MPSW63 [ONSEMI]
One Watt Darlington Transistors(PNP Silicon); 一瓦达林顿晶体管（ PNP硅）
| 型号： | MPSW63 |
| 厂家： | 
ONSEMI |
| 描述： | One Watt Darlington Transistors(PNP Silicon) |
| 文件： | 总4页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MPSW63/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR 3
*Motorola Preferred Device
BASE
2
EMITTER 1
MAXIMUM RATINGS
1
2
3
MPSW63
MPSW64
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
V
CES
–30
–30
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
V
Vdc
CBO
EBO
V
–10
Vdc
Collector Current — Continuous
I
C
–500
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.0
8.0
Watt
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
2.5
20
Watts
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
125
50
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage
V
–30
—
—
Vdc
nAdc
nAdc
(BR)CES
(I = –100 µAdc, V
C BE
= 0)
Collector Cutoff Current
(V = –30 Vdc, I = 0)
I
–100
–100
CBO
CB
Emitter Cutoff Current
(V = –10 Vdc, I = 0)
E
I
—
EBO
EB
C
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Max
Unit
(1)
ON CHARACTERISTICS
DC Current Gain
(I = –10 mAdc, V
C CE
h
FE
—
= –5.0 Vdc)
MPSW63
MPSW64
5,000
10,000
—
—
(I = –100 mAdc, V
C CE
= –5.0 Vdc)
MPSW63
MPSW64
10,000
20,000
—
—
Collector–Emitter Saturation Voltage
(I = –100 mAdc, I = –0.1 mAdc)
V
—
–1.5
Vdc
Vdc
CE(sat)
C
B
Base–Emitter On Voltage
(I = –100 mAdc, V
V
BE(on)
—
–2.0
= –5.0 Vdc)
CE
C
SMALL–SIGNAL CHARACTERISTICS
(2)
Current–Gain — Bandwidth Product
f
T
125
—
MHz
(I = –10 mAdc, V
CE
= –5.0 Vdc, f = 100 MHz)
C
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
2. f = |h | • f
.
T
fe test
TYPICAL ELECTRICAL CHARACTERISTICS
200
T
= 125°C
J
100
70
50
–10 V
25°C
30
20
V
= –2.0 V
CE
–5.0 V
10
7.0
5.0
–55°C
3.0
2.0
–0.3
–300
–0.5 –0.7
–1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50
–70
–100
–200
I
, COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
–2.0
–2.0
T
= 25°C
T
= 25°C
J
J
–1.8
–1.6
–1.4
–1.2
–1.0
–1.6
–1.2
V
@ I /I = 100
C B
BE(sat)
–50 mA –100 mA –175 mA
–300 mA
V
@ V
CE
= –5.0 V
BE(on)
V
@ I /I = 1000
C B
CE(sat)
–0.8
I
/I = 100
C B
–0.4
0
–0.8
–0.6
I
= –10 mA
C
–0.1 –0.3 –1.0 –3.0 –10 –30 –100 –300 –1 k –3 k –10 k
–0.3 –0.5 –1.0
–3.0 –5.0 –10
–30 –50 –100
–300
I
, COLLECTOR CURRENT (mA)
I , BASE CURRENT ( A)
B
C
Figure 2. “ON” Voltage
Figure 3. Collector Saturation Region
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
+5.0
+4.0
600
*APPLIES FOR I /I
C B
≤
h
/100
FE
T
= 25°C
J
400
300
+3.0
+2.0
+1.0
0
V
= –20 V
CE
+25°C TO +125°C
200
–50°C TO +25°C
100
60
–1.0
–2.0
*R
FOR V
CE(sat)
VC
–10 V
–5.0 V
–3.0
–4.0
–5.0
–50
°
C TO +25
°
C
40
30
R
FOR V
BE
VB
+25
–50 –100
, COLLECTOR CURRENT (mA)
°C TO +125°C
20
–0.3 –0.5 –1.0 –2.0
–5.0 –10
–20
–50 –100
–300
–0.3 –0.5 –1.0 –2.0
–5.0 –10 –20
–300
I
I
C
, COLLECTOR CURRENT (mA)
C
Figure 4. Temperature Coefficients
Figure 5. Current–Gain — Bandwidth Product
–2 k
–1 k
20
15
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
C
obo
100
s
C
ibo
10
1.0 mS
7.0
–500
1.0 s
T
= 25°C
5.0
J
f = 1.0 MHz
T
= 25°C
T
= 25°C
C
A
–200
–100
3.0
2.0
DUTY CYCLE
≤ 10%
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0
–10 –20 –30
–1.5 –2.0
–5.0
–10
–20
–30
V
, REVERSE VOLTAGE (VOLTS)
V , COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
R
Figure 6. Capacitance
Figure 7. Active Region, Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
K
R
SEATING
PLANE
P
L
F
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.310
0.165
0.022
0.019
0.055
0.105
0.024
–––
MIN
4.44
7.37
3.18
0.46
0.41
1.15
2.42
0.46
12.70
6.35
2.04
–––
MAX
5.21
7.87
4.19
0.56
0.48
1.39
2.66
0.61
–––
0.175
0.290
0.125
0.018
0.016
0.045
0.095
0.018
0.500
0.250
0.080
–––
X X
D
G
H
V
J
–––
–––
SECTION X–X
0.105
0.100
–––
2.66
2.54
–––
C
1
2
3
N
R
V
0.135
0.135
3.43
3.43
N
–––
–––
STYLE 1:
PIN 1. EMITTER
CASE 029–05
2. BASE
3. COLLECTOR
(TO–226AE)
ISSUE AD
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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MPSW63/D
◊
相关型号：
MPSW63RLRE
TRANSISTOR 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN, BIP General Purpose Small Signal
ONSEMI
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