MPSA92RLRAG [ONSEMI]
High Voltage Transistors; 高电压晶体管
| 型号： | MPSA92RLRAG |
| 厂家： | 
ONSEMI |
| 描述： | High Voltage Transistors |
| 文件： | 总5页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MPSA92, MPSA93
High Voltage Transistors
PNP Silicon
Features
http://onsemi.com
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
TO−92
(TO−226AA)
CASE 29−11
Collector−Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
−200
−300
MPSA93
MPSA92
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
1
2
3
Collector−Base Voltage
Emitter−Base Voltage
Vdc
STRAIGHT LEAD
BULK PACK
−200
−300
MPSA93
MPSA92
−5.0
Vdc
Collector Current − Continuous
I
−500
mAdc
MARKING
DIAGRAM
C
COLLECTOR
3
Total Device Dissipation
P
P
D
D
625
5.0
mW
mW/°C
@ T = 25°C
A
Derate above 25°C
2
BASE
MPS
A9x
Total Device Dissipation
AYWWG
1.5
12
W
mW/°C
@ T = 25°C
C
G
Derate above 25°C
1
EMITTER
Operating and Storage Junction
Temperature Range
T , T
−55 to
+150
°C
J
stg
x
A
Y
= 2 or 3
= Assembly Location
= Year
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
WW
= Work Week
= Pb−Free Package
Thermal Resistance,
Junction−to−Ambient
R
200
°C/W
q
JA
G
(Note: Microdot may be in either location)
Thermal Resistance,
R
q
83.3
°C/W
JC
Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
July, 2010 − Rev. 6
MPSA92/D
MPSA92, MPSA93
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 1)
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
−300
−200
−
−
(I = −1.0 mAdc, I = 0)
MPSA92
MPSA93
C
B
Collector−Base Breakdown Voltage
(I = −100 mAdc, I = 0)
V
V
Vdc
−300
−200
−
−
MPSA92
MPSA93
C
E
Emitter−Base Breakdown Voltage
(I = −100 mAdc, I = 0)
−5.0
−
Vdc
E
C
Collector Cutoff Current
(V = −200 Vdc, I = 0)
I
mAdc
CBO
−
−
−0.25
−0.25
MPSA92
MPSA93
CB
E
(V = −160 Vdc, I = 0)
CB
E
Emitter Cutoff Current
(V = −3.0 Vdc, I = 0)
I
−
−0.1
mAdc
EBO
EB
C
ON CHARACTERISTICS (Note 1)
DC Current Gain
h
FE
−
25
40
−
−
(I = −1.0 mAdc, V = −10 Vdc)
All Types
All Types
C
CE
(I = −10 mAdc, V = −10 Vdc)
C
CE
25
25
−
−
(I = −30 mAdc, V = −10 Vdc)
MPSA92
MPSA93
C
CE
Collector−Emitter Saturation Voltage
(I = −20 mAdc, I = −2.0 mAdc)
V
Vdc
Vdc
CE(sat)
BE(sat)
−
−
−0.5
−0.4
MPSA92
MPSA93
C
B
Base−Emitter Saturation Voltage
(I = −20 mAdc, I = −2.0 mAdc)
V
−
−0.9
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
50
−
MHz
pF
T
(I = −10 mAdc, V = −20 Vdc, f = 100 MHz)
C
CE
Collector−Base Capacitance
(V = −20 Vdc, I = 0, f = 1.0 MHz)
C
cb
−
−
6.0
8.0
MPSA92
MPSA93
CB
E
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
http://onsemi.com
2
MPSA92, MPSA93
ORDERING INFORMATION
†
Device
Package
Shipping
MPSA92G
TO−92
(Pb−Free)
5000 Units / Box
MPSA92RL1G
TO−92
(Pb−Free)
2000 / Tape & Reel
MPSA92RLRA
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
MPSA92RLRAG
TO−92
(Pb−Free)
MPSA92RLRMG
MPSA92RLRPG
MPSA92ZL1G
MPSA93G
TO−92
2000 / Ammo Pack
2000 / Ammo Pack
2000 / Ammo Pack
5000 Units / Box
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
MPSA93RLRMG
TO−92
(Pb−Free)
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
300
V
= 10 Vdc
CE
T = +125°C
J
250
200
150
25°C
-55°C
100
50
0
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
http://onsemi.com
3
MPSA92, MPSA93
100
10
150
130
C
@ 1MHz
ib
110
90
C
cb
@ 1MHz
70
50
30
1.0
0.1
T = 25°C
J
V
= 20 Vdc
F = 20 MHz
CE
10
0.1
1.0
10
100
1000
11
13
15
17
19
21
1
3
5
7
9
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 2. Capacitance
Figure 3. Current−Gain − Bandwidth
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
V
V
V
@ 25°C, I /I = 10
C B
CE(sat)
CE(sat)
CE(sat)
BE(sat)
@ 125°C, I /I = 10
C
B
@ −55°C, I /I = 10
C
B
@ 25°C, I /I = 10
C
B
V
V
@ 125°C, I /I = 10
C B
BE(sat)
BE(sat)
@ −55°C, I /I = 10
C
B
V
V
V
@ 25°C, V = 10 V
CE
BE(on)
BE(on)
BE(on)
@ 125°C, V = 10 V
CE
@ −55°C, V = 10 V
CE
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 4. ”ON” Voltages
1
10 ms
0.1
1.0 s
0.01
0.001
1
10
100
1000
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 5. Safe Operating Area
http://onsemi.com
4
MPSA92, MPSA93
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 029−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
STRAIGHT LEAD
BULK PACK
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
---
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.021
0.055
0.105
0.020
---
D
X X
G
J
H
V
K
L
---
---
N
P
R
V
0.105
0.100
---
2.66
2.54
---
C
SECTION X−X
0.115
0.135
2.93
3.43
1
N
---
---
STYLE 14:
PIN 1. EMITTER
N
2. COLLECTOR
3. BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
A
BENT LEAD
TAPE & REEL
AMMO PACK
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
P
T
MILLIMETERS
SEATING
PLANE
DIM MIN
MAX
5.20
5.33
4.19
0.54
2.80
0.50
---
K
A
B
C
D
G
J
4.45
4.32
3.18
0.40
2.40
0.39
12.70
2.04
1.50
2.93
3.43
D
X X
G
K
N
P
R
V
J
2.66
4.00
---
V
C
---
SECTION X−X
1
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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For additional information, please contact your local
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MPSA92/D
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