°C
30ꢀk
20ꢀk
10ꢀk
7.0ꢀk
5.0ꢀk
−ꢁ55°C
V
= 5.0 V
CE
3.0ꢀk
2.0ꢀk
500
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
5.0 7.0 10
20 30
50 70 100
200 300
I , COLLECTOR CURRENT (mA)
C
I , BASE CURRENT (mA)
B
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
1.6
1.4
−ꢁ1.0
−ꢁ2.0
−ꢁ3.0
−ꢁ4.0
−ꢁ5.0
−ꢁ6.0
*APPLIES FOR I /I ≤ h /3.0
C B
FE
25°C TO 125°C
T = 25°C
J
*R
FOR V
CE(sat)
q
VC
V
@ I /I = 1000
−ꢁ55°C TO 25°C
25°C TO 125°C
BE(sat)
C B
1.2
1.0
0.8
0.6
V
@ V = 5.0 V
CE
BE(on)
q
FOR V
BE
VB
−ꢁ55°C TO 25°C
V
@ I /I = 1000
C B
CE(sat)
5.0 7.0
10
20 30
50 70 100 200 300
500
5.0 7.0 10
20 30
50 70 100
200 300 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
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4
MPSA13, MPSA14
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
0.1
0.1
0.07
SINGLE PULSE
0.05
0.03
0.02
Z
Z
= r(t) • R ꢂT
− T = P
Z
q
q
q
q
JC(t)
JC
J(pk)
C
(pk) JC(t)
= r(t) • R ꢂT
− T = P
Z
q
q
JA
JA(t)
J(pk)
A
(pk) JA(t)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0ꢀk
2.0ꢀk
5.0ꢀk 10ꢀk
t, TIME (ms)
Figure 12. Thermal Response
1.0ꢀk
700
FIGURE A
1.0 ms
500
t
P
T
= 25°C
300
200
C
100 ms
T
A
= 25°C
P
P
P
P
1.0 s
100
70
50
t
1
30
20
CURRENT LIMIT
THERMAL LIMIT
1/f
SECOND BREAKDOWN LIMIT
t
1
DUTYꢀCYCLE + t ꢀf +
10
1
t
P
40
0.4 0.6
1.0
2.0 4.0 6.0 10
20
PEAK PULSE POWER = P
P
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 13. Active Region Safe Operating Area
Design Note: Use of Transient Thermal Resistance Data
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5
MPSA13, MPSA14
PACKAGE DIMENSIONS
TO−92
TO−226AA
CASE 29−11
ISSUE AL
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.205
0.210
0.165
0.021
0.055
0.105
0.020
−−− 12.70
−−−
0.105
D
X X
G
J
H
V
K
L
6.35
2.04
−−−
2.93
3.43
−−−
C
N
P
R
V
2.66
2.54
−−−
−−− 0.100
SECTION X−X
0.115
0.135
−−−
−−−
1
N
−−−
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MPSA13/D
相关型号：
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TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
TOSHIBA
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